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N-type boron nitride film/p-type monocrystalline silicon heterogeneous pn junction prototype device and preparation method thereof

A technology of boron nitride and single crystal silicon, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of high-quality boron nitride thin film synthesis and effective doping limited, high-quality boron nitride thin film application Research on problems such as sluggishness and narrow boron nitride film growth window to overcome high intrinsic resistance, ease of industrialization, and improve growth quality and doping quality

Pending Publication Date: 2021-11-19
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing reports on the pn junction are mostly boron nitride bulk single crystals synthesized at high temperature and high pressure, which cannot be directly deposited on the substrate, which is not conducive to the application in large-scale and large-area integrated circuits.
In addition, reports on the synthesis and effective doping of high-quality BN thin films are extremely limited
The growth window of boron nitride thin films is very narrow, especially the growth repeatability of high-quality boron nitride thin films is very poor, the process parameters are completely different with different deposition methods, and the same is true for expensive and sophisticated equipment
At the same time, due to the band gap of boron nitride, it is difficult to obtain effective doping with high concentration and low compensation
Therefore, the research on the application of high-quality boron nitride thin films in related fields such as semiconductors has been sluggish.

Method used

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  • N-type boron nitride film/p-type monocrystalline silicon heterogeneous pn junction prototype device and preparation method thereof
  • N-type boron nitride film/p-type monocrystalline silicon heterogeneous pn junction prototype device and preparation method thereof
  • N-type boron nitride film/p-type monocrystalline silicon heterogeneous pn junction prototype device and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0031] After the p-type silicon (100) single wafer cut according to the required size is ultrasonically cleaned in acetone, ethanol, and deionized water in sequence, it is dried with nitrogen and placed on the sample holder, and then sent to the vacuum deposition chamber. The vacuum degree in the deposition chamber is Draw up to 3×10 -5 Pa, heat the substrate to 500°C; continue vacuuming until the back vacuum of the deposition chamber reaches 3×10 -5 Pa, the reactive working gas argon 50sccm is introduced until the working pressure is 2Pa; the distance between the substrate and the target is 8cm, and the negative bias voltage of the substrate is -150V, and the sputtering power of the target is set to 150W before starting, and after pre-sputtering for 2 minutes, Remove the baffle and perform thin film sputtering for 2 hours to obtain n-type boron nitride thin film / p-type single crystal silicon heterogeneous pn junction. Prepare silver electrodes on both sides of the n-type bor...

Embodiment 2

[0034] After the p-type silicon (100) single wafer cut according to the required size is ultrasonically cleaned in acetone, ethanol, and deionized water in sequence, it is dried with nitrogen and placed on the sample holder, and then sent to the vacuum deposition chamber. The vacuum degree in the deposition chamber is Draw up to 3×10 -5Pa, heat the substrate to 500°C; continue vacuuming until the back vacuum of the deposition chamber reaches 3×10 -5 At Pa, feed the reactive working gas Argon 50sccm and Nitrogen 20sccm until the working pressure is 2Pa; the distance between the substrate and the target is 8cm, add the substrate negative bias -150V, set the sputtering power of the target to 150W and start the sputtering, pre-sputtering After 2 minutes, the baffle was removed and film sputtering was performed for 2 hours to obtain n-type boron nitride film / p-type single crystal silicon heterogeneous pn junction. Silver electrodes are respectively prepared on both sides of the n-...

Embodiment 3

[0037] After the p-type silicon (100) single wafer cut according to the required size is ultrasonically cleaned in acetone, ethanol, and deionized water in sequence, it is dried with nitrogen and placed on the sample holder, and then sent to the vacuum deposition chamber. The vacuum degree in the deposition chamber is Draw up to 3×10 -5 Pa, heat the substrate to 500°C; continue vacuuming until the back vacuum of the deposition chamber reaches 3×10 -5 At Pa, feed the reactive working gas Argon 50sccm and Nitrogen 40sccm until the working pressure is 2Pa; the distance between the substrate and the target is 8cm, add the negative bias voltage of the substrate -150V, set the target sputtering power to 150W and start the sputtering, pre-sputtering After 2 minutes, the baffle was removed and film sputtering was performed for 2 hours to obtain n-type boron nitride film / p-type single crystal silicon heterogeneous pn junction. Silver electrodes are respectively prepared on both sides ...

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Abstract

The invention provides an n-type boron nitride film / p-type monocrystalline silicon heterogeneous pn junction prototype device and a preparation method thereof, and belongs to the field of semiconductor materials. The preparation method comprises the following steps: preparing a boron nitride film on a p-type (100) surface monocrystalline silicon substrate by adopting a magnetron sputtering method; carrying out in-situ carbon doping by using a co-sputtering means to obtain an n-type boron nitride film; and respectively manufacturing silver electrodes on one side of the n-type boron nitride film and one side of the p-type monocrystalline silicon to obtain the n-type boron nitride film / p-type monocrystalline silicon heterogeneous pn junction prototype device. According to the invention, the n-type conductive layer with excellent electrical properties is obtained by performing in-situ carbon doping on the boron nitride film, and the electrical properties of the n-type conductive layer are remarkably improved compared with those of non-doped and silicon-doped boron nitride films; and a pn junction prototype device with good rectification characteristics is obtained.

Description

[0001] This application was submitted to the State Intellectual Property Office of China on May 09, 2019, the application number is 201910382492.8, and the invention name is "n-type boron nitride thin film / p-type single crystal silicon heterogeneous pn junction device and preparation method" divisional application of the Chinese patent application. technical field [0002] The invention relates to the field of semiconductor materials, in particular to an n-type boron nitride film / p-type single crystal silicon heterogeneous pn junction type device and a preparation method. Background technique [0003] With the development of material science and semiconductor technology, the performance of silicon-based semiconductor devices has gradually reached the limit of silicon material theory, while the development of industry, technology and military has continuously put forward more stringent requirements for semiconductor devices, and the development of high-strength New materials ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/20H01L29/207H01L29/66H01L29/808H01L21/02C23C14/06C23C14/35
CPCH01L29/808H01L29/66893H01L29/66916H01L29/2003H01L29/207H01L21/0254H01L21/02631C23C14/35C23C14/0647
Inventor 殷红刘彩云李宇婧高伟
Owner JILIN UNIV
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