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Electroplating copper cylinder solution suitable for oversize current density and electroplating method

A technology of current density and electroplating copper, applied in the field of materials, can solve the problems of voids, long time consumption of electroplating copper pillars, unstable signal transmission, etc.

Active Publication Date: 2020-04-28
江苏矽智半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the deficiencies in the above-mentioned technologies, the present invention provides an electroplating copper column solution and an electroplating method suitable for super-high current density. Problems such as voids and burns can effectively prevent the shortcomings of unstable signal transmission, large resistance, and excessive power loss due to voids and burns, and further improve the reliability of electronic products

Method used

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  • Electroplating copper cylinder solution suitable for oversize current density and electroplating method
  • Electroplating copper cylinder solution suitable for oversize current density and electroplating method
  • Electroplating copper cylinder solution suitable for oversize current density and electroplating method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] The formula consists of the following:

[0065] Copper methanesulfonate: 200g / L;

[0066] Methanesulfonic acid: 50g / L;

[0067] Chloride ion: 50mg / L, mainly provided by one or more in copper chloride dihydrate, sodium chloride or hydrochloric acid;

[0068] Sodium polydisulfide dipropane sulfonate: 4mg / L;

[0069] Polyethylene glycol: 60mg / L;

[0070] Tobacco green: 80mg / L;

[0071] Solution preparation process: Take 1L solution as an example, take 300ml of water, add copper methanesulfonate: 200g; methanesulfonic acid: 50g, copper chloride dihydrate: 0.114g, sodium polydithiodipropanesulfonate: 0.004g ; Polyethylene glycol: 0.06g; Yanlu green: 0.08g, stir to dissolve, and then add water to the liquid level to 1L.

[0072] Process parameters for electroplating using the copper electroplating solution prepared in this example: pre-treatment vacuuming: 5min, solution exchange time: 5min, temperature: 35±2°C, current density: 30A / dm 2 , the stirring rate is 200r / min,...

Embodiment 2

[0075] The formula consists of the following:

[0076] Copper methanesulfonate: 220g / L;

[0077] Methanesulfonic acid: 60g / L;

[0078] Chloride ion: 50mg / L, mainly provided by one or more in copper chloride dihydrate, sodium chloride or hydrochloric acid;

[0079] Sodium polydisulfide dipropane sulfonate: 2mg / L;

[0080] Polyethylene glycol: 60mg / L;

[0081] Diphenylmethane dye: 60mg / L;

[0082] Solution preparation process: Take 1L solution as an example, take 300ml of water, add copper methanesulfonate: 220g; methanesulfonic acid: 60g, copper chloride dihydrate: 0.114g, sodium polydithiodipropanesulfonate: 0.002g ; Polyethylene glycol: 0.06g; Diphenylmethane dye: 0.06g, stir to dissolve, and then add water to the liquid level to 1L.

[0083] Process parameters for electroplating using the copper electroplating solution prepared in this example: pretreatment vacuuming: 5min, solution exchange time: 10min, temperature: 25±2°C, current density: 30A / dm 2 , the stirring rat...

Embodiment 3

[0086] The formula consists of the following:

[0087] Copper methanesulfonate: 240g / L;

[0088] Methanesulfonic acid: 50g / L;

[0089] Chloride ion: 40mg / L, mainly provided by one or more in copper chloride dihydrate, sodium chloride or hydrochloric acid;

[0090] Sodium polydisulfide dipropane sulfonate: 4mg / L;

[0091] Polyethylene glycol: 60mg / L;

[0092] Tobacco green: 70mg / L;

[0093]Solution preparation process: Take 1L solution as an example, take 300ml of water, add copper methanesulfonate: 240g; methanesulfonic acid: 50g, copper chloride dihydrate: 0.091g, sodium polydisulfide dipropanesulfonate: 0.004g ; Polyethylene glycol: 0.06g; Yanlu green: 0.07g, stir to dissolve, and then add water to the liquid level to 1L.

[0094] Process parameters for electroplating using the copper electroplating solution prepared in this example: pre-treatment vacuuming: 10 min, solution exchange time: 10 min, temperature: 30±2°C, current density: 25A / dm 2 , stirring rate 200r / min,...

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Abstract

The invention discloses an electroplating copper cylinder solution suitable for the oversize current density and an electroplating method. The electroplating copper cylinder solution comprises the following components by concentration: 150-240 g / L of copper methane sulfonate, 40-70 g / L of methanesulfonic acid, 30-50 mg / L of chloridion, 2-5 mg / L of bis-(sodium sulfopropyl)-disulfide, 40-100 mg / L ofpolyethylene glycol, 40-80 mg / L of Janus green, and the balance of DI pure water. The components are evenly mixed to form the electroplating copper cylinder solution suitable for the oversize currentdensity; before electroplating, a wafer needs to be subjected to vacuum treatment through a pretreatment solution; the pretreatment solution is the DI pure water, the wafer is mounted through an electroplating hanger, and then is vacuumized in vacuum equipment for 5-10 min through the DI pure water; and after vacuumizing, electroplating is conducted in the electroplating copper cylinder solution.According to the electroplating copper cylinder solution provided by the invention, the problem is completely solved, especially through adding of the Janus green, an additive is adsorbed on the surface of a seed layer, a copper cylinder is evenly electroplated on the surface of a substrate, and performance indexes that scorch is avoided, and the arch rate is less than or equal to 5% can be met.

Description

technical field [0001] The invention relates to the field of materials, in particular to an electroplating copper column solution and an electroplating method suitable for ultra-high current density. Background technique [0002] With the increasing number of external leads and the density of copper interconnection wires in IC chip packaging, the rapid development of high-density advanced packaging technologies such as flip-chip (Flip-Chip) and wafer-level packaging (WLP) has been promoted. Copper pillar bump (Cupillar) technology is a new generation of chip interconnection technology for the connection of chips and substrates in the integrated circuit packaging process. Copper pillar bumps benefit from the characteristics of copper material, which has superior electrical conductivity, thermal performance and reliability, and can meet RoHS requirements. At the same time, the use of copper pillar bump technology can reduce the number of substrate layers used in substrate des...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/38C25D7/12C25D21/10
CPCC25D3/38C25D7/12C25D21/10
Inventor 孙道豫姚吉豪黄雷
Owner 江苏矽智半导体科技有限公司
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