Preparation method of nano CuSbS2 material

Abstract

The invention discloses a preparation method of nano CuSbS2 material, comprising: sealing a mixture of high-purity Cu, Sb and S powders as a raw material in a ball milling tank, placing the sealed ball milling tank in a glove box, and fully charging an inert gas to remove oxygen in the raw material; mounting the ball milling tank on a ball mill for 30 min of mechanical milling to obtain semiconductor compound CuSbS2 nanocrystal. The prepared copper antimony disulfide has uniform chemical composition and singular structure, is free of surface coverings such as impurities and shows well intrinsic physical properties of the material. With good photoelectric properties, this material can function as a practical photoelectric device material, such as in the infrared detection field, infrared remote sensing field, infrared sensing field and other fields. In addition, the preparation method has the advantages that a preparation process is simple, materials are easy to obtain and low in price, and the method is environment-friendly and available for large-scale production.

Description

technical field [0001] The invention belongs to the field of preparation of nanomaterials, in particular to a nanomaterial antimony copper disulfide (CuSbS 2 ) alloying preparation method. Background technique [0002] In the past two decades, semiconductor nanomaterials have attracted increasing attention due to their small size, unique optical properties, and potential for wide-ranging applications. However, sulfide semiconductor nanomaterials play an important role in basic research and practical applications due to their rich material sources, and have attracted more and more attention from scientists. [0003] The ternary semiconductor material Cu-Sb-S system has received a lot of attention. They are composed of three elements that are abundant on the earth, and the band gap is in the near-infrared region. It is a light-absorbing material with great potential value in the construction of photovoltaic and optoelectronic devices. At present, although there are many rep...

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Problems solved by technology

[0004] CN201510556601.5 Liu Yi and others from Zhejiang University successfully prepared the quaternary sulfur compound ACuSb by solvothermal method 2 S 4 Semiconductor materials, through their preparation process, it can be seen that the reaction is carried out in an organic solvent, and the reaction temperature is 160 ° C, and the reaction time is 7 days, which shows that the surface of the prepared particles is covered with a layer of organic matter, which affects the intrinsic properties of the material. Physical properties, and the temperature of the reaction is high, which has high requirements for the equipment, and the reaction cycle is long, which reduces the efficiency of the synthesis. These shortcomings limit the industrial application of this method

At the same time, the size of the sample they prepared is 200*300um, which makes the sample have a larger size and lower surface activity, which will limit its application range when making precision semiconductor optical devices

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