39results about How to "Doping effective" patented technology

The invention relates to a preparation method of a single crystal lithium ion battery nickel cobalt lithium manganate cathode material. The method comprises the following steps of: (1) taking a small-grain crystal spherical NCM ternary precursor, a lithium salt and an A element-containing nano fluxing agent as raw materials, uniformly mixing the raw materials by adopting a dry-method high-speed mixing mode, and performing primary sintering under an oxygen-enriched atmosphere condition; (2) subjecting the sintered material to jaw breaking, roller pairing, crushing and sieving so as to obtain asingle-crystal once-sintered base material; and (3) mixing the primary sintering base material with a B element-containing nano coating agent, sintering again under an oxygen-enriched atmosphere condition, and then performing jaw breaking, roller pairing, crushing and sieving to obtain the large single crystal lithium nickel cobalt manganate cathode material. The cathode material prepared by the invention has the characteristics of the large particle size, the good dispersity, the moderate specific surface area, the high compaction density, the high voltage, the good high-temperature cycle performance and the like.

The invention discloses a preparation method of a lithium and nitrogen co-doped diamond film. The preparation method comprises the following steps: coating a layer of suspension liquid containing a lithium source on the surface of a substrate on which a diamond film is pre-deposited; after drying, putting into a reaction chamber of a heater chemical vapor deposition system, heating in a hydrogen atmosphere to melt powder containing the lithium source and allowing lithium to be dispersed in diamond; subsequently further depositing the lithium and nitrogen co-doped diamond film in a nitrogen-containing atmosphere by adopting a heater chemical vapor deposition method. The lithium and nitrogen co-doped diamond film has low surface work function, is liable to emit electrons under the effect of heat and the effect of an electric field, and can be applied to thermo-electron energy transforming components and field emission display components.

The invention relates to the field of photoelectronic techniques, in particular to a photoconductive organic semiconductor detector. The invention discloses a near-infrared visible-light OPV iodine-doped photovoltaic organic detector, which comprises a substrate, wherein functional layers are arranged on the substrate. The organic detector comprises the substrate (1), a metal or transparent conductive pole (3), a hole transmission layer (4), an organic photosensitive layer (2) and the like, and is characterized in that the organic photosensitive layer (2) is made of an OPV material, after acceptor-doping of iodine and has photoelectric response to near-infrared light, of a solar cell. The organic photosensitive layer is a common OPV material of a typical solar cell, is subjected to effective acceptor-doping of iodine in order to achieve response to near-infrared bands. The near-infrared visible-light OPV iodine-doped photovoltaic organic detector has the advantages of being easy to achieve large area and large array, having controllable resistance of photosensitive layer material, being able to achieve flexible processing and the like, and has important application value in military, civil use and some specific fields.

The invention relates to a vanadium-doped calcium zirconate inorganic pigment and a preparing method thereof. The preparing method comprises the steps of mixing calcium carbonate, zirconium oxide and vanadium pentoxide according to the molar ratio of 1: (1-x) : x to obtain a mixture, wherein 0<x<=0.4; conducting dry ball-milling on the mixture, conducting even mixing, conducting calcination at 1400-1700 DEG C, and conducting ball milling again to obtain powder after cooling, so that the vanadium-doped calcium zirconate inorganic pigment is obtained. The prepared vanadium-doped calcium zirconate inorganic pigment has high infrared reflection performance and can effectively reflect the energy of sunlight; meanwhile, through vanadium doping, the color generation performance of calcium zirconate can be improved, the pigment appears yellow, and the problem of poor contamination resistance is effectively solved. Production equipment mainly includes a ball mill and a firing electric furnace, equipment investment is low, the preparing process is simple, operation is easy, and therefore the preparing method is suitable for large-scale industrial production.

The invention discloses a lightly-doped region formation method and a semiconductor device fabrication method. The lightly-doped region formation method comprises the steps of sequentially laminating an insulation layer, a dielectric layer and a semiconductor layer on a surface of a substrate, wherein a channel is formed in the semiconductor layer; forming ion injection regions at two sides of the channel in the semiconductor layer; injecting impurity ions to the ion injection regions; and irradiating the semiconductor layer by using laser so that the impurity ions are diffused and lightly-doped regions are formed at two sides of the channel. Through the abovementioned mode, the problem that leakage current of an NMOS (N-channel Metal Oxide Semiconductor) structure is difficult to suppress and the activation temperature is relatively high can be solved.

The invention relates to a nitrogen-sulfur co-doped carbon quantum dot as well as a preparation method and an application thereof, and the quantum dot is synthesized by taking ammonium citrate and sodium thiosulfate as raw materials through a one-step hydrothermal method. The average size of the nitrogen-sulfur co-doped carbon quantum dot is about 3.3 nm, the nitrogen-sulfur co-doped carbon quantum dot has good water solubility and optical stability, the maximum excitation wavelength is 343 nm, and the maximum emission wavelength is 435 nm. The nitrogen-sulfur co-doped carbon quantum dot prepared by the invention has relatively high fluorescence quantum yield, can be used as a fluorescence probe for detecting silver ions, and has the advantages of good selectivity, high sensitivity, low detection limit, strong anti-interference capability and the like. The preparation method of the quantum dot is simple and is low in cost, can be put into industrial production, and has a wide application prospect in the aspect of biological and environmental sample detection.

The invention provides a bolometer and a manufacturing method thereof, particularly relates to a bolometer obtained by changing the structure of thermistors. The structure of the bolometer comprises a base, a support layer positioned above the base, a lower electrode manufactured on the support layer, thermistors manufactured on the lower electrode, an upper electrode covering the thermistors and an absorbing layer prepared on the upper electrode, wherein the base and the support layer are parallel to each other and are arranged at intervals, and the upper electrode, the lower electrode and the thermistors are electrically connected in series. The structural arrangement enabls the resistance value of the thermistors to be adjustable in a large range, optimizes the performances of devices and meets different application requirements, thereby greatly improving the flexibility of design.

The invention discloses a polycrystalline silicon ingot and a polycrystalline silicon rod prepared from silicon materials purified according to a physical method, and corresponding methods thereof. The silicon materials are prepared into the polycrystalline silicon ingot according to a directional solidification method; a first-type element and a second-type element are doped in the preparation process to control the resistivity of the polycrystalline silicon ingot within a preset range, wherein the first-type element controls the resistivity increase of the polycrystalline silicon ingot, andthe second-type element controls the resistivity reduction of the polycrystalline silicon ingot. According to the technical scheme, the polycrystalline silicon ingot is prepared by the directional solidification method to remove metal impurities, and accordingly, the metal impurities in the polycrystalline silicon ingot and the polycrystalline silicon rod can be removed effectively; through dopingof the first-type element and the second-type element, the doping balance in the polycrystalline silicon ingot and the polycrystalline silicon rod can be realized to control the resistivity within the preset range, so that the performance of silicon wafers prepared from the polycrystalline silicon ingot or the polycrystalline silicon rod is improved, and the cost of semiconductor structural devices is effectively reduced.

The invention relates to an Eu<3+> ion-activated fluorescent material. The material has a chemical formula of LaGd(1-x)EuxYTiO4Cl5, wherein 0.001 <= x <= 1.0, and red fluorescence can be emitted by the Eu<3+> ion-activated fluorescent material under excitation of ultraviolet light and/or near ultraviolet light. Red phosphor of a pure phase and with excellent luminescence performance can be obtained by adopting a high-temperature solid-phase method, and has strong excitation efficiency under excitation of ultraviolet and near-ultraviolet light, the excited wavelengths are very consistent with emission wavelength of a near-ultraviolet LED chip, and the emitted light has a sharp spectrum dominated by red light of 615 nm.

The invention discloses a P-type doping method for a semiconductor layer of an organic field effect transistor and the prepared organic field effect transistor, and the method comprises the steps: dissolving 2, 3, 5, 6-tetrafluoro-7, 7 ', 8, 8'-tetracyanodimethyl p-benzoquinone (F4-TCNQ) in an orthogonal solvent of the organic semiconductor layer to serve as a P-type doping agent; the method comprises the following steps of: preparing an organic semiconductor layer film, spin-coating the organic semiconductor layer film on the spin-coated organic semiconductor layer film in an air atmosphere, and activating doping through rapid thermal annealing, so that the problems caused by jump transmission and coulomb traps in charge transport are solved, the threshold voltage is reduced, and the switch ratio is increased. For the P-type field effect transistor, the P-type doping enhances the hole transport, effectively improves the saturation current, and inhibits the electron transport, so that the power consumption is reduced when the transistor is closed. The doping method is operated based on a solution method, is simple in process and low in preparation cost, can be suitable for large-scale production, and has a very good prospect in application of flexible and portable electronic equipment.