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Novel adhesion promoters for substrate surface metallization

一种衬底表面、金属的技术,应用在金属材料涂层工艺、液态化学镀覆、叠加层的镀覆等方向,能够解决粘着性低无法等问题

Active Publication Date: 2018-07-13
ATOTECH DEUT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, the adhesion may be too low to provide a reliable bond between the metal layer and the underlying substrate

Method used

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  • Novel adhesion promoters for substrate surface metallization

Examples

Experimental program
Comparison scheme
Effect test

example

[0137] The following experiments are intended to illustrate the benefits of the invention without limiting its scope. The terms substrate and sample are used interchangeably herein.

[0138] General procedure: For adhesion testing purposes, the electroless metal layer is further electrolytically plated with 15 μm copper and thereafter heated at a temperature of 180° C. for 30 minutes. The copper plating was subjected to a 90° angle peel strength test. In the case of insufficient adhesion, the additional copper thickness strongly increases the probability of failure of the adhesive interface.

[0139] In the examples, metal oxide precursor compounds (MO) and plating catalysts (MeO) as listed and identified in Table 1 were employed.

example 1

[0140] Example 1 (comparative)

[0141] The following three commercially available samples (all: 1.5 x 4.0 cm slides) were used in this example:

[0142] ●Borosilicate glass (S a <10nm).

[0143] ●Wafer substrate, Si / SiO 2 (S a 2 layer,

[0144] ●Ceramic substrate, Al2 o 3 (S a = 450nm).

[0145] Samples were cleaned and processed as described below.

[0146] Make the substrate with 50ppm Pd ion and 2.5g / L SnCl 2 The commercially available Pd / Sn catalyst ( Activator (Activator), Atotech (Atotech Deutschland GmbH)) was contacted at a temperature of 25° C. for 5 minutes, followed by a deionized water rinse and an acceleration step ( Accelerator (Accelerator, Atotech) was used to increase the catalytic activity of the Pd catalyst.

[0147] Thereafter, the samples were completely submerged in an electroless Cu bath containing copper sulfate as a source of copper ions and formaldehyde as a reducing agent at 37°C for 4 minutes, resulting in a plating thickness of about ...

example 2

[0153] The following three commercially available samples (total: 1.5 x 4.0 cm slides) were used:

[0154] ●Glass (S a <10nm).

[0155] ●Wafer substrate, Si / SiO 2 (S a 2 layer,

[0156] ●Ceramic substrate, Al 2 o 3 (S a = 450nm).

[0157] After cleaning, the samples were sequentially coated with ZnO and CuO layers by spray pyrolysis. First, spray the substrate containing 0.05mol / l Zn(OAc) on the substrate heated at 400°C by a hand-held air brush device 2 ×2H 2 EtOH solutions of metal oxide precursor compounds of O (spray pyrolysis). Subsequently, at a temperature of 400 ° C, a process containing 0.05 mol / l Cu(OAc) 2 ×H 2 Another spray pyrolysis of transition metal plating catalyst precursor compounds of O in EtOH.

[0158] The substrate was then heated in air at a temperature of 500°C for 60 minutes. The formed ZnO metal oxide layer had a thickness of about 150 nm, and the formed CuO layer had a thickness of about 30 nm.

[0159] After sintering, the samples wer...

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Abstract

The present invention provides a method for the metallization of non-conductive substrates that provides high adhesion of the deposited metal to the substrate material and thereby forms a durable bond. The method employs a novel combination of a metal oxide compound that promotes adhesion and a transition metal plating catalyst compound that promotes metal layer formation.

Description

technical field [0001] The present invention relates to a novel method of metallizing non-conductive substrates such as glass, ceramic and silicon-based semiconductor type surfaces by applying catalytically active metal oxide compositions. The method produces a metal-plated surface that exhibits high adhesion between the glass or ceramic substrate and the metallization, while leaving the smooth substrate surface intact. [0002] The invention is applicable in the field of printed electronic circuits such as thin line circuits on glass and ceramics for signal distribution (flip chip glass interposer), flat panel displays and radio frequency identification (RFID) antennas. Also, it is suitable for metal plating of silicon-based semiconductor substrates. Background technique [0003] Various methods are known in the art for metallizing a substrate. [0004] A conductive substrate can be directly plated with another metal by various wet chemical plating methods such as electro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D5/50C23C18/12C23C18/16C23C18/18C23C18/31C23C18/34C23C18/40C23C24/00C25D5/18C25D5/38C23C18/36
CPCC25D3/18C25D3/38C25D5/50C23C18/1216C23C18/1245C23C18/1258C23C18/1295C23C18/165C23C18/1651C23C18/1653C23C18/1694C23C18/1886C23C18/31C23C18/34C23C18/36C23C18/40C23C18/405C23C18/1875C23C18/1692C03C17/36C03C17/3607C03C17/3642C03C17/3649C03C17/3697C03C17/3618C03C2217/70C03C2218/111C03C2218/112C03C2218/115C04B41/0072C04B41/5072C04B41/5075C04B41/51C04B41/5111C04B41/52C23C18/1642C23C18/1882C23C18/1893C23C26/00C23C28/3225C23C28/345C25D3/12H01L21/2885
Inventor 刘志明付海罗色拉·汉格那卢茨·勃兰特塔发瓦·马格亚
Owner ATOTECH DEUT GMBH