Single crystal silicon growth control method

A technology of growth control and single crystal silicon, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of reducing production efficiency, reducing the quality of supercrystals, and reducing the length of silicon single crystal rods, etc.

Active Publication Date: 2016-03-16
SHANGHAI ADVANCED SILICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are two basic ways to achieve it, one is to reduce the length of the silicon single crystal rod, but it will greatly reduce the production efficiency
The second is to lower the temperature of the silicon single cryst

Method used

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Examples

Experimental program
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Example Embodiment

[0019] Example 1

[0020] The long diameter is 8 inches single crystal silicon rod, and the quartz crucible with the inner diameter of 22 inches (inner diameter 560mm) is used. The height of the raised surface 2 in the reflection and cooling device is 250mm, and the surface roughness is controlled at 8-10μm by shot blasting. Plasma vapor deposition method is used to plate silicon carbide porous ceramic coating on the surface, the thickness of the coating is 2.42μm, the inner pore size of the coating is controlled within 1.2μm-1.5μm, and the density is greater than 65%. The vertical plane 2 is 20 mm away from the side surface of the single crystal silicon rod.

[0021] Semi-parabolic arc section 3, the opening of the parabola faces the crystal rod, the opening height is 130mm, and the arc section 3 length is 130mm. The length of the horizontal section 4 is 20mm. The distance between the vertical section 5 and the crucible wall is 10mm. The semi-parabolic arc section 3, the horiz...

Example Embodiment

[0025] Example 2

[0026] The long diameter is 8 inches single crystal silicon rod, and the inner diameter is 24 inches (inner diameter 610mm) quartz crucible. The height of the raised surface 2 in the reflection and cooling device is 250mm, and the surface roughness is controlled at 8-10μm by shot blasting. Plasma vapor deposition method is used to plate silicon carbide porous ceramic coating on the surface, the thickness of the coating is 2.42μm, the inner pore size of the coating is controlled at 1.2μm-1.5μm, and the density is greater than 65%. The vertical plane 2 is 20 mm away from the side surface of the single crystal silicon rod.

[0027] Semi-parabolic arc section 3, the opening of the parabola faces the crystal rod, the opening height is 130mm, and the arc section 3 length is 155mm. The length of the horizontal section 4 is 20mm. The distance between the vertical section 5 and the crucible wall is 10mm. The semi-parabolic arc section 3, the horizontal section 4 and t...

Example Embodiment

[0029] Example 3

[0030] The long diameter is 12 inches (diameter 305) single crystal silicon rod, and the inner diameter is 26 inches (inner diameter 660mm) quartz crucible. The height of the upright surface 2 in the reflection and cooling device is 250mm, and the surface roughness is controlled at 8-10μm by shot blasting. Plasma vapor deposition method is used to plate silicon carbide porous ceramic coating on the surface, the thickness of the coating is 2.42μm, the inner pore size of the coating is controlled within 1.2μm-1.5μm, and the density is greater than 65%. The vertical plane 2 is 20 mm away from the side surface of the single crystal silicon rod.

[0031] Semi-parabolic arc section 3, the opening of the parabola faces the crystal rod, the opening height is 150mm, and the arc section 3 is 125mm in length. The length of the horizontal section 4 is 20mm. The distance between the vertical section 5 and the crucible wall is 10mm. The semi-parabolic arc section 3, the ho...

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Abstract

The invention provides a single crystal silicon growth control method. The 700-920 DEG C zone of a silicon crystal rod is cooled by adopting a reflecting and cooling device, the length of the zone can be smaller than 200 mm, and the speed of lifting and pulling the silicon crystal rod is greater than 1.12 mm/min, so that the standing time of the crystal rod in the temperature interval is less than 180 minutes to avoid the formation of OSF defects. Radiating infrared rays of a molten silicon fluid are reflected by adopting a semi-parabolic arc-shaped reflection surface to irradiate the side face of the silicon crystal rod at the growth interface position and reduce the cooling speed of the lateral surface, so that the temperature gradient of the center and the surface of the growth interface position of the silicon crystal rod is reduced, and an oxygen element and doped elements on a wafer are radially and evenly distributed. The rays of a high-temperature crucible wall are reflected by adopting a smooth and clean surface to avoid the influence on the crystal rod.

Description

technical field [0001] The invention relates to a single crystal silicon growth method, which relates to controlling the radial temperature gradient near the growth interface and controlling the formation of thermal oxygen donors in the single crystal during the Czochralski method single crystal growth. In particular, it relates to the radial and axial temperature control of silicon single crystal rods in the Czochralski method single crystal silicon growth process. Background technique [0002] The development trend of integrated circuit miniaturization, low power consumption, high computing speed, and narrow line width has higher and higher requirements for the quality and performance of silicon wafers used for large-scale integrated circuits. As the size of the ingot becomes larger, the temperature control of the ingot growth becomes more difficult, and the difficulty of growing single crystal silicon increases significantly. [0003] There are a variety of defects i...

Claims

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Application Information

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IPC IPC(8): C30B15/20C30B29/06
Inventor 张俊宝宋洪伟
Owner SHANGHAI ADVANCED SILICON TECH CO LTD
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