A sn-ag-cu low-silver lead-free solder containing nd, re, in

A lead-free solder and solder technology, used in welding/cutting media/materials, welding media, metal processing equipment, etc. The effect of creep resistance, growth inhibition and improvement of mechanical properties of lead-free solder

Active Publication Date: 2017-12-05
ZHONGKAI UNIV OF AGRI & ENG
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the performance of the solder obtained through this improvement is still insufficient and cannot meet the actual needs.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A sn-ag-cu low-silver lead-free solder containing nd, re, in
  • A sn-ag-cu low-silver lead-free solder containing nd, re, in
  • A sn-ag-cu low-silver lead-free solder containing nd, re, in

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] A Sn-Ag-Cu low-silver lead-free solder containing Nd, Re, and In, including the following components: Ag content of 0.1 wt.%, Cu content of 0.5 wt.%, and Re content of 0.001 wt.% , Nd content is 0.001 wt.%, In content is 0.001 wt.%, and the balance is Sn, which is directly mixed and smelted under the protection of nitrogen to prepare solder.

Embodiment 2

[0034] A Sn-Ag-Cu low-silver lead-free solder containing Nd, Re and In, including the following components: Ag content of 1.0 wt.%, Cu content of 2.0 wt.%, and Re content of 0.25 wt.% , Nd content is 0.1 wt.%, In content is 0.2 wt.%, the balance is Sn, and it is directly mixed and smelted under the protection of nitrogen to prepare solder.

Embodiment 3

[0036] A Sn-Ag-Cu low-silver lead-free solder containing Nd, Re, In, including the following components: Ag content of 0.2wt.%, Cu content of 0.6wt.%, Re content of 0.06wt. %, Nd content is 0.05 wt.%, In content is 0.1 wt.%, the balance is Sn, and the brazing filler metal is directly mixed and smelted under the protection of nitrogen.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses Sn-Ag-Cu low-silver lead-free brazing filler metal containing Nd, Re and In and belongs to the technical field of brazing filler metal. Sn-Ag-Cu brazing filler metal is specifically doped with the Nd, the Re and the In. The Sn-Ag-Cu low-silver lead-free brazing filler metal comprises, by weight, 0.1% to 1.0% of Ag, 0.5% to 2.0% of Cu, 0.001% to 0.25% of Re, 0.001% to 0.1% of Nd, 0.001% to 0.2% of In and the balance Sn. Through the synergistic effect among components, the melting point of the brazing filler metal alloy is reduced, the wetting performance is improved, and the stretching performance and thermal fatigue performance of a welding point are remarkably improved.

Description

Technical field [0001] The invention relates to the technical field of solders, in particular to a Sn-Ag-Cu low-silver lead-free solder containing Nd, Re, and In. Background technique [0002] As the feature size of microelectronic products continues to shrink, the integration density and integration complexity of IC continue to increase, the number of I / O pins of the chip increases, and the density of I / O pins continues to increase, which promotes fine-pitch solder joints and High-density packaging technology, such as the development of ball grid array packaging, chip-scale packaging, flip chip packaging, wafer-level packaging and 3D packaging technology. The salient feature of high-density packaging technology is the gradual reduction of the feature size of the interconnect solder joints, resulting in a sharp decrease in the ratio of the volume of the solder alloy to the interface area of ​​the metal pad, and the acceleration of the IMC growth at the interface of the interconne...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): B23K35/26B23K35/40
CPCB23K35/262B23K35/40
Inventor 唐宇骆少明李国元王克强周玉梅
Owner ZHONGKAI UNIV OF AGRI & ENG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products