Single crystal silicon growth control method

Abstract

The invention provides a single crystal silicon growth control method. The 700-920 DEG C zone of a silicon crystal rod is cooled by adopting a reflecting and cooling device, the length of the zone can be smaller than 200 mm, and the speed of lifting and pulling the silicon crystal rod is greater than 1.12 mm / min, so that the standing time of the crystal rod in the temperature interval is less than 180 minutes to avoid the formation of OSF defects. Radiating infrared rays of a molten silicon fluid are reflected by adopting a semi-parabolic arc-shaped reflection surface to irradiate the side face of the silicon crystal rod at the growth interface position and reduce the cooling speed of the lateral surface, so that the temperature gradient of the center and the surface of the growth interface position of the silicon crystal rod is reduced, and an oxygen element and doped elements on a wafer are radially and evenly distributed. The rays of a high-temperature crucible wall are reflected by adopting a smooth and clean surface to avoid the influence on the crystal rod.

Description

technical field [0001] The invention relates to a single crystal silicon growth method, which relates to controlling the radial temperature gradient near the growth interface and controlling the formation of thermal oxygen donors in the single crystal during the Czochralski method single crystal growth. In particular, it relates to the radial and axial temperature control of silicon single crystal rods in the Czochralski method single crystal silicon growth process. Background technique [0002] The development trend of integrated circuit miniaturization, low power consumption, high computing speed, and narrow line width has higher and higher requirements for the quality and performance of silicon wafers used for large-scale integrated circuits. As the size of the ingot becomes larger, the temperature control of the ingot growth becomes more difficult, and the difficulty of growing single crystal silicon increases significantly. [0003] There are a variety of defects i...

AI Technical Summary

Problems solved by technology

There are two basic ways to achieve it, one is to reduce the length of the silicon single crystal rod, but it will greatly reduce the production efficiency

The second is to lower the temperature of the silicon single crystal rod, but the method of cooling may aggravate the temperature gradient in the radial direction of the crystal, which will be transferred to the growth interface, resulting in a decrease in the quality of the supercrystal

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