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Near-infrared visible-light OPV iodine-doped photovoltaic organic detector

A visible light and near-infrared technology, applied in the field of optoelectronics, can solve the problems of not many, very little photosensitive layer of infrared detectors, no photoactivity, etc., and achieve the effects of controllable performance, considerable market prospects, and outstanding novelty.

Active Publication Date: 2016-02-24
KUNMING INST OF PHYSICS
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Problems solved by technology

[0002] Research on organic infrared detectors has only been carried out in recent years. Since 1999, a new organic material, a metal-dithiolene complex, was synthesized by the Polytechnic University of Milan, Italy, and reported in 2004. After the photoelectric response performance of similar materials at 600-900 nanometers, more and more researches have been done on organic infrared materials, but general organic / polymer materials have no photoactivity in the infrared region of the wavelength range greater than 1 micron.
So far, many researches on organic semiconductor materials are still mainly focused on the research on luminescent materials and solar cells. There are very few researches on infrared semiconductor materials and devices. There are not many types of organic infrared semiconductor materials at present. They are used as infrared The photosensitive layer of the detector is even more tiny

Method used

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  • Near-infrared visible-light OPV iodine-doped photovoltaic organic detector

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Embodiment 1

[0023] Example 1, such as Figure 1-6 Shown:

[0024] An OPV iodine-doped photovoltaic organic detector for near-infrared and visible light, composed of various functional layers arranged on a substrate, including a substrate 1, a metal or transparent conductive electrode 3, a hole transport layer 4 and an organic photosensitive layer 2 etc., substrate 1, prepare metal or transparent conductive electrode 3 by magnetron sputtering or electron beam evaporation on the substrate, spin-coat hole transport layer 4 on the transparent conductive electrode, and then spin-coat organic material on the hole transport layer. The photosensitive layer 2, and finally the upper metal electrode 3 is prepared on the photosensitive layer by electron beam evaporation.

[0025] The material of the substrate 1 in the present invention is cheap glass.

[0026] Concrete preparation process is as follows:

[0027] (1) Deposit an ITO film of about 180nm by magnetron sputtering on a glass substrate; ...

Embodiment 2

[0038] A kind of near-infrared broad-spectrum detector, its preparation process is compared with embodiment 1, this method except the change of the doping mode of iodine, other do not change, such as doping mode is:

[0039] The incorporation of iodine in the OPV material does not use the photosensitive material directly mixed into the OPV, but after spin-coating to obtain a uniform undoped photosensitive layer, weigh 10 mg of iodine, and put the iodine of this mass into In a petri dish, heat it on a heating plate with a temperature of 150°C, place the undoped substrate with a photosensitive layer directly on the petri dish at a certain distance, the area of ​​the substrate is 2.5cm×2.5cm, Under the volatilization of iodine, it can be processed until the iodine vapor volatilizes completely. Afterwards, it was treated in a furnace at a temperature of 150° C. for 15 minutes, and then a metal Al electrode was prepared by an electron beam method, so that a near-infrared detector w...

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Abstract

The invention relates to the field of photoelectronic techniques, in particular to a photoconductive organic semiconductor detector. The invention discloses a near-infrared visible-light OPV iodine-doped photovoltaic organic detector, which comprises a substrate, wherein functional layers are arranged on the substrate. The organic detector comprises the substrate (1), a metal or transparent conductive pole (3), a hole transmission layer (4), an organic photosensitive layer (2) and the like, and is characterized in that the organic photosensitive layer (2) is made of an OPV material, after acceptor-doping of iodine and has photoelectric response to near-infrared light, of a solar cell. The organic photosensitive layer is a common OPV material of a typical solar cell, is subjected to effective acceptor-doping of iodine in order to achieve response to near-infrared bands. The near-infrared visible-light OPV iodine-doped photovoltaic organic detector has the advantages of being easy to achieve large area and large array, having controllable resistance of photosensitive layer material, being able to achieve flexible processing and the like, and has important application value in military, civil use and some specific fields.

Description

technical field [0001] The invention relates to the technical field of optoelectronics, in particular to a photoconductive organic semiconductor detector. Background technique [0002] Research on organic infrared detectors has only been carried out in recent years. Since 1999, a new organic material, a metal-dithiolene complex, was synthesized by the Polytechnic University of Milan, Italy, and reported in 2004. After the photoelectric response performance of similar materials at 600-900 nanometers, more and more researches have been done on organic infrared materials, but general organic / polymer materials have no photoactivity in the infrared region in the wavelength range greater than 1 micron. So far, many researches on organic semiconductor materials are still mainly focused on the research on luminescent materials and solar cells. There are very few researches on infrared semiconductor materials and devices. There are not many types of organic infrared semiconductor mat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46
CPCH10K85/141Y02E10/549
Inventor 唐利斌姬荣斌项金钟田品孔金丞袁俊太云见赵鹏
Owner KUNMING INST OF PHYSICS
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