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A kind of semiconductor device and its manufacturing method, electronic device

A manufacturing method and technology of electronic devices, applied in the direction of semiconductor/solid-state device manufacturing, circuits, transistors, etc., can solve the problems of decreased static noise tolerance, unsatisfactory users, and increased power consumption of devices, so as to improve threshold voltage and suppress Narrow channel effect, effect of improving performance

Active Publication Date: 2019-01-18
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The narrow channel effect will cause the threshold voltage (Vt) of the narrow channel device to drift, so that the threshold voltage Vt will decrease, the power consumption of the device will increase, and the static noise margin of the device such as SRAM will decrease.
At present, for PMOS devices using 28nm polysilicon / SiON, the threshold voltage Vt is reduced by about 70mv compared with wide-channel devices, which may not meet the needs of users

Method used

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  • A kind of semiconductor device and its manufacturing method, electronic device
  • A kind of semiconductor device and its manufacturing method, electronic device
  • A kind of semiconductor device and its manufacturing method, electronic device

Examples

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Embodiment 1

[0022] Below, refer to Figures 1a-1e as well as figure 2 The detailed steps of the manufacturing method of the semiconductor device proposed by the present invention will be described. Figures 1a-1e A schematic cross-sectional view of a semiconductor device obtained in key steps of a method for manufacturing a semiconductor device according to an embodiment of the present invention is shown.

[0023] First, refer to Figure 1a , providing a front-end device, the front-end device includes a substrate 101 and a PMOS device 102 and an NMOS device 103 formed on the substrate 101 . The constituent material of the substrate 101 may be at least one of the following materials: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI) , silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc. In one embodiment of the present invention, the substrate 101 is a silicon substrate.

[0024] In one embodiment, the...

Embodiment 2

[0042] The present invention also provides a semiconductor device, which is manufactured by the method described in the above-mentioned embodiments. Among them, N is implanted in the PMOS device area + Ions, which can increase the threshold voltage of the PMOS device, thereby suppressing the narrow channel effect and improving the performance of the PMOS device.

Embodiment 3

[0044] The present invention also provides an electronic device including a semiconductor device. Wherein, the semiconductor device is the semiconductor device described in the second embodiment, or the semiconductor device obtained according to the manufacturing method described in the first embodiment.

[0045] The electronic device of this embodiment can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV set, VCD, DVD, navigator, camera, video recorder, voice recorder, MP3, MP4, PSP, etc. , can also be any intermediate product including the semiconductor device. The electronic device according to the embodiment of the present invention has better performance due to the use of the above-mentioned semiconductor device.

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Abstract

The invention provides a semiconductor device, a manufacture method thereof and an electronic device. The method comprises that a front-end device which comprises a substrate and a PMOS device and an NMOS device formed on the substrate is provided; a stress layer is deposited on the PMOS device and an NMOS device; the stress layer on the PMOS device is removed; annealing is carried out; N+ ion implantation is carried out by taking the residual stress layer as a mask layer; and the residual stress layer is removed. According to the manufacture method of the semiconductor device, N+ ions are implanted into the area of the PMOS device, so that the threshold voltage of the PMOS device can be improved, the narrow channel effect is inhibited, and and the performance of the PMOS device is improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] With the increasing integration of semiconductor integrated circuits, the feature size of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) devices is getting smaller and smaller. When the device size shrinks, not only the length of the channel becomes shorter, but also the width of the channel shrinks in the same proportion. When the channel width of the device is narrow enough to be comparable to the width of the depletion layer of the source and drain, the device will deviate from the behavior of the wide channel. This effect on device performance caused by the narrow channel width is called narrow channel Road effect (NWE, Narrow Width Effect). When the width of the channel is reduced below 28nm, the narrow channel effect will become imposs...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8238H01L27/092
Inventor 李若园
Owner SEMICON MFG INT (SHANGHAI) CORP
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