39results about How to "Uniform crystal size" patented technology

The present invention describes methods for preparing high quality nanoparticles, i.e., metal oxide based nanoparticles of uniform size and monodispersity. The nanoparticles advantageously comprise organic alkyl chain capping groups and are stable in air and in nonpolar solvents. The methods of the invention provide a simple and reproducible procedure for forming transition metal oxide nanocrystals, with yields over 80%. The highly crystalline and monodisperse nanocrystals are obtained directly without further size selection; particle size can be easily and fractionally increased by the methods. The resulting nanoparticles can exhibit magnetic and / or optical properties. These properties result from the methods used to prepare them. Also advantageously, the nanoparticles of this invention are well suited for use in a variety of industrial applications, including cosmetic and pharmaceutical formulations and compositions.

The embodiments described herein include one embodiment that provides a method for controlling sugar crystallization. The method includes, during a crystallization process, determining supersaturation of a sugar slurry of syrup and regulating influx of syrup into the sugar slurry to promote sugar crystallization in a closed-loop manner based upon the determined supersaturation.

The invention relates to the technical field of pharmaceutical preparations, and specifically discloses a preparation method of a tedizolid phosphate freeze-dried preparation for injection. The preparation method of the freeze-dried preparation of tedizolid phosphate for injection comprises the following steps: a. adding tedizolid phosphate and a freeze-drying protective agent to water for injection to obtain a tedizolid phosphate liquid; b. cooling the liquid in sequence To ‑8~‑10°C and ‑40~‑50°C, keep for a specific time; then heat up to ‑15~‑10°C, then cool to ‑40~‑50°C, keep for a specific time to obtain a freeze-dried product; c, Under vacuum conditions, the freeze-dried product is heated to -30--10°C and 40-50°C, and kept for a specific time to obtain a freeze-dried formulation of tedizolid phosphate for injection. The preparation method of the invention is simple to operate, significantly reduces the time cost for preparing the tedizolid phosphate lyophilized preparation for injection, and can obtain a high-quality tedizolid phosphate lyophilized preparation for injection with low impurities and moisture content.

Vacuum flash cooling continuous crystallization device, including raw material storage tank, raw material pump, self-evaporator, No. 1 vacuum crystallizer, No. 2 vacuum crystallizer, No. 3 vacuum crystallizer, hydrocyclone, slurry barrel, centrifuge, etc. It is characterized in that: the raw material storage tank is sequentially connected with a raw material pump, a self-evaporator, a No. 1 vacuum crystallizer, a No. 2 vacuum crystallizer, a No. 3 vacuum crystallizer, a hydrocyclone, a slurry tank, and a centrifuge. The top of the cooler is connected to the No. 1 surface cooler through a pipeline, the No. 1 surface cooler is connected to the No. 1 water ring vacuum pump through a pipeline, the No. No. 1 vacuum crystallizer slurry inlet, No. 1 vacuum crystallizer top is provided with a No. 1 steam jet vacuum pump. Compared with the batch crystallization, the comprehensive energy consumption of the present invention is 40% of that of the batch crystallization. Scar can be produced continuously for a long time.

The invention discloses a cyanide-free chemical gold-plating solution and a gold-plating process applied to the field of advanced packaging of wafers. 10-60g / L; conductive salt 10-60g / L; buffer 30-60g / L; anti-aging agent 5-10g / L; surfactant 15-80mg / L; wetting agent 1-5mg / L; reaction Accelerator 50-80mg / L; Stabilizer 0.2-5mg / L; The reaction accelerator is a compound of 2,6-diaminopyridine and 3-pyridinemethanol, and 2,6-diaminopyridine and 3-pyridine The mass concentration ratio of methanol is 2:1. The solution obtained by the invention not only ensures the stability of the plating solution, but also makes it easy to spread the plated parts on the surface of the electrode to achieve the purpose of uniform plating, and further achieves the effect of filling the micropores of the wafer package without voids and gaps.

The invention relates to a preparation method of a wear-resistant tungsten carbide alloy material, which belongs to the technical field of metallurgy. The present invention first uses expanded graphite as a template, mixes it with ammonium tungstate solution and starch, heats and evaporates, and crystallizes tungsten as ammonium paratungstate, and controls the crystallization particle size uniformly by the multi-hydroxyl hindrance of starch, so that thermally reduced tungsten is evenly attached to Expanded graphite surface, followed by sintering reaction to generate tungsten carbide layer on the expanded graphite surface, so as to obtain tungsten carbide powder with graphite interlayer structure, and finally blend and sinter tungsten carbide powder and other metal powders to finally obtain wear-resistant tungsten carbide alloy material , because the interlayer structure of tungsten carbide can slip along the interlayer of metal powder under the friction state, and move directionally along the friction direction, thereby reducing the consumption of internal energy of the cemented carbide material, reducing the wear of the cemented carbide material, and the layer The interstructure can also avoid the damage of the cemented carbide structure caused by repeated volume changes, thereby further improving the wear resistance.

The invention discloses a bruising method of 4A zeolite, which comprises the following steps: (A) allocating 300-500 wt soda and 600-900 wt alumina cement; mixing evenly; inputting into autoclave with 5000-8000 wt water; reacting 10-30 min; controlling temperature at 70-90 deg.c; getting sodium aluminate solution; (B) allocating 4-6 wt sodium aluminate solution, 1 wt liquid soluble glass with module at 2.9-3.2 and solid content at 20-30%; mixing; adding into crystal tank to crystal; adding 0.004-0.006 wt bruising agent; controlling temperature at 70-90 deg.c; reacting 20-30 min; discharging; allocating bulk factor at 1-3:1:0.001-0.003= (A) sodium aluminate solution : module at 2.9-3.2 and solid content at 20-30% soluble glass solution : anhydrous alcohol; mixing; heating-up to 70-80 deg.c; reacting 1-2 h; getting bruising agent; (C) filtering; discharging zeolite; (D) drying; storing or packing.

The present invention relates to a phosphine precursor for preparing a quantum dot and a quantum dot prepared therefrom. When the phosphine precursor for preparing a quantum dot, of the present invention, is used, a quantum dot having improved luminous efficiency and having higher luminous color purity can be provided.

The invention relates to an energy-saving crystallization device for high-concentration saline wastewater, which belongs to the technical field of environmental protection equipment. It mainly includes raw material storage tank, raw material pump, self-evaporator, No. 1 vacuum crystallizer, No. 2 vacuum crystallizer, No. 3 vacuum crystallizer, hydrocyclone, slurry tank, centrifuge, characterized in that: the raw material The storage tank is sequentially connected to the raw material pump, self-evaporator, No. 1 vacuum crystallizer, No. 2 vacuum crystallizer, No. 3 vacuum crystallizer, hydrocyclone, slurry bucket and centrifuge. The top of the self-evaporator is connected to a The No. 1 surface cooler and the No. 1 surface cooler are connected to the water ring vacuum pump through the pipeline, and the water ring vacuum pump is connected to the No. 1 steam-water separator through the pipeline, and the slurry outlet of the self-evaporator is connected to the No. 1 vacuum crystallizer slurry inlet through the pipeline. Compared with intermittent crystallization, the comprehensive energy consumption of the present invention is 30% of that of intermittent crystallization, and the grain size of the crystallization is uniform, the equipment structure is simple, no fouling, no scarring, long-term continuous production and the like.

The invention belongs to the technical field of graphene material synthesis and preparation and more particularly relates to a preparation method of a wafer level graphene micro-nano monocrystal array. The method comprises the steps of performing chemical vapor deposition on the surface of polycrystal copper foil in a mixed atmosphere containing methane and oxygen for growth to form the graphene micro-nano monocrystal array, wherein methane serves as a carbon source for graphene growth; the copper foil serves as a catalytical substrate for the graphene growth; and the oxygen serves as etchinggas in a formation process of the graphene monocrystal array. According to the method, a graphene array structure is directly prepared by a simple one-step chemical vapor deposition method; the disadvantage of complicated steps of complicated micro-nano machining, etching and the like required by a graphene film in a subsequent application is overcome; quick and low-cost preparation of a large area micro-nano graphene monocrystal is achieved; and the application in large-scale device preparation is facilitated.