Method for metalizing back face of ITO target material

Abstract

The invention relates to a method for metalizing a back face of an ITO target material. According to the method, the target material is cleaned, the part which does not need to be metalized is covered with a heat-resisting thin film, and put on a normal-temperature heating table, the face required to be metalized is upward, the temperature of the heating table rises to 200 DEG C to 230 DEG C, the temperature of the face, required to be metalized, of the target material ranges from 170 DEG C to 180 DEG C, an indium material is placed on the to-be-metalized face of the target material, and after the indium material is melted, the to-be-metalized face is evenly painted through a copper brush, and an ultrasonic indium coating machine is used for carrying out uniform coating for 2 times to 4 times; redundant indium materials are scraped by a scraping plate to be removed; temperature is naturally reduced, the target material is taken out of the heating table, the thin film is removed, and target material metalizing is completed; and according to the method, the simple heating table is adopted to be matched with the ultrasonic indium coating machine to achieve operation, back face metallization of the ITO target material can be simply and efficiently completed, and the method has the beneficial effects that expensive equipment is not needed, operation is simple, efficient and free of pollution, large-area metalizing can be carried out, the cost is low, and the method is suitable for large-batch production.

Description

technical field [0001] The invention relates to a backside metallization method of an indium tin oxide (ITO) target material used for magnetron sputtering coating. Background technique [0002] The ITO target is the raw material for the ITO transparent conductive film to be plated by magnetron sputtering. As a transparent conductive film with excellent performance, ITO film is widely used in industries such as flat panel displays, touch screens, solar cells, and LEDs. When the ITO target is installed and used, it is welded with a back plate (usually a copper plate). This process is called bonding in the industry. In order to avoid the introduction of impurities during coating, the commonly used solder is metal indium. At the same time, in order to make the ceramic material of the ITO target and the metal back plate firmly welded together, a layer of metal indium is usually plated on the back of the ITO target. This process is called target metallization in the industry. ...

AI Technical Summary

Problems solved by technology

[0003] The metallization of ITO targets includes conventional vapor phase evaporation, magnetron sputtering, and the ion deposition method disclosed in Chinese patent CN103031524A. These methods require expensive coating equipment, and the area that can be metallized is limited by the size of the equipment.

Chinese patent CN101705501A discloses a method for metallizing the back of an ITO target by electrolysis. The electrolysis method not only produces a lot of pollution, but also has voids in the metallization layer, which affects the subsequent brazing effect.