A method for preparing a wafer-level graphene micro-nano single crystal array

A graphene, micro-nano technology, applied in the directions of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of complex steps of graphene micro-nano single crystal array and cannot be prepared in a large area, and achieve good application prospects , less defects, high quality effect

Inactive Publication Date: 2020-01-10
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

[0004] In view of the above defects or improvement needs of the prior art, the present invention provides a method for preparing a wafer-level graphene micro-nano single crystal array, the purpose of which is to realize the one-step vapor deposition process by controlling the atmosphere in the chemical vapor deposition process. method, naturally formed large-area such as wafer-level graphene micro-nano single-crystal array preparation method, thereby solving the technical problems of the prior art for preparing graphene micro-nano single-crystal arrays with complex steps and incapable of large-scale preparation.

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  • A method for preparing a wafer-level graphene micro-nano single crystal array

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[0030] A method for preparing a graphene micro-nano single crystal array proposed by the present invention may specifically include the following steps:

[0031] (1) Pretreatment of copper foil: Soak the copper foil in a mixed solution of acetic acid, ethanol and deionized water with a volume ratio of 1:1:1 for 15 minutes, rinse it with deionized water, and then dry it with nitrogen; Commercially available single crystal copper foil or polycrystalline copper foil can be used as the copper foil.

[0032] (2) Heating of metal copper foil: put the cleaned and dried copper foil in a chemical vapor deposition system, pass in argon gas, raise the temperature to 1000-1030°C within 30-60 minutes, and then pass in hydrogen gas to make the hydrogen gas The volume fraction of the mixed gas in the system is 1.8-2.1%, and the temperature is continued to rise to 1050-1070° C., and the temperature range is maintained for 10-30 minutes.

[0033] (3) direct growth of graphene single crystal a...

Embodiment 2

[0045] (1) The size of 3 pieces is 9*9cm 2 Copper foil with a thickness of 100 microns is soaked in a mixed solution of acetic acid, ethanol and deionized water with a volume ratio of 1:1:1 for 15 minutes, rinsed with deionized water, and then blown dry with nitrogen.

[0046] (2) Put the cleaned 3 pieces of copper foil into the chemical vapor deposition system, feed 500 sccm argon gas to remove the air, heat up to 1030°C within 40 minutes, then feed high-purity hydrogen gas with a flow rate of 10 sccm, and continue to heat up to 1070°C and keep the temperature constant for 10 minutes.

[0047] (3) keep temperature and argon, hydrogen flow constant, continue to feed 5 sccm concentration in chemical vapor deposition system and be 2% methane, and feed 2-4 sccm concentration respectively and be 0.1% oxygen, under normal pressure condition After 5 hours of growth, the temperature was lowered to room temperature, each gas mixture was turned off, and three pieces of copper foils af...

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Abstract

The invention belongs to the technical field of graphene material synthesis and preparation and more particularly relates to a preparation method of a wafer level graphene micro-nano monocrystal array. The method comprises the steps of performing chemical vapor deposition on the surface of polycrystal copper foil in a mixed atmosphere containing methane and oxygen for growth to form the graphene micro-nano monocrystal array, wherein methane serves as a carbon source for graphene growth; the copper foil serves as a catalytical substrate for the graphene growth; and the oxygen serves as etchinggas in a formation process of the graphene monocrystal array. According to the method, a graphene array structure is directly prepared by a simple one-step chemical vapor deposition method; the disadvantage of complicated steps of complicated micro-nano machining, etching and the like required by a graphene film in a subsequent application is overcome; quick and low-cost preparation of a large area micro-nano graphene monocrystal is achieved; and the application in large-scale device preparation is facilitated.

Description

technical field [0001] The invention belongs to the technical field of synthesis and preparation of graphene materials, and more specifically relates to a method for preparing a wafer-level graphene micro-nano single crystal array. Background technique [0002] Since single-layer graphene was first peeled off in 2004, related research has reached unprecedented heights, and its excellent photoelectric, mechanical, and chemical properties make it a functional material with broad prospects. Currently, chemical vapor deposition is the most effective method for large-scale preparation of single-layer high-quality graphene, resulting in a continuous thin film. Generally speaking, to realize the practical application of graphene in devices, it is necessary to process graphene into a specific integrated structure at the micro-nano scale. These steps often rely on artificially designed micro-nano processing and etching technologies, which will bring many cumbersome post-processing s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/02C30B25/16
CPCC30B25/165C30B29/02
Inventor 王帅郭巍池凯
Owner HUAZHONG UNIV OF SCI & TECH
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