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A nexfet bypass switch based on photovoltaic application

A bypass switch, photovoltaic technology, applied in the semiconductor field, can solve the problems of overheating, damage and leakage of shadow cells, and achieve the effects of stable characteristics, long life and low power consumption

Active Publication Date: 2019-04-12
CHONGQING ZHONGKE YUXIN ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This phenomenon is called a "hot spot" and can lead to overheating of the shaded cell and, in some cases, even permanent damage leading to electrical leakage

Method used

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  • A nexfet bypass switch based on photovoltaic application
  • A nexfet bypass switch based on photovoltaic application
  • A nexfet bypass switch based on photovoltaic application

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Embodiment Construction

[0018] The present invention will be further described below in conjunction with the accompanying drawings and embodiments, but it should not be understood that the scope of the subject matter of the present invention is limited to the following embodiments. Without departing from the above-mentioned technical ideas of the present invention, various replacements and changes made according to common technical knowledge and conventional means in this field shall be included in the protection scope of the present invention.

[0019] The technical solution of the present invention will be further described in detail through the process below.

[0020] The invention provides a circuit structure composed of one N-channel NEXFET, a drive control module and a capacitor. The capacitor and the drive circuit control the gate drive of the NEXFET, and the circuit has the function of a bypass switch. The structure described above is fabricated on a piece of n-type single crystal silicon, wh...

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Abstract

Disclosed in the invention is a photovoltaic-application-based NEXFET bypass switch formed by an N-channel NEXFET having an ultra-low conduction drop, a drive control module, and a capacitor. The NEXFET serves as a core part. A C+ terminal of the drive control module is connected with a positive terminal of the capacitor, a G terminal is connected with a grid electrode of the NEXFET, a D- terminal is connected an anode of the NEXFET, and a D+ terminal is connected with a cathode of the NEXFET. The circuit has a bypass switch capacity. The basic working principle of the bypass switch is similar to that of a Schottky diode; the capacitor and the drive control module are used for realizing drive controlling of the NEXFET; and a power NEXFET device is used as a bypass switch of a photovoltaic battery cell. When a hotspot occurs in the photovoltaic battery cell, a current flows through the bypass switch without any blocking; and the bypass switch does not work under the normal situation. According to the invention, the bypass diode has the ultra low conduction drop; the reverse leakage current and the power consumption are extremely low; the temperature characteristic is better; the service life is prolonged; and characteristics are stable.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a semiconductor device and a manufacturing process, in particular to designing a NEXFET bypass switch based on photovoltaic applications. Background technique [0002] With the widespread application of solar energy, solar energy related industries such as photovoltaic cells have developed rapidly. The photovoltaic panel is composed of a series of photovoltaic cells. Under optimal conditions, all cells are equally irradiated and exposed to the same current level. However, some battery cells may be partially shaded or obscured under normal operation. These shadowed cells limit current generation compared to fully irradiated cells, and in extreme cases, these cells are completely shaded and the current is blocked. In this case, the shaded cell is like a load, and the current generated by the irradiated cell causes an overvoltage, whose value can fully reach the breakdown ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/74H01L31/042
CPCY02E10/50
Inventor 刘建刘青税国华张剑乔
Owner CHONGQING ZHONGKE YUXIN ELECTRONICS