Preparing method of copper-base electric contact material enhanced by in-situ grown graphene

An electrical contact material, in-situ growth technology, applied in metal material coating process, metal processing equipment, gaseous chemical plating, etc., can solve the problems of high price, low cost performance, uneven dispersion of graphene, etc., to avoid agglomeration , performance improvement, quality assurance and uniform dispersion effect

Inactive Publication Date: 2016-04-13
HARBIN INST OF TECH
View PDF1 Cites 25 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims to solve the problems of high price and low cost performance of existing silver-based electrical contact composite materials. When copper-based composite materials with good performance are used to replace metal silver, there are problems of uneven dispersion and defects of graphene in copper, and provide A kind of preparation method of in-situ growth graphene reinforced copper-based electrical contact material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparing method of copper-base electric contact material enhanced by in-situ grown graphene

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0016] Specific Embodiment 1: The preparation method of a kind of in-situ growth graphene reinforced copper-based electrical contact material described in this embodiment is specifically carried out according to the following steps:

[0017] 1. Copper powder is placed in the plasma-enhanced chemical vapor deposition vacuum device. After vacuuming, hydrogen gas is fed into the plasma-enhanced chemical vapor deposition vacuum device with a gas flow rate of 30 sccm, and the pressure in the plasma-enhanced chemical vapor deposition vacuum device is adjusted to be 200Pa. Under a hydrogen atmosphere, raise the temperature to 400°C-800°C, and anneal and hold for 15min-25min at a temperature of 400°C-800°C;

[0018] 2. Introduce methane gas and argon gas, adjust the flow rate of methane gas to 1sccm~20sccm, adjust the flow rate of argon gas to 100sccm, adjust the pressure in the plasma-enhanced chemical vapor deposition vacuum device to 200Pa~1000Pa, and then set the RF power to 50W~ ...

specific Embodiment approach 2

[0023] Embodiment 2: This embodiment differs from Embodiment 1 in that: the particle size of the copper powder in step 1 is 100 nm˜100 μm. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0024] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the purity of the copper powder in step 1 is more than 99% by mass. Others are the same as in the first or second embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparing method of a copper-base electric contact material enhanced by in-situ grown grapheme, relates to the preparing method of the copper-base electric contact material, solves the problems that a conventional silver-base electric contact composite material is high in cost and low in cost performance, and overcomes the defect that when a copper-base composite material with high performance replaces metal silver, grapheme is dispersed in copper nonuniformly. The method comprises the following steps: placing copper powder in a plasma enhanced chemical vapor deposition vacuum device, introducing hydrogen, insulating at a high temperature, introducing methane gas for deposition, stopping introducing methane gas after the deposition is finished, and finally cooling to be below the room temperature to obtain grapheme / copper composite powder.

Description

technical field [0001] The invention relates to a preparation method of a copper-based electrical contact material. Background technique [0002] Electrical contact materials are mainly used in contact parts of switching appliances, instruments and meters, etc., which directly undertake the function of connecting and disconnecting circuits and carrying normal working current or carrying overload current within a certain period of time. Electrical contact materials are widely used in various low-voltage electrical industries such as relays, air switches, AC and DC contactors, and involve various fields such as civil, industrial, military, aviation, aerospace, and information in modern society. The key functions of various electrical appliances, For example, the on-off capability of power distribution appliances, the reliability of relays, and the electrical life of control appliances all depend on the working performance and quality of electrical contact materials. Therefore...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/513C23C16/56B22F1/02
CPCC23C16/26C23C16/513C23C16/56B22F1/16
Inventor 亓钧雷刘瑜琳林景煌郭佳乐冯吉才
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap