A kind of preparation method of front electrode of crystalline silicon solar cell

Abstract

A preparation method for a front side electrode of a crystalline silicon solar cell, comprising the step of forming a main gate line (10) and an auxiliary gate line (20) on a solar cell. The method comprises: S101, providing a screen printing plate having the pattern of the main gate line (10), and forming the main gate line (10) on a solar cell by means of a screen printing process; S102, providing a steel screen printing plate having the pattern of the auxiliary gate line (20), and forming the auxiliary gate line (20) on the solar cell by means of a steel screen printing process; and S103, sintering the solar cell provided with the main gate line (10) and the auxiliary gate line (20). In the method, the main gate line (10) and the auxiliary gate line (20) are respectively prepared by means of two printing processes, so that an aspect ratio of the auxiliary gate line (20) can be improved, a power loss brought by the resistance of gate lines can be reduced, and an optical loss also can be reduced.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing, in particular to a method for preparing a front electrode of a crystalline silicon solar cell. Background technique [0002] A crystalline silicon solar cell is an electronic component that converts sunlight energy into electrical energy. The preparation of crystalline silicon solar cells generally goes through processes such as texturing, diffusion, coating, screen printing, and sintering. Texturing is divided into single crystal and polycrystalline texturing. Monocrystalline cells use alkali texturing to form pyramid textures on the surface of silicon wafers. Polycrystalline cells use acid etching to form pitted textures on the surface of silicon wafers. The suede surface on the silicon surface can increase the absorption of sunlight on the surface of the battery to achieve light trapping; the diffusion process is to form a P-N junction inside the silicon wafer through thermal...

AI Technical Summary

Problems solved by technology

[0005] figure 2 It is a schematic diagram of the structure of the screen screen, such as figure 2 As shown, the screen screen 3 is made of a wire mesh, and the screen pattern part inevitably has nodes where metal wires 3a and metal wires 3a intersect, which hinder the passage of slurry, and the slurry is viscous , leading to more serious hindrance in the process of slurry penetration, limiting the aspect ratio

Especially for the part of the sub-grid pattern 2a, since the width of the sub-grid 2 itself is relatively small, the sub-grid 2 is prepared by screen printing, which limits the aspect ratio of the sub-grid 2

image 3 is the 3D topography of the auxiliary grid lines prepared by screen printing, such as image 3 As shown, due to the wire and wire nodes in the screen pattern, the surface of the prepared auxiliary grid line is uneven, which increases the resistance and is not conducive to current collection.

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