The invention discloses a micro-pore electroplated
copper filling method for a three-dimensional (3D)
copper interconnection high
aspect ratio through-
silicon-via technology. The micro-pore electroplated
copper filling method comprises the following steps of: 1, preparing an
electroplating solution of a copper
methane sulfonate system; 2,
wetting micro pores of the through-
silicon-via technology through
electroplating pretreatment; 3, electrifying and slotting, and increasing the ultralow current
diffusion step, so that the copper
ion and additives are reasonably distributed on the surfaces and inside the micro pores through the through-
silicon-via technology; 4, connecting a silicon
wafer where the through-silicon-via technology is positioned with a
cathode of a power supply, so that the
electroplating surface of the
wafer is completely soaked in the electroplating solution, step-by-step current electroplating is performed under the condition that the
cathode is rotated or stirred, and the electroplating conditions comprise the
current density of 0.01-10A / dm<2> and the temperature of 15-30 DEG C; and 5, completely and thoroughly washing the
wafer by using deionized water, performing spin-dry or blow-dry. The provided micro-pore electroplated copper filling method for the 3D copper
interconnection high
aspect ratio through-silicon-via technology is high in pore filling speed and thin in surface copper, hole and crack risks are avoided, and complete filling of high-difficulty hole with the depth-to-
width ratio of more than 10:1 can be realized.