Block copolymer and method and application for forming microphase separation perpendicular phase domain structure

Abstract

The invention relates to a block copolymer. The block copolymer is a type-AB diblock copolymer or a type-ABA or type-BAB triblock copolymer. The block copolymer A is polycarbonate formed by alternating copolymerization of carbon dioxide and alkyleneoxide. The number-average molecular weight of the polycarbonate ranges from 500 to 300000, the unit content of the polycarbonate is 30-100%, the content of polyether generated by homopolymerization of the alkyleneoxide is 0-70%, and the molecular weight ranges from 1.00 to 2.00; the number-average molecular weight of the block copolymer B ranges from 500 to 300000, and the molecular weight is distributed between 1.00 to 2.00. The invention further relates to a method for forming a microphase separation perpendicular phase domain structure and application of the block copolymer under the directed self-assembly technology. The block copolymer forms a perpendicular phase domain structure penetrating through the whole film thickness on the thermal annealing condition, regularly-arranged nano-patterns are formed through directed assembling, and the technical requirement that the half section of the next generation in the semiconductor industry is smaller than 11 nanometers is met.

Description

technical field [0001] The invention relates to the field of block copolymers, in particular to a block copolymer and a method and application for forming a microphase-separated vertical domain structure. Background technique [0002] Since the first computer was born at the University of Pennsylvania in 1946, the computer has changed from a mysterious and inaccessible behemoth to an indispensable tool in people's work and life today, mainly due to the fast processing speed of computer semiconductor chips. Increase. The processing speed of a computer chip depends on the number of integrated transistors per unit area. As the number of transistors per unit area increases, the computing speed of the computer becomes faster and faster. During this period, the development speed of computers has always followed Moore's Law, which is regarded as the standard in the semiconductor industry: the number of transistors and resistors integrated on a semiconductor chip doubles every 18-2...

AI Technical Summary

Problems solved by technology

Although ITRS predicts that PS-b-PMMA is the block polymer most likely to achieve industrialization, PS-b-PMMA is a weakly phase-separated polymer (χ≈0.037, 150°C), so PS-b-PMMA can only Fabrication of structures ≥12nm cannot meet the technical requirements of the next generation half-pitch <11nm

[0005] So far, although scientists have synthesized hundreds of block copolymers with high χ value, such as polystyrene-poly2-vinylpyridine (PS-b-P2VP, Adv. Mater. 2015, 27, 4364), Polystyrene-poly-4-vinylpyridine (PS-b-P4VP, χ≈0.4, 150°C, Macromolecules, 2007, 40, 2109), polystyrene-polyethylene glycol (PS-b-PEO, χ≈ 0.047, 150℃, Macromolecules, 2003, 36, 782), polystyrene-polylactide (PS-b-PLA, χ≈0.075, 150℃, JACS, 2002, 124, 12761), polystyrene-poly Methylsiloxane (PS-b-PDMS, χ≈0.11, 150°C, Macromolecules, 2013, 5399), but none of these block copolymers can satisfy the thermal annealing process favored by industry

This is mainly due to the fact that the currently designed high χ value block copolymers have too much difference in surface free energy between the two phases, and surface infiltration occurs, forming a phase domain structure parallel to the substrate (such as attached figure 2 ), this parallel structure is not conducive to the later pattern transfer

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