Structure of high-electron-mobility light-emitting transistor

A technology of high electron mobility and light-emitting transistors, which is applied in the direction of electric solid-state devices, circuits, electrical components, etc., and can solve the problem of uncontrollable brightness of light sources

Active Publication Date: 2016-07-27
黄智方
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The invention provides a structure of a high electron mobility light-emitting transistor, which sol

Method used

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  • Structure of high-electron-mobility light-emitting transistor
  • Structure of high-electron-mobility light-emitting transistor
  • Structure of high-electron-mobility light-emitting transistor

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Embodiment Construction

[0022] see figure 1 , figure 1 A schematic diagram showing an embodiment of the structure of the high electron mobility light-emitting transistor of the present invention. The structure 100 includes: a substrate 101 , a HEMT region 102 , and an LED region L.

[0023] The HEMT region 102 is disposed on the substrate 101 ; and the LED region L is also disposed on the substrate 101 . In this embodiment, the substrate 101 can be realized by a silicon (Si) substrate, or a gallium nitride substrate, or a sapphire substrate, or silicon carbide.

[0024] The structure 100 includes a buffer layer (Buffer) 103 and a barrier layer (Barrier) 104 . The buffer layer 103 is disposed on the substrate 101 ; and the barrier layer 104 is disposed on the buffer layer 103 , and the barrier layer 104 covers part of the buffer layer 103 .

[0025] In this embodiment, the HEMT region 102 includes: a gate (Gate) layer 105 and a source ohmic contact (Sourceohmic contact) layer 106 . The gate lay...

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Abstract

The invention provides a structure of a high-electron-mobility light-emitting transistor, and the structure comprises a substrate; setting a high-electron-mobility light-emitting transistor (HEMT) region on the substrate; and setting a gallium-nitride light-emitting diode (GaN-LED, abbrev. LED) region on the substrate, wherein the HEMT region and the LED region are respectively provided with a two-dimensional electronic gas layer, and the HEMT region is coupled to the LED region through the two-dimensional electronic gas layer. The structure can generate light with different wavelengths, and can control the brightness of a light source in the LED region.

Description

technical field [0001] The present invention relates to a structure of a high electron mobility light-emitting transistor, especially a HEMT built-in LED structure. Background technique [0002] Aluminum Gallium Nitride / Gallium Nitride High Speed ​​Electron Mobility Transistor Field Effect Transistor (AlGaN / GaNHEMT) has extremely high advantages in high temperature, high frequency and high power applications; in addition to GaN used in field effect transistors, because Gallium nitride has a direct bandgap of 3.4eV, so gallium nitride is also suitable for light-emitting devices. The light emitted by gallium nitride and its related ternary compounds has a wide range of wavelengths. From green, blue to UV light, light-emitting diodes with gallium nitride technology have been widely used. Contents of the invention [0003] The invention provides a structure of a high electron mobility light-emitting transistor, which solves the problem in the prior art that the brightness of ...

Claims

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Application Information

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IPC IPC(8): H01L27/15H01L29/778H01L33/06
Inventor 黄智方李奕辰张庭辅郑克勇王佑立吴浚宏杨伟臣邱绍谚
Owner 黄智方
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