A Gaas-based light-emitting diode and its manufacturing method

Abstract

A GaAs-based light emitting diode and manufacturing method therefor, the diode sequentially comprising a substrate (200), a DBR reflective layer (210), an N-type semiconductor layer (220), a quantum well light emitting layer (230), a P-type semiconductor layer (240), a transition layer (250) and a GaP current spreading layer (260); the transition layer (250) comprises a graded component layer (251), a low-temperature low-speed GaP layer (252) and an interface processing layer (253), and the GaP current spreading layer (260) is of a mode wherein high-temperature growth is followed by low-temperature growth. By means of the transition layer (250), a dislocation line can be effectively pressed at an interface. A high-temperature GaP current spreading layer is connected with the interface processing layer (253) to further press a dislocation line which extends into an interface layer in the high-temperature GaP current spreading layer, so as to provide a good foundation for the growth of a subsequent high-quality GaP current spreading layer.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a GaAs-based light-emitting diode and a manufacturing method thereof. Background technique [0002] In recent years, LED has developed rapidly and has been widely used in the market. In the field of LED technology, brightness enhancement has always been a research hotspot, and breakthroughs have been made. In GaAs-based LEDs, the light extraction efficiency is mainly improved by flip-chip structure, DBR reflective structure or increasing current injection density. For example, in Chinese Patent No. 201010260023.8, a vertical light-emitting diode with a current blocking structure is proposed for brightness improvement, and a hollow current blocking structure with air as the medium is formed between the electrode and the patterned GaP window layer to reduce the current flow from The bottom of the electrode expands, and more current spreads from around the GaP w...

AI Technical Summary

Problems solved by technology

This method has been widely used, however, the ESD performance of this structure becomes poor under the small size chip

The study found that the main reason is that using this transition method still produces more dislocation lines at the interface, and the dislocation lines extend to the GaP current spreading layer, which affects the crystal quality

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