High-performance pore filling and copper plating solution

A solution and copper plating technology, which is applied to the formation of electrical connection of printed components, electrical components, printed circuit manufacturing, etc., can solve the problems of narrow copper plating solution process window, high organic carbon content, easy aging and failure, etc., to achieve outstanding substantive Features, life extension, effect of improving plating quality

Inactive Publication Date: 2016-06-22
杭州乐芙新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using the interaction between the three to realize the full copper filling of blind holes, the ternary additives can adjust their respective compositions, which is flexible and convenient, but the control is complicated, it is easy to lose sight of the other, and there is mutual influence between them, so the current application is not good. widely
In addition, because the ternary system is usually only suitable for basic solution systems such as copper sulfate-sulfuric acid, the system has a small tolerance to organic carbon, and the ternary system copper plating additive itself has a high organic carbon content, which leads to the ternary copper plating additive The process window of the copper plating solution of the system is narrow, the service life is short, and it is prone to aging and failure

Method used

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  • High-performance pore filling and copper plating solution
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  • High-performance pore filling and copper plating solution

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Experimental program
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Effect test

Embodiment 1

[0023] The additive prepared by the present invention is added to the copper plating basic solution, the mass fraction of the additive in the basic solution is 1 ppm, and the copper plating basic solution is a combination of copper methanesulfonate and methanesulfonic acid, wherein , The concentration of copper methanesulfonate is 250g / L, and the concentration of methanesulfonic acid is 40g / L.

[0024] Using the copper plating solution prepared above, the cleaned hole-filled samples were plated with hole-filling under the conditions of a current density of 1.5ASD and a plating time of 40min. The effective filling aperture is 60-80μm and the thickness-to-diameter ratio is 0.5- For blind holes of 1, the surface copper thickness is controlled below 10μm. The metallographic microscope pictures of the sample before and after the hole filling and electroplating are as follows: figure 1 with figure 2 .

Embodiment 2

[0026] The additive prepared by the present invention is added to the copper plating basic solution, the mass fraction of the additive in the basic solution is 0.8 ppm, and the copper plating basic solution is composed of a combination of copper methanesulfonate and methanesulfonic acid, Among them, the concentration of copper methanesulfonate is 300 g / L, and the concentration of methanesulfonic acid is 60 g / L.

[0027] The cleaned hole-filled sample is electroplated under the conditions of current density of 1.6ASD and plating time of 35min. The effective filling of blind holes with a diameter of 50-60μm and a thickness-to-diameter ratio of 0.5-1, the copper thickness of the surface is controlled within 10μm or less. The metallographic microscope pictures of the sample before and after the hole filling and electroplating are as follows: image 3 with Figure 4 .

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Abstract

The invention provides a high-performance pore filling and copper plating solution which comprises a basic solution and a copper plating additive. The basic solution is copper methane sulfonate and methanesulfonic acid, and the copper plating additive is a macromolecule polymer prepared from an organic amine monomer, chloropropene, sulfur dioxide and the like through a polymerization reaction. Compared with the prior art, helium atoms and sulfur dioxide groups are creatively introduced into the amine monomer, and the novel high-performance copper plating additive is formed through polymerization. On the one hand, the unitary copper plating additive is applied to pore filling electroplating, production and control are easy, and therefore the pore filling and copper plating production efficiency is effectively improved; on the other hand, due to the fact that the unitary electroplating additive is combined with the copper methane sulfonate and methanesulfonic acid system, tolerance to organic carbon is high, the solution service life is long, the additive is small in dosage and small in consumption, and copper plating quality is greatly improved.

Description

Technical field [0001] The invention relates to a high-performance hole filling electroplating solution for printed circuit boards and integrated circuit packaging substrates. Background technique [0002] Electroplating is an important process in the production process of printed circuit boards (PCB, PrintedCircuitBoard) and integrated circuit packaging substrates (ICsubstrate). It uses electrolysis to make metals realize interlayer interconnection under the action of electrodeposition. At present, with the increasing degree of integration of electronic components and increasing power, it is becoming more and more common to realize inter-layer interconnection in the form of full copper filling. [0003] However, usually all copper-filled copper plating solutions use a ternary copper plating additive system, and usually ternary copper plating additives are called accelerators, wetting agents, and leveling agents. Using the interaction between the three to realize the full copper f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/38C25D7/00H05K3/42
CPCC25D3/38C25D7/00H05K3/423H05K2203/0723
Inventor 程敏敏张斌过勇
Owner 杭州乐芙新材料科技有限公司
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