Novel three-junction thin-film solar cell and production method thereof

A solar cell, three-junction technology, applied in circuits, photovoltaic power generation, electrical components, etc., to achieve the effect of improving photoelectric conversion rate and low manufacturing cost

Inactive Publication Date: 2013-01-02
四川汉能光伏有限公司
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Problems solved by technology

The thin-film solar cell of this patent application adopts the structure of a-Si/PZT/ITO, which has high short-circuit current and photoelectric conversion efficiency, but it

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  • Novel three-junction thin-film solar cell and production method thereof

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[0016] The present invention will be further described in detail below in conjunction with the accompanying drawings:

[0017] Such as figure 1 As shown, the novel three-junction thin-film solar cell of the present invention includes a glass substrate, a molybdenum layer of a back electrode, a multi-junction battery cell, a zinc oxide window layer, and a magnesium fluoride anti-reflection layer arranged from bottom to top. The aluminum gate electrode 10 is arranged on the anti-reflection layer; the multi-junction battery cell includes three junctions, from bottom to top, there are the selenide-indium-copper junction, the amorphous silicon germanium junction and the amorphous silicon junction. The selenide-indium copper junction is P1 and N1, The amorphous silicon germanium junctions are P2, I2, and N2, and the amorphous silicon junctions are P3, I3, and N3. Specifically, the indium selenide copper junction includes a P-type copper-indium selenide layer and an N-type cadmium sulfi...

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Abstract

The invention discloses a novel three-junction thin-film solar cell, which comprises a glass substrate, a back electrode molybdenum layer, a multi-junction cell unit, a window layer and a reflection reducing layer arranged in sequence from bottom to top. The reflection reducing layer is provided with a gate electrode; the multi-junction cell unit consists of the following cell layers arranged in sequence from bottom to top: a P-type selenium-indium-copper layer, an N-type cadmium sulfide layer, a first P-type amorphous silicon layer, an intrinsic amorphous germanium-silicon layer, a first N-type amorphous silicon layer, a second P-type amorphous silicon layer, an intrinsic amorphous silicon layer and a second N-type amorphous silicon layer. The invention also discloses a production method of the novel three-junction thin-film solar cell, and the cell layers are manufactured respectively by magnetron sputtering, vacuum selenide annealing or vacuum evaporation. The characteristics of an a-Si/a-SiGe solar cell technology and a CuInSe2 thin-film solar cell are combined by the solar cell, the scope of the wavelength of solar light to be absorbed can be expanded to 500-1100nm, the rate of photoelectric conversion can be increased to 20 percent, and the manufacturing cost is low.

Description

technical field [0001] The invention relates to a solar cell and a production method thereof, in particular to a novel triple-junction thin-film solar cell and a production method thereof. Background technique [0002] Silicon (chemical symbol: Si)-based thin-film solar cells have the highest degree of industrialization among all thin-film solar cells due to their high solar absorption coefficient, small temperature coefficient of cell efficiency, low production cost, and suitable for large-scale large-scale production. , The actual production scale of the largest thin-film solar cells. The development of silicon-based thin-film solar cells is from single-junction amorphous silicon (ie a-Si) to double-junction amorphous silicon-amorphous silicon germanium (ie a-Si / a-SiGe). Due to the light-induced attenuation effect of amorphous silicon, its photoelectric conversion rate is generally only 8%. The optical bandgap of amorphous silicon-amorphous germanium silicon is between 1...

Claims

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Application Information

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IPC IPC(8): H01L31/078H01L31/20
CPCY02E10/50Y02P70/50
Inventor 董德庆庄春泉林进达王建强汪涛
Owner 四川汉能光伏有限公司
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