Method of forming semiconductor device and processing method for Q-time exceeding of semiconductor device
A processing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of Q-time tension, thinning of copper wires, and easy breakage, so as to avoid thinning and reducing the thickness. The probability of leakage current and the effect of improving product quality
Active Publication Date: 2016-08-10
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
Although this reduces the deterioration of the leakage current to a certain extent, it is a great challenge for mass production, and there are often some products that exceed the Q-time
For products that exceed the Q-time, CMP is currently used for rework (rework), but this is a method that treats the symptoms but not the root cause, and is also faced with the tense Q-time after rework
Moreover, this practice will make the copper metal wire thinner and prone to breakage
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[0023] The core idea of the present invention is to use the principle of alkaline solution to remove the oxide on the copper surface to eliminate the adverse effects of copper ions, after copper chemical mechanical polishing (Cu-CMP), or when the Q-time is exceeded for semiconductor devices , use alkaline solution to clean the semiconductor device and remove the oxide on the copper surface, which can effectively prevent the copper surface from being further oxidized and achieve the purpose of reducing the leakage current.
[0024] The preferred embodiments of the forming method of the semiconductor device and the processing method when exceeding Q-time are enumerated below, to clearly illustrate the content of the present invention, it should be clear that the content of the present invention is not limited to the following embodiments, other Improvements through conventional technical means by those skilled in the art are also within the scope of the present invention.
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The invention discloses a method of forming a semiconductor device, comprising the following steps: providing a front-end structure, wherein the front-end structure has exposed copper metal lines, and the copper metal lines are processed through CMP (chemical Mechanical Polishing); and cleaning the front-end structure with alkaline solution to remove copper ions on the copper metal lines. The invention further discloses a processing method for Q-time exceeding of a semiconductor device. According to the method, the semiconductor device has exposed copper metal lines, and when the queue time (Q-time) after the copper metal lines are processed through CMP exceeds a preset Q-time, the semiconductor device is cleaned with alkaline solution. Through the methods of the invention, copper oxides on copper metal lines are removed, and generation of leakage current between copper metal lines is prevented.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a semiconductor device and a processing method when Q-time is exceeded. Background technique [0002] With the rapid development of semiconductor manufacturing technology, the size of semiconductor devices is getting smaller and smaller. Therefore, the leakage current control between metal lines (Metal lines) is also becoming more and more difficult, which is usually manifested in time-dependent breakdown ( TDDB) detection is often unqualified, especially for chips with a metal-oxide-metal (MOM) structure, leakage current has become an important factor restricting product performance. [0003] In the copper manufacturing process, due to the active physical and chemical properties of copper, under the current production conditions, the waiting time (queue time, Q- time), the leakage current between the copper metal lines will be significantly deteriora...
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IPC IPC(8): H01L21/768
Inventor 杨玲张京晶
Owner SEMICON MFG INT (SHANGHAI) CORP