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Organic field effect transistor semiconductor layer P-type doping method and prepared organic field effect transistor

A technology of organic semiconductor layers and transistors, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., and can solve problems such as on-off ratio attenuation and performance degradation.

Pending Publication Date: 2022-06-24
NANJING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

High doping results in performance degradation, especially on-off ratio decay, compared to the parts per million (ppm) typically required for inorganics

Method used

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  • Organic field effect transistor semiconductor layer P-type doping method and prepared organic field effect transistor
  • Organic field effect transistor semiconductor layer P-type doping method and prepared organic field effect transistor
  • Organic field effect transistor semiconductor layer P-type doping method and prepared organic field effect transistor

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Embodiment 1

[0034] Example 1 Doping under the condition of water and oxygen atmosphere

[0035] The present embodiment relates to a process including P-type channel doping by a solution method in a water-oxygen atmosphere and a method for fabricating a polymer field effect transistor, which specifically includes the following specific steps:

[0036] 1) Substrate cleaning: a glass sheet is used as the substrate. Put the glass pieces into beakers of deionized water (DI) and ethanol respectively, use an ultrasonic cleaning machine to clean them for 5-10 minutes, repeat the operation 2 times, and then use high-purity nitrogen (purity 99.99%) to clean the glass pieces. The surface was blown dry, and the glass sheet was thoroughly dried by heating at 100 °C for 20 minutes on a heating table, and used as a substrate;

[0037] 2) Surface treatment: Clean the dried glass sheets with an ultraviolet ozone cleaning machine (U / V ozone) for 30 minutes to remove organic residues on the surface of the ...

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Abstract

The invention discloses a P-type doping method for a semiconductor layer of an organic field effect transistor and the prepared organic field effect transistor, and the method comprises the steps: dissolving 2, 3, 5, 6-tetrafluoro-7, 7 ', 8, 8'-tetracyanodimethyl p-benzoquinone (F4-TCNQ) in an orthogonal solvent of the organic semiconductor layer to serve as a P-type doping agent; the method comprises the following steps of: preparing an organic semiconductor layer film, spin-coating the organic semiconductor layer film on the spin-coated organic semiconductor layer film in an air atmosphere, and activating doping through rapid thermal annealing, so that the problems caused by jump transmission and coulomb traps in charge transport are solved, the threshold voltage is reduced, and the switch ratio is increased. For the P-type field effect transistor, the P-type doping enhances the hole transport, effectively improves the saturation current, and inhibits the electron transport, so that the power consumption is reduced when the transistor is closed. The doping method is operated based on a solution method, is simple in process and low in preparation cost, can be suitable for large-scale production, and has a very good prospect in application of flexible and portable electronic equipment.

Description

technical field [0001] The invention relates to a P-type doping method for a semiconductor layer of an organic field effect transistor, in particular to a method for channel doping a polymer transistor by a solution method in a water-oxygen atmosphere, and belongs to the field of organic transistor preparation. Background technique [0002] Invented in the 1980s, organic field-effect transistors (OFETs) have gained attention for enabling thin and flexible circuits over large areas at low processing temperatures. Today, OFETs are widely used to drive electronic ink displays, printed RFID tags, and flexible electronic devices. Organic semiconductor materials are divided into organic small molecule semiconductor materials and organic polymer semiconductor materials according to the repeatability of molecular structural units. Organic small molecule semiconductor materials are generally composed of relatively large π-π conjugated systems. Rubrene, pentacene, and hexacene are a...

Claims

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Application Information

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IPC IPC(8): H01L51/40H01L51/05
CPCH10K71/30H10K10/466
Inventor 徐勇张引全孙华斌陈子龙于志浩吴洁张晗
Owner NANJING UNIV OF POSTS & TELECOMM
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