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Cyanide-free chemical gold plating solution applied to advanced wafer packaging field and gold plating process thereof

A technology in the field of chemical gold plating, applied in the field of cyanide-free chemical gold plating solution and its gold plating process, can solve the problems of the development limitation of cyanide gold plating solution, the inability to achieve the effect of uniform plating, and the inability to achieve electroplating filling, etc., to ensure the crystallization size of the coating Consistent, accelerated activation reaction speed, perfect plating effect

Active Publication Date: 2021-06-25
SHENZHEN CHENGGONG CHEM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The earliest electroless gold plating used cyanide-containing gold salts as raw materials. Due to the highly toxic cyanide contained in the cyanide plating solution, there will be great unsafe factors in the actual production process and related follow-up wastewater, waste gas treatment and disposal. The development of cyanide gold plating solution is limited. With the improvement of people's awareness of environmental protection, more and more cyanide-free gold plating processes are now used in the process, but the existing cyanide-free gold plating process also has the following defects:
[0005] 1) Gold plating is prone to defects such as voids and cracks during electroplating, and it is impossible to achieve perfect and seamless electroplating filling, and it is still impossible to achieve the effect of uniform plating
[0006] 2) There is a certain gap between the current efficiency and stability of the existing plating solution, the corrosion resistance of the coating and the brightness of the appearance and the cyanide coating

Method used

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  • Cyanide-free chemical gold plating solution applied to advanced wafer packaging field and gold plating process thereof
  • Cyanide-free chemical gold plating solution applied to advanced wafer packaging field and gold plating process thereof
  • Cyanide-free chemical gold plating solution applied to advanced wafer packaging field and gold plating process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] A kind of cyanide-free chemical gold-plating solution, every 1 liter of described cyanide-free chemical gold-plating solution comprises following composition:

[0061]

[0062] Adjust the pH to 7.2 with sulfuric acid or potassium hydroxide;

[0063] The balance is water.

[0064] Operating temperature: 50°C.

[0065] Using the gold-plating solution prepared by this component, after using the gold-plating method to carry out cyanide-free gold-plating on wafer packaging products, the thickness of the gold finally obtained is 0.3 microns; using the solution and gold-plating process of the present invention, the whole process only needs 20 minutes to complete ; And the crystal size of the obtained gold-plated layer is consistent, without voids and cracks; the surface is smooth.

Embodiment 2

[0067] A kind of cyanide-free chemical gold immersion solution, every 1 liter of described cyanide-free chemical gold immersion solution comprises following composition:

[0068]

[0069] Adjust the pH to 8 with sulfuric acid or potassium hydroxide;

[0070] The balance is water.

[0071] Operating temperature: 60°C.

[0072] Using the gold plating solution prepared by this component, after using the gold plating method to carry out cyanide-free gold plating on wafer packaging products, the gold thickness is 0.2 microns; using the solution and gold plating process of the present invention, the whole process only needs 12 minutes to complete; and obtained The crystallization of the gold-plated layer is consistent in size, without voids or cracks; the surface is smooth.

Embodiment 3

[0074]

[0075]

[0076] Adjust the pH to 9 with sulfuric acid or potassium hydroxide;

[0077] The balance is water.

[0078] Operating temperature: 80°C.

[0079] Using the gold plating solution prepared by this component, after using the gold plating method to carry out cyanide-free gold plating on wafer packaging products, the gold thickness is 0.05 microns; using the solution and gold plating process of the present invention, the whole process only needs 2 minutes to complete; and obtained The crystallization of the gold-plated layer is consistent in size, without voids or cracks; the surface is smooth.

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Abstract

The invention discloses a cyanide-free chemical gold plating solution applied to the advanced wafer packaging field and a gold plating process thereof. The cyanide-free chemical gold plating solution is prepared from the following components: cyanide-free gold salt with the content of Au ions being 6-10 g / L, 10-60 g / L of a complexing agent, 10-60 g / L of conductive salt, 30-60 g / L of a buffer agent, 5-10 g / L of an anti-aging agent, 15-80 mg / L of an interfacial agent, 1-5 mg / L of a wetting agent, 50-80 mg / L of a reaction accelerator, and 0.2-5 mg / L of a stabilizer, wherein the reaction accelerator is a compound of 2,6-diaminopyridine and 3-pyridine methanol, and the mass concentration ratio of the 2,6-diaminopyridine to the 3-pyridine methanol is 2:1. The solution not only ensures the stability of the plating solution, but also enables a plated part to be easily spread on the surface of an electrode so as to achieve the purpose of uniform plating, and therefore the effect of void-free and seamless filling of wafer packaging micropores is further achieved.

Description

technical field [0001] The invention relates to the technical field of surface treatment, in particular to a cyanide-free chemical gold plating solution and a gold plating process applied in the field of advanced wafer packaging. Background technique [0002] The general orientation of wafer-level packaging is to perform most or all of the packaging and testing procedures directly on the wafer, and then cut it into a single component. Wafer-level packaging has a smaller package size and better electrical performance. At present, it is mainly used in various semiconductor products, and its demand mainly comes from the requirements of portable products for light, thin and small features. [0003] In the production process of wafer-level packaging products, when the copper lines are formed, other metals need to be formed on the copper lines to protect the copper lines and prevent oxidation. In addition, functions such as wire bonding and welding can be realized to form intercon...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/48C25D7/12C25D21/12
CPCC25D3/48C25D7/12C25D21/12
Inventor 洪学平姚吉豪
Owner SHENZHEN CHENGGONG CHEM
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