Method for controlling corrosion depth of porous silicon

A technology of etching depth and porous silicon, applied in the field of porous silicon materials, can solve the problem of not providing a method with universal applicability, and achieve the effect of saving the use of chemical reagents, reducing the impact on the environment, and shortening the research period

Inactive Publication Date: 2016-07-13
XIAMEN UNIV
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  • Abstract
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Problems solved by technology

At present, the influence of corrosion current on the thickness of porous silicon layer has been mentioned in many patents and literatures, but no method with general applicability has been given.

Method used

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  • Method for controlling corrosion depth of porous silicon
  • Method for controlling corrosion depth of porous silicon
  • Method for controlling corrosion depth of porous silicon

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Embodiment Construction

[0024] see figure 1 Place the silicon sample 4 sputtered with an aluminum film on the non-polished surface between the copper base 3 and the electrolytic cell 6, the copper base 3 is connected to the positive pole of the DC power supply 2, insert the platinum sheet 7 into the electrolyte, and connect it to the DC power supply 2 In order to ensure the tightness, there is a groove at the bottom of the electrolytic cell 6, and the rubber ring 5 is put into the groove. After pouring the electrolyte solution into the electrolytic cell 6, turn on the DC power supply 2. After 5 minutes, pour out the electrolyte solution, take out the sample, rinse it with absolute ethanol for 5 times, put it in a vacuum oven, and bake it at a low temperature of 80°C for 12 hours , and finally prepare the sample, observe the cross-section of the porous silicon by SEM and analyze it by EDX, so as to obtain the thickness of the porous silicon.

[0025] In this embodiment, the SEM images of the cross-se...

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Abstract

The invention discloses a method for controlling the corrosion depth of porous silicon and relates to a porous silicon material. The method comprises the following steps: 1) putting a silicon wafer into a H2SO4-H2O2 mixed solution and heating; taking out the silicon wafer and repeatedly flushing by hot water and then cold water; putting the silicon wafer in a HF-H2O mixed solution and shaking; removing residual oxide on the surface of the silicon wafer; and taking out the silicon wafer and flushing and drying by blowing; 2) performing magnetron sputtering of an Al film on the non-polished surface of the silicon wafer obtained in the step 1), wherein the Al film is connected with the anode of a direct-current power supply; 3) enabling the surface of the Al film obtained in the step 2) to be contact with the bottom of an electrolytic cell so as to connect the anode of the direct-current power supply, and inserting metal platinum into the electrolyte as a cathode, wherein porous silicon is obtained after corrosion; and 4) flushing the sample obtained in the step 3), and drying to obtain porous silicon.

Description

technical field [0001] The invention relates to porous silicon materials, in particular to a method for controlling the corrosion depth of porous silicon. Background technique [0002] Porous silicon is a new type of one-dimensional nanophotonic crystal material with a pore size ranging from nanometers to millimeters. Due to its huge surface-to-surface ratio, good biocompatibility and unique optical properties, it is widely used in biological and chemical sensors, photocatalysis , energy, supercapacitors, bioimaging, drug delivery and other fields have great application prospects. [0003] At present, the most basic method for preparing porous silicon is the constant current anode electrochemical corrosion method, which uses a single crystal silicon wafer as an anode and a platinum wafer as a cathode, and conducts constant current oxidation in a corrosion solution of hydrofluoric acid and absolute ethanol to form Porous silicon technology can effectively control the pore si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25F3/12
CPCC25F3/12
Inventor 郑金成付攀
Owner XIAMEN UNIV
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