Terahertz wave spectrum measurement device and measurement method thereof based on diffraction effect
A diffraction effect and measurement device technology, applied in the field of far-infrared detection, can solve the problems of narrow spectral measurement range, low resolution, vibration sensitivity, etc., and achieve the effect of wide spectral restoration range, high resolution and low cost
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Embodiment 1
[0063] The structure diagram of the terahertz spectrum measuring device in this embodiment is as follows image 3 Shown. In this embodiment, the diffraction device 22 is an intrinsic semiconductor sheet 3 with a plasma frequency lower than the frequency of the terahertz wave. The intrinsic semiconductor used can be intrinsic gallium arsenide (GaAs) or intrinsic silicon (Si). In this embodiment, the diffraction controller 24 is a laser 6, a lens group 8 (reflectors can also be used instead), and a spatial light modulator. The spatial light modulator uses a digital micromirror 7 (Degital Micromirror Device). The laser 6 can be a titanium-sapphire laser. The detector 5 is a terahertz wave detector, such as GolayCell or Bolometer. The terahertz wave to be measured passes through the intrinsic semiconductor 3 and the detector 5 sequentially along the transmission direction. The diffraction controller 24 sends a laser pattern signal to the surface of the intrinsic semiconductor 3...
Embodiment 2
[0096] The structure of the terahertz spectrum measuring device in this embodiment is as follows Image 6 with Figure 7 As shown, it includes a terahertz wave collimator 2, an intrinsic semiconductor sheet 3 with a plasma frequency lower than the terahertz wave frequency, a metal film 17, a terahertz wave detector 5, a laser 6, and the like. In order to automatically realize the value collection and calculation in the process of spectral restoration, this embodiment also includes a calculation processing unit 25 connected to the signal of the detector 5 ( Image 6 with Figure 7 Not shown in). In this embodiment, the diffractive device 22 is composed of one or more diffractive holes or diffractive slits 10 that can transmit terahertz waves in an orderly or disorderly distribution in the metal thin film 17. The refraction device 23 is used in this embodiment. In the example, the intrinsic semiconductor sheet 3 is, and the diffraction controller 24 is the laser 6 and the lens gro...
Embodiment 3
[0098] The structure of the terahertz spectrum measuring device in this embodiment is as follows Figure 8 As shown, it includes a terahertz wave collimation device 2, a liquid crystal array and its control system 29, a terahertz wave detector 5, and the like. In order to automatically realize the value collection and calculation in the process of spectral restoration, this embodiment also includes a calculation processing unit 25 connected to the signal of the detector 5 ( Figure 8 Not shown in). The diffraction device 22 is composed of a liquid crystal array system 29 that can modulate the transmission of terahertz waves in this embodiment, and the diffraction controller 24 is composed of a liquid crystal array controller in this embodiment. Through the control of the liquid crystal array controller, some of the liquid crystal cells in the liquid crystal array have greater transmittance to terahertz waves, while some liquid crystal cells have less transmission to terahertz wa...
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Abstract
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Application Information
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