Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of thin film with Raman enhancing performance

A thin film and performance technology, applied in the field of magnetron sputtering to prepare Raman enhanced thin film substrates, can solve the problems of insufficient chemical stability, poor repeatability and stability, easy sulfidation and oxidation, etc., and achieve good Raman enhancement effect and stability. Good, high-sensitivity results

Active Publication Date: 2016-03-16
SHANGHAI NAT ENG RES CENT FORNANOTECH
View PDF5 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The use of nano-gold and silver colloidal particles has disadvantages such as poor repeatability and stability, while the use of silver thin films has good repeatability, but has the disadvantages of insufficient chemical stability and easy vulcanization and oxidation.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of thin film with Raman enhancing performance
  • Preparation method of thin film with Raman enhancing performance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] 1. Prepare a 150nm silver and silicon dioxide nanocomposite film on a smooth substrate by magnetron sputtering and co-sputtering. The composition of the film is adjusted by the power of the silver target and the silicon dioxide target to ensure that the mass percentage of Ag is 30%;

[0016] 2. Continue sputtering a layer of 30nm nano-silver film on the surface of the composite film;

[0017] 3. Put the above film into an annealing furnace, heat to 920° C. under a protective atmosphere for annealing treatment, keep for 3 hours, and cool to room temperature.

[0018] figure 1 It is the SEM image of the prepared nano film, it can be seen from the figure that nano silver particles are dispersed on the surface of the film.

Embodiment 2

[0020] 1. Prepare a 100nm silver and silicon dioxide nanocomposite film on a smooth substrate by magnetron sputtering co-sputtering. The targets used for sputtering are silver target and silicon dioxide target respectively. 0.8Pa, adjust the power of the silver target and the silicon dioxide target to ensure that the mass percentage of Ag is 70%;

[0021] 2. Continue sputtering a layer of 40nm nano-silver film on the surface of the composite film;

[0022] 3. Put the film above into an annealing furnace, heat it to 900° C. under a protective atmosphere for annealing treatment, keep it for 3 hours, and cool it down to room temperature.

[0023] The prepared film substrate was used for detection of 5cb liquid crystal molecules.

Embodiment 3

[0025] 1. Prepare a 130nm silver and silicon dioxide nanocomposite film on a smooth substrate by magnetron sputtering co-sputtering. The targets used for sputtering are silver target and silicon dioxide target respectively. is 0.8Pa, and the film composition is adjusted by the power of the silver target and the silicon dioxide target to ensure that the mass percentage of Ag is 50%;

[0026] 2. Continue sputtering a layer of 50nm nano-silver film on the surface of the composite film;

[0027] 3. Put the above film into an annealing furnace, heat to 940° C. under a protective atmosphere for annealing treatment, keep it for 1 hour, and cool to room temperature.

[0028] The prepared film substrate was used for detection of 5cb liquid crystal molecules.

[0029] The Raman-enhanced thin film substrate prepared in the above examples has a simple preparation process, good repeatability, and the prepared thin film has stable performance, which can meet various detection application r...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a preparation method of a thin film with a Raman enhancing performance. A silver and silicon dioxide nano composite thin film with the size of 100nm-150nm is prepared on a smooth quartz or mono-crystalline silicon substrate by using magnetron sputtering co-sputtering; one layer of nano silver thin film with the size of 30nm-50nm is continually sputtered on the surface of the composite thin film; the thin film is put into an annealing furnace and is heated to 900-940 DEG C under a protective atmosphere to be annealed for 1-3 hours; and then the thin film is cooled to a room temperature to obtain the thin film with the Raman enhancing performance. The preparation method has a simple preparation process, good repeatability and good stability.

Description

technical field [0001] The invention belongs to the field of nano film preparation and detection analysis, and relates to a method for preparing a Raman enhanced film substrate by magnetron sputtering. Background technique [0002] Raman scattering is a kind of scattering phenomenon of light. It is when the photon of monochromatic incident light interacts with the molecule to be measured, an inelastic collision occurs, energy exchange occurs between the photon and the molecule, and the photon changes the direction and frequency of motion. Raman scattering spectroscopy is a powerful molecular detection technique due to its specificity for molecular and chemical bond vibrational peaks. Due to the very small scattering cross-section of Raman scattering, Raman scattering is a very weak process, which is not conducive to the qualitative analysis of trace substances. Whether the scattering can be enhanced is the key to the practical use of Raman scattering spectroscopy detection ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/65
CPCG01N21/658
Inventor 何丹农尹桂林卢静
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products