Terahertz wave spectrum measurement device and measurement method thereof based on diffraction effect

A diffraction effect and measurement device technology, applied in the field of far-infrared detection, can solve the problems of narrow spectral measurement range, low resolution, vibration sensitivity, etc., and achieve the effect of wide spectral restoration range, high resolution and low cost

Active Publication Date: 2016-06-15
南京华睿智光信息科技研究院有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to overcome the technical problems existing in the prior art such as large volume, high cost, sensitivity to vibration, l

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  • Terahertz wave spectrum measurement device and measurement method thereof based on diffraction effect
  • Terahertz wave spectrum measurement device and measurement method thereof based on diffraction effect
  • Terahertz wave spectrum measurement device and measurement method thereof based on diffraction effect

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Embodiment 1

[0063] The structure diagram of the terahertz spectrum measuring device in this embodiment is as follows image 3 Shown. In this embodiment, the diffraction device 22 is an intrinsic semiconductor sheet 3 with a plasma frequency lower than the frequency of the terahertz wave. The intrinsic semiconductor used can be intrinsic gallium arsenide (GaAs) or intrinsic silicon (Si). In this embodiment, the diffraction controller 24 is a laser 6, a lens group 8 (reflectors can also be used instead), and a spatial light modulator. The spatial light modulator uses a digital micromirror 7 (Degital Micromirror Device). The laser 6 can be a titanium-sapphire laser. The detector 5 is a terahertz wave detector, such as GolayCell or Bolometer. The terahertz wave to be measured passes through the intrinsic semiconductor 3 and the detector 5 sequentially along the transmission direction. The diffraction controller 24 sends a laser pattern signal to the surface of the intrinsic semiconductor 3...

Embodiment 2

[0096] The structure of the terahertz spectrum measuring device in this embodiment is as follows Image 6 with Figure 7 As shown, it includes a terahertz wave collimator 2, an intrinsic semiconductor sheet 3 with a plasma frequency lower than the terahertz wave frequency, a metal film 17, a terahertz wave detector 5, a laser 6, and the like. In order to automatically realize the value collection and calculation in the process of spectral restoration, this embodiment also includes a calculation processing unit 25 connected to the signal of the detector 5 ( Image 6 with Figure 7 Not shown in). In this embodiment, the diffractive device 22 is composed of one or more diffractive holes or diffractive slits 10 that can transmit terahertz waves in an orderly or disorderly distribution in the metal thin film 17. The refraction device 23 is used in this embodiment. In the example, the intrinsic semiconductor sheet 3 is, and the diffraction controller 24 is the laser 6 and the lens gro...

Embodiment 3

[0098] The structure of the terahertz spectrum measuring device in this embodiment is as follows Figure 8 As shown, it includes a terahertz wave collimation device 2, a liquid crystal array and its control system 29, a terahertz wave detector 5, and the like. In order to automatically realize the value collection and calculation in the process of spectral restoration, this embodiment also includes a calculation processing unit 25 connected to the signal of the detector 5 ( Figure 8 Not shown in). The diffraction device 22 is composed of a liquid crystal array system 29 that can modulate the transmission of terahertz waves in this embodiment, and the diffraction controller 24 is composed of a liquid crystal array controller in this embodiment. Through the control of the liquid crystal array controller, some of the liquid crystal cells in the liquid crystal array have greater transmittance to terahertz waves, while some liquid crystal cells have less transmission to terahertz wa...

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Abstract

The invention discloses a terahertz wave spectrum measurement device and measurement method thereof based on diffraction effect. A to-be-measured terahertz wave forms a terahertz diffracted wave after going through a diffraction device, and the diffracted wave is received by a detector under the force of different control conditions of a diffraction controller. The diffraction device can drive incident terahertz waves of different frequencies to form different diffracted wave intensity angular distributions. The diffraction controller is used to change the diffraction field distribution of the terahertz diffracted wave, passing through the diffraction device, at the position of the detector, so that the detector detects different diffracted wave intensities of the constant frequency incident terahertz wave under the force of the different control conditions of the diffraction controller. A calculation processing unit is used to receive measurement results of the detector and conducts data analysis and processing. Compared with terahertz time-domain wave spectrum measurement devices in the prior art, the device is smaller in size, easier to produce, and lower in cost. The device is high in frequency resolution and wide in spectrum measurement range.

Description

Technical field [0001] The invention relates to a terahertz spectrum measurement device and a measurement method thereof, in particular to a terahertz spectrum measurement device and a spectrum measurement method based on diffraction effect, and belongs to the technical field of far infrared detection. Background technique [0002] Terahertz waves (THz waves) or terahertz rays (THz rays) were officially named in the mid to late 1980s, and scientists previously referred to them as far-infrared rays. Terahertz waves generally refer to electromagnetic waves with a frequency in the range of 0.1THz to 10THz, and the wavelength is about 0.03mm to 3mm, which is between microwave and infrared waves. The main characteristics of terahertz waves are: (1) terahertz wave photons have lower energy and will not cause photodamage and photochemical ionization in biological tissues; (2) because the terahertz spectrum of matter contains rich physical and Chemical information, such as the vibration...

Claims

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Application Information

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IPC IPC(8): G01J3/18G01J3/28G01J3/02G01N21/3586
CPCG01J3/0229G01J3/18G01J3/28G01N21/3586
Inventor 杨涛黄维何浩培朱永元
Owner 南京华睿智光信息科技研究院有限公司
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