Preparing method of copper-base electric contact material enhanced by in-situ grown graphene
An electrical contact material, in-situ growth technology, applied in metal material coating process, metal processing equipment, gaseous chemical plating, etc., can solve the problems of high price, low cost performance, uneven dispersion of graphene, etc., to avoid agglomeration , performance improvement, quality assurance and uniform dispersion effect
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2016-04-13
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1
Abstract
Description
technical field
[0001] The invention relates to a preparation method of a copper-based electrical contact material. Background technique
[0002] Electrical contact materials are mainly used in contact parts of switching appliances, instruments and meters, etc., which directly undertake the function of connecting and disconnecting circuits and carrying normal working current or carrying overload current within a certain period of time. Electrical contact materials are widely used in various low-voltage electrical industries such as relays, air switches, AC and DC contactors, and involve various fields such as civil, industrial, military, aviation, aerospace, and information in modern society. The key functions of various electrical appliances, For example, the on-off capability of power distribution appliances, the reliability of relays, and the electrical life of control appliances all depend on the working performance and quality of electrical contact materials. Therefore...
Examples
specific Embodiment approach 1
[0016] Specific Embodiment 1: The preparation method of a kind of in-situ growth graphene reinforced copper-based electrical contact material described in this embodiment is specifically carried out according to the following steps:
[0017] 1. Copper powder is placed in the plasma-enhanced chemical vapor deposition vacuum device. After vacuuming, hydrogen gas is fed into the plasma-enhanced chemical vapor deposition vacuum device with a gas flow rate of 30 sccm, and the pressure in the plasma-enhanced chemical vapor deposition vacuum device is adjusted to be 200Pa. Under a hydrogen atmosphere, raise the temperature to 400°C-800°C, and anneal and hold for 15min-25min at a temperature of 400°C-800°C;
[0018] 2. Introduce methane gas and argon gas, adjust the flow rate of methane gas to 1sccm~20sccm, adjust the flow rate of argon gas to 100sccm, adjust the pressure in the plasma-enhanced chemical vapor deposition vacuum device to 200Pa~1000Pa, and then set the RF power to 50W~ ...
specific Embodiment approach 2
[0023] Embodiment 2: This embodiment differs from Embodiment 1 in that: the particle size of the copper powder in step 1 is 100 nm˜100 μm. Others are the same as in the first embodiment.
specific Embodiment approach 3
[0024] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the purity of the copper powder in step 1 is more than 99% by mass. Others are the same as in the first or second embodiment.