A kind of ZNO photoanode containing selenium and its preparation method and application

A photoanode and photoelectrochemical technology is applied in the field of selenium-containing ZnO photoanode and its preparation. Simple preparation steps, easy to deposit uniformly in large area

Active Publication Date: 2017-11-17
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although these methods have improved the PEC performance of ZnO photoanodes, the preparation process of these methods is complicated, the repeatability and universality are poor, and it is not easy to deposit large areas.

Method used

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  • A kind of ZNO photoanode containing selenium and its preparation method and application
  • A kind of ZNO photoanode containing selenium and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A selenium-containing ZnO photoanode is composed of a textured FTO substrate and a ZnO:B thin film, a ZnO thin film and a ZnO:Se thin film deposited sequentially on the textured FTO substrate surface, the thickness of the FTO substrate is 600nm, and the ZnO: Thicknesses of B thin film, ZnO thin film and ZnO:Se thin film are 2-3 μm, 1-2 μm and 1-2 μm, respectively. Its preparation method, the steps are as follows:

[0021] 1) Place the suede FTO substrate in an ethanol solution with a concentration of 99.7wt%, ultrasonically clean it for 30 min, and then use high-purity N 2 Blow dry, and use high-temperature adhesive tape to reserve an electron transport electrode that does not need to deposit ZnO on the FTO substrate;

[0022] 2) A single-chamber MOCVD deposition system is used to deposit ZnO film on the surface of the textured FTO substrate, in which the zinc source liquid is diethyl zinc (DEZn), the oxygen source liquid is water, and the dopant source gas is B 2 h ...

Embodiment 2

[0028] A selenium-containing ZnO photoanode is the same as in Example 1, and its preparation method is basically the same as in Example 1, except that: in step 2), the deposition temperature is 155° C., the diethyl zinc flow rate is 170 sccm, and the water vapor The flow rate is 100sccm, first, B 2 h 6 The flow rate is 6sccm, the deposition time is 45min, then, B 2 h 6 The flow rate is 0sccm, and the deposition time is 30min; the background vacuum in the thermal evaporation chamber in step 3) is 10 -3 Pa, the evaporation temperature is 450° C., and the selenization time is 35 min to prepare a ZnO:B-ZnO-ZnO:Se photoanode.

[0029] The linear sweep voltammetry curve of the prepared ZnO:B-ZnO-ZnO:Se photoanode is similar to that of Example 1.

Embodiment 3

[0031] A selenium-containing ZnO photoanode is the same as in Example 1, and its preparation method is basically the same as in Example 1, except that in step 2), the deposition temperature is 155° C., the diethylzinc flow rate is 180 sccm, and the water vapor The flow rate is 110sccm, first, B 2 h 6 The flow rate is 7sccm, the deposition time is 50min, then, B2 h 6 The flow rate is 0sccm, and the deposition time is 25min; the background vacuum in the thermal evaporation chamber in step 3) is 10 -3 Pa, the evaporation temperature is 450° C., and the selenization time is 45 min to prepare a ZnO:B-ZnO-ZnO:Se photoanode.

[0032] The linear sweep voltammetry curve of the prepared ZnO:B-ZnO-ZnO:Se photoanode is similar to that of Example 1.

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Abstract

A selenium-containing ZnO photoanode, including an FTO substrate and a ZnO:B film, a ZnO film and a ZnSe film deposited sequentially on the surface of the FTO substrate; a photoelectrochemical cell is assembled with a selenium-containing ZnO photoanode for photoelectrochemical electrolysis of water , to improve the photoelectrochemical performance of ZnO photoanode. The present invention utilizes thermal evaporation equipment to evaporate selenium atoms on the ZnO:B-ZnO photoanode on the suede surface, reduces the recombination speed of photogenerated carriers in the photoanode, and provides PEC performance; it is prepared by using MOCVD deposition system and thermal evaporation deposition system The selenium-containing ZnO photoanode has simple preparation steps, easy operation, strong repeatability and easy large-area deposition.

Description

technical field [0001] The invention relates to a method for improving the photoelectrochemical (photoelectrochemical, PEC) performance of a ZnO photoanode, in particular to a selenium-containing ZnO photoanode and its preparation method and application. Background technique [0002] Photoelectrochemical water splitting is a promising and environmentally friendly method to convert solar energy into hydrogen energy. As the core device of the PEC system, the photoanode mainly exists as a light-absorbing layer, which mainly uses photogenerated holes to oxidize water to generate oxygen. The performance of PEC is mainly determined by the light absorption and carrier transport capabilities. The currently studied photoanode materials are mainly TiO 2 , ZnO, Fe 2 o 3 , WO 3 and BiVO 4 and other metal oxides. With the advantages of favorable bandgap position, high photochemical activity, large storage capacity, low cost, and nontoxicity, ZnO has been widely used as photoanode a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B11/04C25B11/02C23C16/40C23C14/24C23C14/06
Inventor 张晓丹王宁葛阳许盛之魏长春赵颖
Owner NANKAI UNIV
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