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MEMS device, preparation method for same, electronic device

A technology of electronic devices and MEMS patterns, which is applied in the manufacture of microstructure devices, microstructure devices, semiconductor/solid-state device components, etc., and can solve problems such as yield loss

Active Publication Date: 2016-07-06
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the field of MEMS, the working principle of the MEMS device is that the movement of the oscillating membrane (Membrane) produces a change in capacitance, and the calculation and work are performed by using the change in capacitance. To carry out the process to form functional devices, in the current MEMS device manufacturing process, in order to protect the devices on the front of the wafer, the method of adding tape (tape) is often adopted, but in the process of removing the tape (tape), it is often found that the MEMS device directly Sticking away by the stickiness of the tape (tape), resulting in a loss of yield (Yield)

Method used

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  • MEMS device, preparation method for same, electronic device
  • MEMS device, preparation method for same, electronic device
  • MEMS device, preparation method for same, electronic device

Examples

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Embodiment 1

[0040] In order to solve the problems existing in the prior art, the present invention provides a kind of preparation method of MEMS device, below in conjunction with attached Figures 2a-2g The method is described further.

[0041]Firstly, step 201 is performed, a MEMS wafer 201 is provided, and grooves 20 are formed on the front surface of the MEMS wafer 201 .

[0042] Specifically, such as Figure 2a As shown, wherein the MEMS wafer 201 includes at least a semiconductor substrate, and the semiconductor substrate can be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI) ), silicon germanium on insulator (S-SiGeOI), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc. Active regions may be defined on the semiconductor substrate.

[0043] Forming the groove 20 on the front side of the MEMS wafer 201, the specific forming method includes but not limited to: patterning the MEMS wafer to fo...

Embodiment 2

[0069] The present invention also provides a MEMS device, the MEMS device is prepared by the method in Example 1, the MEMS device prepared by the method will not have a pattern missing, which further improves the performance of the MEMS device and yield.

Embodiment 3

[0071] The present invention also provides an electronic device, including the MEMS device described in Embodiment 2. Wherein, the semiconductor device is the MEMS device described in Example 2, or the MEMS device obtained according to the preparation method described in Example 1.

[0072] The electronic device of this embodiment can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV set, VCD, DVD, navigator, camera, video recorder, voice recorder, MP3, MP4, PSP, etc. , can also be any intermediate product including the MEMS device. The electronic device of the embodiment of the present invention has better performance due to the use of the above-mentioned MEMS device.

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Abstract

The invention relates to an MEMS device, a preparation method for the same, and an electronic device. The method comprises the steps that at the step S1, an MEMS wafer is provided, and a groove is formed in the front face of the MEMS wafer; at the step S2, an MEMS pattern is formed in the groove; at the step S3, a protective layer is formed on the front face of the MEMS wafer, so that a cavity containing the MEMS pattern is obtained; and at the step S4, the MEMS water is inverted, and back face technologies are executed. The method provided by the invention is characterized in that during removal of an adhesive tape, the MEMS pattern is not influenced; a Damage phenomenon of the MEMS device generated in a Detape technology is improved; and performance and a yield rate of the MEMS device are increased.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular, the invention relates to a MEMS device, a preparation method thereof, and an electronic device. Background technique [0002] With the continuous development of semiconductor technology, smart phones, integrated CMOS and micro-electromechanical systems (MEMS) devices have increasingly become the most mainstream and advanced technologies in the market for sensor (motion sensor) products, and with technology updates, this The development direction of similar transmission sensor products is smaller size, high-quality electrical performance and lower loss. [0003] Among them, MEMS sensors are widely used in automotive electronics: such as TPMS, engine oil pressure sensor, air pressure sensor of automobile brake system, automobile engine intake manifold pressure sensor (TMAP), common rail pressure sensor of diesel engine; consumer electronics: such as tire pressure gauge , sphygmomanomet...

Claims

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Application Information

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IPC IPC(8): B81B7/02B81C1/00
Inventor 郑超
Owner SEMICON MFG INT (SHANGHAI) CORP