284results about How to "Crystallize fast" patented technology

The present invention can promote the large capacity, high performance and high reliability of a semiconductor memory device by realizing high-performance of both the semiconductor device and a memory device when the semiconductor memory device is manufactured by stacking a memory device such as ReRAM or the phase change memory and the semiconductor device. After a polysilicon forming a selection device is deposited in an amorphous state at a low temperature, the crystallization of the polysilicon and the activation of impurities are briefly performed with heat treatment by laser annealing. When laser annealing is performed, the recording material located below the silicon subjected to the crystallization is completely covered with a metal film or with the metal film and an insulating film, thereby making it possible to suppress a temperature increase at the time of performing the annealing and to reduce the thermal load of the recording material.

Blends of at least two polymers incorporating propylene-derived units and processes for producing such blends are provided. The first polymer of the blend is a low crystallinity polymer including propylene-derived units. The second polymer is a high crystallinity polymer including propylene-derived units. The polymer blends exhibit the beneficial performance characteristics of low crystallinity propylene polymers while minimizing certain processing and handling problems associated with low crystallinity propylene polymers. Low crystallinity propylene polymer pellets often exhibit a tendency to agglomerate because of the softness of such particles. Agglomeration of the pellets creates problems in handling and processing the particles. The polymer blends disclosed reduce the tendency of polymer pellets to agglomerate while maintaining the desirable physical properties, such as elastomeric properties, exhibited by low crystallinity propylene polymers. Various processes for producing the polymer blends are also provided.

A gypsum wallboard core, and methods and apparatus for making the same are disclosed. Methods of making a gypsum wallboard core include extruding a gypsum slurry containing water, gypsum, slip agents, water-reducing agents, surfactants and, optional additives, through a die and onto a substantially flat, smooth, moving surface. The die has provisions at its outer sides for the introduction of slip agents into the slurry, and provisions at its lateral outer edges for the introduction of a strength-enhancing agent. Once extruded onto the conveyor belt, the slurry is chemically-activated to set and form a hardened board core which then may be easily removed from the conveyor belt and dried.

The invention relates to a water-soluble polyester for textile size and a preparation method of the water-soluble polyester. The water-soluble polyester disclosed by the invention uses terephthalic acid and ethylene glycol to constitute a main repeating unit, namely ethylene terephthalate, and contains phthalate-5-sulphonate or a derivative thereof accounting for 8-20% of the mole number of the terephthalic acid, and calculated by the weight of the terephthalic acid, 3-20% of polyethylene glycol, 0.03-0.3% of acetate and 0.001-0.03% of inorganic nanoparticles are added. The intrinsic viscosity of the water-soluble polyester is 0.25-52dL/g, and the glass transition temperature is 35-55 DEG C. The water-soluble polyester can prevent adhesion during crushing and meet the requirements of continuous production; and the obtained product can be sized under moist environmental conditions in summer, and sized fiber fabric can be desized thoroughly.

A method for forming polycrystalline semiconductor film from amorphous semiconductor film at reduced temperatures and/or accelerated rates. The inclusion of a small percentage of semiconductor material, such as 2% within the metal layer, reduces the temperatures required for crystallization of the amorphous semiconductor by at least 50° C. in comparison to the use of the metal layer without the small percentage of semiconductor material. During a low temperature isothermal annealing process adjacent Al-2% Si and a-Si films undergo a layer exchange resulting in formation of a continuous polycrystalline silicon film having good physical and electrical properties. Formation of polycrystalline-semiconductor in this manner is suitable for use with low temperature substrates (e.g., glass, plastic) as well as with numerous integrated circuit and MEMs fabrication devices and practices.

An aqueous ink containing at least a water-dispersible coloring material and a water-soluble crystalline component, characterized in that the water-dispersible coloring material forms an aggregate around a crystal of the crystalline component formed as the content of the aqueous ink decreases, which ink may further contain a water-soluble coloring material.

A high-lustre polypropylene material and its production are disclosed. The material consists of polypropylene resin 100 proportion, filler nanometer calcium carbonate 25-35 proportion, dispersant 0.5-1.5 proportion, cross-linking agent diisopropylzene 0.1-0.5 proportion, beta-crystal nucleation agent 0.1-0.5 proportion, and antioxidant 0.1-0.5 proportion. It costs low, has better toughness and surface brightness on surface.

Disclosed is a method for annealing a silicon thin film in a substrate in which an insulation layer and the silicon thin film are subsequently formed. The method includes heating or preheating the silicon thin film within a temperature range at which the substrate is not transformed during the process so as to generate an intrinsic carrier therein, thereby lowering a resistance to a value at which Joule heating is possible; and applying an electric field to the preheated silicon thin film so as to induce Joule heating by means of movement of the carrier, thereby conducting crystallization, eliminating crystal defects, and ensuring crystal growth. When using the method, Joule heating is selectively induced to a-Si thin film, a-Si/Poly-Si thin film or a Poly-Si thin film according to the preheating condition, thereby making a Poly-Si thin film of good quality within a very short time without damaging the substrate.

The invention discloses poly(monothiocarbonic ester) containing crystals and a preparation method of poly(monothiocarbonic ester), and belongs to the field of polymer materials. The method includes the steps of adding carbon oxysulfide, oxetane, third monomer, chain transfer agent, catalyst and promoter into a dry high-pressure reaction still, conducting copolymerization reaction for 0.5-24 hours on a body or a solution under the self-generated pressure at a temperature of 0-150 DEG C, and conducting purifying and drying to obtain poly(monothiocarbonic ester) containing crystals. Prepared poly(monothiocarbonic ester) containing crystals contains sphero-crystal structures in the crystals and has the crystallinity of 13-85%, the crystallization temperature of 60-110 DEG C, the melting temperature of 100-135 DEG C and the melting enthalpy value of 4-90 J/g. By means of the method, oxygen-sulfur exchange reaction is completely restrained at high polymerization temperature, poly(monothiocarbonic ester) clear in structure and adjustable in crystallization property is obtained, and poly(monothiocarbonic ester) has a degradable thiocarbonic ester structure, can crystallize like high density polyethylene, has a wide processing window and has high strength and toughness.

The present invention relates to methods and apparatus for promoting rapid formation of biomolecule crystals from a solution of biomolecules, preferably proteins, wherein the protein solution undergoes rapid concentration according to its isoelectric point in an electric field. Protein crystallization according to the methods of the present invention takes place within a period of hours or less.

The invention discloses a method for recycling phosphorus from sewage through bioelectrochemical struvite crystallization. The method aims to solve the problems that in existing recycling of phosphorus from sewage through bioelectrochemical struvite crystallization, an anode liquid is acidized, the overpotential is large, the magnesium source cost is high, and the like. Cheap magnesium ores are subjected to acidolysis in the anode liquid, acidification of the anode liquid is prevented, the overpotential is remarkably reduced, and the magnesium source cost is lowered. According to the method, based on a bichamber microbial electrolysis pool, under an extremely low externally applied voltage (0.3-1.2 V), an electrode reaction is performed to form conditions for acidification of the anode liquid and acidification of a cathode liquid; the crushed magnesium ores are added to an anode chamber, acidification of the anode liquid is prevented, the pH of the anode liquid is stabilized, and microorganisms are promoted to continuously degrade organic matter to generate power; and magnesium ions released through acidolysis of the magnesian cores move to an cathode through a cation exchange membrane under the drive of the electric filed force and has a crystallization reaction with ammonium radials and phosphate radicals under an alkaline condition, struvite deposits are formed, the pH of the cathode liquid is stabilized, and the purposes of removing and recycling the phosphorus from sewage are realized.

A device and method for producing Ga doped silicone single crystal with a diameter between 150 and 165 mm and a narrow resistivity distribution range (from 3 Ω·cm to 0.5 Ω·cm). The device is characterized by the use of a shorter heater and a funnel shaped gas flow guide capable of blowing an inert gas such as Ar straight to the crystallization frontier at the interface between outer surface of the nascent single crystal ingot and the surface of the melt of polycrystalline silicone raw materials in a quartz crucible.