A method for preparing a wafer-level graphene micro-nano single crystal array
A graphene, micro-nano technology, applied in the directions of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of complex steps of graphene micro-nano single crystal array and cannot be prepared in a large area, and achieve good application prospects , less defects, high quality effect
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[0030] A method for preparing a graphene micro-nano single crystal array proposed by the present invention may specifically include the following steps:
[0031] (1) Pretreatment of copper foil: Soak the copper foil in a mixed solution of acetic acid, ethanol and deionized water with a volume ratio of 1:1:1 for 15 minutes, rinse it with deionized water, and then dry it with nitrogen; Commercially available single crystal copper foil or polycrystalline copper foil can be used as the copper foil.
[0032] (2) Heating of metal copper foil: put the cleaned and dried copper foil in a chemical vapor deposition system, pass in argon gas, raise the temperature to 1000-1030°C within 30-60 minutes, and then pass in hydrogen gas to make the hydrogen gas The volume fraction of the mixed gas in the system is 1.8-2.1%, and the temperature is continued to rise to 1050-1070° C., and the temperature range is maintained for 10-30 minutes.
[0033] (3) direct growth of graphene single crystal a...
Embodiment 2
[0045] (1) The size of 3 pieces is 9*9cm 2 Copper foil with a thickness of 100 microns is soaked in a mixed solution of acetic acid, ethanol and deionized water with a volume ratio of 1:1:1 for 15 minutes, rinsed with deionized water, and then blown dry with nitrogen.
[0046] (2) Put the cleaned 3 pieces of copper foil into the chemical vapor deposition system, feed 500 sccm argon gas to remove the air, heat up to 1030°C within 40 minutes, then feed high-purity hydrogen gas with a flow rate of 10 sccm, and continue to heat up to 1070°C and keep the temperature constant for 10 minutes.
[0047] (3) keep temperature and argon, hydrogen flow constant, continue to feed 5 sccm concentration in chemical vapor deposition system and be 2% methane, and feed 2-4 sccm concentration respectively and be 0.1% oxygen, under normal pressure condition After 5 hours of growth, the temperature was lowered to room temperature, each gas mixture was turned off, and three pieces of copper foils af...
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