Hybrid PIN Schottky diode and preparation method thereof

Abstract

The invention belongs to the technical field of semiconductor devices, and in particular relates to a hybrid PIN Schottky diode and a preparation method thereof. The hybrid PIN Schottky diode disclosed by the invention comprises a GaN substrate, a GaN epitaxial layer, a rectangular-ambulatory-plane GaN structure array, a double-edge terminal structure and a first metal structure, wherein the GaN epitaxial layer is formed on the GaN substrate; the rectangular-ambulatory-plane GaN structure array comprises a plurality of rectangular-ambulatory-plane GaN structures adjacent to each other and is formed on the GaN epitaxial layer; each rectangular-ambulatory-plane GaN structure comprises a GaN peripheral region and a GaN central region; the double-edge terminal structure is positioned on the periphery of the rectangular-ambulatory-plane GaN structure array and comprises a whole edge terminal compensation layer and a partial edge terminal compensation layer, wherein the whole edge terminal compensation layer is positioned on the partial edge terminal compensation layer; and the first metal structure is positioned on the rectangular-ambulatory-plane GaN structure array and is in Schottky contact with the GaN peripheral region. The relatively high reverse breakdown voltage can be obtained in the event that the area of a chip cannot be lost; simultaneously, the problem that the device performance is degraded due to the dislocation problem can be avoided; and thus, the hybrid PIN Schottky diode and the preparation method thereof disclosed by the invention can be well applied in the field of power electronics.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a mixed PIN Schottky diode and a preparation method thereof. Background technique [0002] With the rapid development of information technology, high-power electronic devices such as power switches and power rectifiers have been widely used in various fields of national economy. As a substitute for traditional silicon-based power devices, power devices based on the third-generation wide-bandgap semiconductor GaN materials have attracted much attention because of their excellent material properties and device structure. GaN materials have a large bandgap and electron mobility. Good thermal stability and chemical stability, so it has a wide application prospect in the field of high power and high frequency, and has attracted attention and research. Today, breakthroughs have been made in GaN-based high electron mobility transistors, but the research on GaN...

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Problems solved by technology

However, due to the large dislocation density between silicon and GaN and the high process complexity required to prepare a thin GaN drift region on a silicon substrate, it is difficult to obtain good electrical performance for GaNMPS devices prepared by this method. index

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