Preparation method of high-temperature and oxidation resisting heat conduction alumina/graphene foam composite material

A technology of graphene foam and composite materials, which is applied in the preparation of alumina/hydroxide, etc., can solve problems such as defects in anti-oxidation performance, and achieve the effect of simple and controllable coating and high oxidation resistance

Active Publication Date: 2016-09-07
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention aims at the defects of the anti-oxidation performance of the graphene foam prepared by the existing gra...

Method used

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  • Preparation method of high-temperature and oxidation resisting heat conduction alumina/graphene foam composite material
  • Preparation method of high-temperature and oxidation resisting heat conduction alumina/graphene foam composite material
  • Preparation method of high-temperature and oxidation resisting heat conduction alumina/graphene foam composite material

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Embodiment 1

[0031] The graphene oxide powder was added to deionized water for stirring and dispersing, and was stirred at room temperature for 3 hours at a rotational speed of 400 r / min to prepare a graphene oxide aqueous solution with a concentration of 2 mg / ml. 40ml of graphene oxide aqueous solution was placed in the hydrothermal reactor, then the hydrothermal reactor was moved to a muffle furnace and heated to 170 ° C and kept for 10 hours, and the graphene hydrogel obtained by the reaction was frozen after cooling to room temperature to -40°C and freeze-dried at a pressure of 20Pa, then the pure graphene aerogel obtained by freeze-drying and 0.7g of anhydrous aluminum chloride powder were added to ethanol to carry out ultrasonic dispersion, and the power of 300W was ultrasonicated at room temperature for 2 Hour. The mixed suspension of pure graphene aerogel and aluminum chloride solution was added to the hydrothermal reactor, and then the hydrothermal reactor was placed in a muffle f...

Embodiment 2

[0033]The graphene oxide powder was added to deionized water for stirring and dispersion, and stirred at a speed of 500 r / min at room temperature for 2 hours to prepare a graphene oxide aqueous solution with a concentration of 3 mg / ml. 50ml of graphene oxide aqueous solution was placed in the hydrothermal reactor, then the hydrothermal reactor was moved to a muffle furnace and heated to 190 ° C and kept for 12 hours, and the graphene hydrogel obtained by the reaction was frozen after cooling to room temperature. to -30°C and freeze-dried at a pressure of 10Pa, then the pure graphene aerogel obtained by freeze-drying and 0.3g of anhydrous aluminum chloride powder were added to ethylene glycol for ultrasonic dispersion, and the power was 200W at room temperature. Sonicate for 1 hour. The mixed suspension of pure graphene aerogel and aluminum chloride solution was added to the hydrothermal reactor, and then the hydrothermal reactor was placed in a muffle furnace and heated to 180...

Embodiment 3

[0035] The graphene oxide powder was added to deionized water for stirring and dispersion, and stirred at a speed of 300 r / min at room temperature for 2.5 hours to prepare a graphene oxide aqueous solution with a concentration of 2.5 mg / ml. 45ml of graphene oxide aqueous solution was placed in the hydrothermal reactor, then the hydrothermal reactor was moved to a muffle furnace and heated to 200 ° C and kept for 14 hours, and the graphene hydrogel obtained by the reaction was frozen after cooling to room temperature to -50°C and freeze-dried at a pressure of 15Pa, then the pure graphene aerogel obtained by freeze-drying and 0.5g of anhydrous aluminum chloride powder were added to methanol for ultrasonic dispersion, and the power of 250W was ultrasonicated at room temperature for 1.5 Hour. The mixed suspension of pure graphene aerogel and aluminum chloride solution was added to the hydrothermal reactor, and then the hydrothermal reactor was placed in a muffle furnace and heated...

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Abstract

The invention relates to a preparation method of a high-temperature and oxidation resisting heat conduction alumina/graphene foam composite material. The preparation method comprises the following steps: placing an aqueous solution of graphene oxide in a hydrothermal reaction kettle, heating the aqueous solution to 170-200DEG C, keeping the temperature for 10-14h, cooling the heated aqueous solution to obtain graphene hydrogel, adding pure graphene aerogel obtained after lyophilization and anhydrous aluminum chloride powder to a solvent, and carrying out ultrasonic dispersion; adding the above prepared mixed suspension to the hydrothermal reaction kettle, heating the mixed suspension to 180-300DEG C, and keeping the temperature for 10-22h; displacing the solvent of the above prepared graphene/aluminum hydroxide mixed sol with deionized water, lyophilizing the obtained sol, and calcining the lyophilized graphene/aluminum hydroxide mixed aerogel at 950-1300DEG C for 10-20h to obtain the alumina/graphene foam composite material. The thermal weight loss of the composite material is lower than 60% after the composite material is ablated at 800DEG C for 5h, and the heat conductivity of the composite material is higher than 9W/m.K.

Description

technical field [0001] The invention relates to a preparation method of a high temperature-resistant, oxidation-resistant, thermally conductive alumina / graphene foam composite material, in particular to a preparation method of an alumina-coated graphene foam. Background technique [0002] With the rapid development of science and technology since the 21st century, efficient heat conduction and heat dissipation has become a key issue in the field of thermal management materials. For example, during the working process of the structure of the heat-generating device, a large amount of heat is accumulated due to the resistance, thermal resistance, electronic eddy current and other effects of the device itself. This results in an extreme imbalance in the overall component temperature. The surface temperature of most microelectronic chips must be maintained at a low level (such as silicon devices < 100 ℃) to ensure their high-performance work, and many electronic components ne...

Claims

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Application Information

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IPC IPC(8): C01F7/30
CPCC01F7/30C01P2004/03C01P2006/32
Inventor 封伟纪滕霄冯奕钰秦盟盟
Owner TIANJIN UNIV
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