A kind of preparation method of superluminescent light-emitting diode

Abstract

The invention relates to a method for preparing superradiance light-emitting diodes. The method is characterized by including the following steps that 1, InP substrates are subjected to epitaxial growth through MOCVD to form optimized epitaxial wafers; 2, SiO2 dielectric layers with the thickness of 200 nm are deposited on the surfaces of the epitaxial wafers and subjected to photoetching and wet etching to form specific ridge waveguide structures; 3, the surface dielectric of the wafers with the ridge waveguide structures is removed, passivation layers grow, the wafers are subjected to photoetching, metal sputtering, thinning and metal sputtering, preparing of P-type contact electrodes, thinning and preparing of N-type contact electrodes of the wafers are achieved accordingly, and the wafers are alloyed to form chips; 4, the chips are dissociated to form bar strips, and high-transmittance and high-reflection films are arranged on the light outgoing faces and the backlight faces of the bar strips in an evaporation mode. According to the method, the SLD chips are prepared through optimized epitaxial structures and optimized doping distribution, the chips prepared with the method are high in output power and coupling efficiency, and the fiber outlet power of devices can be effectively increased.

Description

technical field [0001] The invention relates to a preparation method of a superluminescent light-emitting diode chip, in particular to a preparation method of a 1550nm SLD chip with high output power and low divergence angle. Background technique [0002] Superluminescent light-emitting diodes have the characteristics of wide spectrum, weak temporal coherence, high output power, and high efficiency. The main advantages are wide spectrum and relatively large output power; it is widely used in fiber optic gyroscope, fiber optic sensing, optical coherence tomography and other fields. [0003] For SLD devices, the high fiber output power can ensure the high precision and high sensitivity of the fiber optic gyroscope in the case of high-speed rotation; at the same time, the high fiber output power can improve the axial resolution of optical coherence tomography . Therefore, it is of great significance to increase the fiber output power of SLD. Conventional SLD devices have rela...

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Problems solved by technology

Therefore, it is of great significance to increase the fiber output power of SLD. Conventional SLD devices have relatively low output power of the chip itself, and at the same time, the divergence angle is large, and the fiber coupling efficiency is low, so it is difficult to increase the fiber coupling output power.

[0004] For the chip, increasing the cavity length of the chip is a direct way to increase the optical power. However, when the cavity length is increased to more than 1mm, the large current injection will easily make the longitudinal distribution of carriers uneven, resulting in spatial hole burning and gain saturation. , making the output power saturate prematurely

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