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Method for forming metal oxide on surface of substrate

A technology of oxide film and thin film, which is applied in metal material coating process, gaseous chemical plating, ion implantation plating, etc., can solve problems such as the deterioration of dielectric constant and electrical characteristics, and achieve shortened process time, good interface, and crystal size consistent effect

Inactive Publication Date: 2005-01-26
ANELVA CORP
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Problems solved by technology

[0007] However, as the above-mentioned metal oxide film, for example, as a method of forming a high dielectric constant capacitive insulating film, when the CVD method is used, since the vaporized organic liquid raw material is used as the raw material gas of this CVD method , so carbon (C) derived from hydrocarbon groups such as methyl and ethyl contained in the raw material gas is easily absorbed as an intermediate product
In addition, for the CVD method of continuous lamination after directly mixing the oxidizing gas and the raw material gas, due to the deposition of the reactive components in the gas phase, it is easy to form a thin film with insufficient oxygen from the stoichiometric point of view, resulting in the generation of dielectric The problem of deterioration of electrical characteristics such as constants

Method used

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  • Method for forming metal oxide on surface of substrate
  • Method for forming metal oxide on surface of substrate
  • Method for forming metal oxide on surface of substrate

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Embodiment Construction

[0053] figure 1 The inside of the vacuum chamber of the thin film forming apparatus used for the thin film forming method of this invention is shown.

[0054] Such as figure 1 As shown, the inside of the vacuum container 12 is divided into a plasma generation space 15 and a film formation processing space 16 by a partition plate 14 . The plasma generation space 15 and the film formation processing space 16 communicate only through a plurality of through holes 25 formed in the partition plate 14 .

[0055] exist figure 1 In the illustrated embodiment, the vacuum container 12 is composed of an upper container 12a forming the plasma generation space 15 and a lower container 12b forming the film formation processing space 16 from the viewpoint of good assembly. When the vacuum container 12 is produced by closing the upper container 12a and the lower container 12b, a partition plate 14 is provided at a position therebetween. The plasma generation space 15 is formed by the parti...

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Abstract

A film-forming method includes the steps of introducing oxygen radicals and an organic raw material gas containing a metal element into a vacuum container, and reacting the organic raw material gas with the oxygen radicals, thereby forming a metal oxide film on a surface of a substrate disposed in the vacuum container.

Description

technical field [0001] The present invention relates to a method for forming a thin film of a semiconductor device, and more specifically, to a method for forming a thin film of a semiconductor device in which a metal oxide film is formed on the surface of a semiconductor substrate such as a silicon substrate. Background technique [0002] HfO 2 It is a metal oxide that stands out for its high dielectric constant. as HfO 2 A method of forming such an insulating thin film with high dielectric constant capacity has been extensively studied because a chemical vapor deposition method (hereinafter referred to as CVD method) can form a thin film having excellent step coverage characteristics. [0003] For example, in the manufacturing method of ultra-large LSI semiconductor devices such as DRAM (Dynamic Random Access Memory) in Japanese Unexamined Publication No. 11-163282, a method has been proposed in which the lower electrode after forming a surface polysilicon thin film on a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/24C23C16/40C23C16/44C23C16/455C23C16/509H01L21/31H01L21/316
CPCC23C16/45514C23C16/40C23C16/45574C23C16/45565C23C16/5096C23C16/405C23C16/455
Inventor 熊谷晃张宏
Owner ANELVA CORP
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