Preparation method of quantum dot film

A technology of thin film preparation and quantum dots, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of high technical requirements, quantum dot damage, failure to protect quantum dots, etc., and achieve the preparation process Simple and convenient, reduce production cost, reduce the effect of technical requirements

Active Publication Date: 2016-07-20
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

The emission spectrum of quantum dots can be controlled by changing the size of the quantum dots. It has good photostability, wide excitation spectrum and narrow emission spectrum. It has a wide range of applications in the fields of solar cells, light-emitting devices, and optical biomarkers. However, because quantum dots are easily destroyed by water or oxygen in the air, they lose their luminous properties
[0003] In order to solve the above problems, the current method is to coat the quantum dot material on the organic film PET, and then deposit a passivation protective film on the organic film PET to prevent the entry of water and oxygen, thereby protecting the quantum dots, but This requires the water permeability and oxygen permeability of the protective film to reach 10 -5 However, when preparing large-area PET films, it is difficult to achieve the required 10 even using SALD technology -5 order of magnitude, this method has high technical requirements, which greatly increases the preparation cost of the quantum dot film, and at the same time makes the passivation film uneven, and even some parts have no film, which cannot achieve the effect of protecting quantum dots
Therefore, the traditional quantum dot film preparation method is not suitable for large and wide PET films.

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  • Preparation method of quantum dot film

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preparation example Construction

[0038] Such as figure 1 As shown, a method for preparing a quantum dot film provided by the embodiment of the present invention mainly includes three steps: coating of quantum dots, preparation of quantum dot film and coating of quantum dot film. One-time coating, through the coating of quantum dots to ensure that the quantum dots are not oxidized, then coat the coated quantum dots into the film, and finally coat the film coated with quantum dots again, through the graded coating way, to overcome the water / oxygen transmission rate directly coated with a layer of protective film on the quantum dot powder cannot reach 10 -5 A matter of magnitude.

[0039] Each step will be described in detail below.

[0040] 1) Coating of quantum dots: use atomic layer deposition technology to deposit nanometer or submicron thickness metal oxide films on the surface of quantum dots, such as zinc oxide, aluminum oxide, titanium oxide, and coat quantum dots to ensure that quantum dots do not Ox...

Embodiment 1

[0078] This embodiment takes the preparation of aluminum oxide film as an example to further illustrate the preparation method of the present invention, which includes the following steps:

[0079] 1) Quantum dot coating

[0080] 1.1) Spread 3g of quantum dots on the filter screen of the powder holder, then put the powder holder into the cavity of the atomic layer deposition reactor, cover the cavity, ensure that the cavity is clean, and evacuate to 1-10PaPa;

[0081] 1.2) Heating the cavity so that the temperature of the fluidization area used for pre-dispersing the quantum dot powder in the cavity reaches 80°C, and during the heating process, the fluidization gas is continuously introduced at a flow rate of 100 standard milliliters per minute to pre-disperse the quantum dots;

[0082] 1.3) When the temperature in the chamber reaches 120°C, an atomic layer deposition reaction is completed, including:

[0083] Pass deionized water into the cavity as the first precursor to ma...

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Abstract

Disclosed is a preparation method of a quantum dot film. The preparation method of the quantum dot film comprises the following steps that (1) a metal oxide film with the nanometer or sub-micron thickness is formed on the surfaces of quantum dots in a deposition mode through an atomic layer deposition technology so as to cover the quantum dots; (2) the quantum dots with covering metal oxide coat an organic film polyethylene terephthalate substrate, so that the quantum dot film is obtained through preparation; and (3) oxide films with the nanometer or sub-micron thickness are formed on the surface of the quantum dot film and the surfaces of the quantum dots in a deposition mode through a spatial separation atomic layer deposition technology so as to ensure that the quantum dots are not oxidized. According to the preparation method of the quantum dot film, due to the fact that the method with the step that passive films cover the surfaces of the quantum dots step by step is adopted to prepare the quantum dot film, the problem that due to the fact that the quantum dots are prone to being oxidized, the luminescence performance of the quantum dots is lost is solved, and the preparation method has the advantages of being simple in preparation technology, low in preparation cost and the like.

Description

technical field [0001] The invention belongs to the field of optical material preparation, and more specifically relates to a method for preparing a quantum dot thin film. Background technique [0002] Quantum dots, also known as nanocrystals, are nanoparticles composed of II-VI or III-V elements. The particle size of quantum dots is generally between 1 and 10 nm. Since electrons and holes are quantum-confined, the continuous energy band structure becomes a discrete energy level structure with molecular characteristics, and can emit fluorescence after being excited. The emission spectrum of quantum dots can be controlled by changing the size of the quantum dots. It has good photostability, wide excitation spectrum and narrow emission spectrum. It has a wide range of applications in the fields of solar cells, light-emitting devices, and optical biomarkers. However, because quantum dots are easily damaged by water or oxygen in the air, they lose their luminescent properties. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/455C23C16/52
CPCC23C16/40C23C16/45525C23C16/52
Inventor 陈蓉汪军单斌赵凯张熙文艳伟
Owner HUAZHONG UNIV OF SCI & TECH
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