Oxide film thermocouple and preparation method thereof

An oxide film, thermocouple technology, applied in the manufacture/processing of thermoelectric devices, thermometers with directly sensitive electrical/magnetic components, measurement of heat, etc., to reduce thermal volatilization, improve thermal volatility, and improve the use of performance effect

Inactive Publication Date: 2016-02-03
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims at the defects of the existing material system and higher application requirements, and provides an oxide thin-film thermocouple and its preparation method, mainly researching and designing thin-film thermocouples suitable for high-temperature ceramic substrates and its manufacturing method

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  • Oxide film thermocouple and preparation method thereof
  • Oxide film thermocouple and preparation method thereof
  • Oxide film thermocouple and preparation method thereof

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preparation example Construction

[0032] The invention discloses a method for preparing an oxide thin-film thermocouple, which uses a magnetron sputtering process to deposit and prepare an oxide thin-film thermocouple that can be used for high-temperature measurement on a high-temperature ceramic substrate 1 . In addition, the oxide protective layer 3 is applied to improve the thermal volatility of the oxide film thermocouple and improve the performance of the thermocouple. The thin-film thermocouple is directly mounted on the surface of the ceramic substrate, can be used in an oxidizing atmosphere, and can work stably for a long time at a high temperature of 1000°C-1250°C. Including the following steps:

[0033] 1) Two different oxide films of indium oxide and tin-doped indium oxide (ITO) are used as the two working thermal electrodes of the thermocouple;

[0034] 2) Using a magnetron sputtering process, combined with a patterned template technology, depositing an oxide film thermal electrode on the high-tem...

Embodiment 1

[0041] The selected ITO oxide thermal electrode component is indium tin oxide material with a tin content of 10%, and the indium oxide thermal electrode component is a single oxide with a purity of 99%. A thin film thermode is deposited on the substrate. Among them, in the magnetron sputtering process, the working carrier gas used is oxygen / argon, wherein the content of oxygen is controlled at 40%, the sputtering power is determined to be 100w, and the sputtering time is 5 hours. In order to obtain good patterning, a U-shaped structure mask with a thermal electrode length of 12 cm and a width of 0.8 cm was selected for vacuum sputtering deposition of the film. Using mask technology, first deposit ITO film on the substrate, and then sputter deposit indium oxide film. After the deposition of both film materials is completed, the film sample is heat-treated in a muffle furnace at 900°C for 1 hour, and the heating rate is kept at 5. ℃ / min, finally prepared ITO-In with a U-shaped ...

Embodiment 2

[0045] The selected ITO oxide thermal electrode component is indium tin oxide material with a tin content of 5%, and the indium oxide thermal electrode component is a single oxide with a purity of 99%. A thin film thermode is deposited on the substrate. Among them, in the magnetron sputtering process, the working carrier gas used is oxygen / argon, the content of oxygen is controlled at 50%, the sputtering power is determined to be 120w, and the sputtering time is 7 hours. In order to obtain good patterning, a U-shaped structure mask with a thermal electrode length of 25 cm and a width of 1.0 cm was selected for vacuum sputtering deposition of the film. Using mask technology, first deposit a thin film of indium oxide on the substrate, and then sputter to deposit an ITO thin film. After the deposition of both thin film materials is completed, the thin film sample is heat-treated in a muffle furnace at 1000°C for 1.2 hours, and the heating rate is kept at 5. ℃ / min, and finally pr...

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Abstract

The invention relates to an oxide film thermocouple and a preparation method thereof. A magnetron sputtering technology is adopted, the oxide film thermocouple used for high temperature measurement is prepared on a high temperature ceramic substrate in a deposition manner; and an oxide protection layer is coated to improved the heat volatility of the oxide film thermocouple and improve the usage performance of the thermocouple. The film thermocouple is directly pasted to the surface of the ceramic substrate, can be used in a vacuum condition and an oxidation atmosphere and can work stably for a long time under a high temperature from 1000 DEG C to 1250 DEG C.

Description

【Technical field】 [0001] The invention relates to the field of sensor preparation technology and high-temperature temperature measurement technology, in particular to an oxide film type thermocouple and a preparation method thereof. 【Background technique】 [0002] In aero-engine design and verification experiments, in order to verify the combustion efficiency of the engine and the design of the cooling system, it is necessary to accurately test the temperature of the engine turbine blade surface, the inner wall of the combustion chamber and other parts. Compared with traditional linear and block thermocouples, high-temperature ceramic thin-film thermocouples have the characteristics of small heat capacity, small size, and fast response speed, and can capture instantaneous temperature changes. At the same time, thin-film thermocouples can be directly deposited on the surface of the measured object , does not damage the structure of the tested part, and has little impact on th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01K7/02H01L35/34
CPCG01K7/028
Inventor 任巍史鹏刘艳涛田边蒋庄德
Owner XI AN JIAOTONG UNIV
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