Preparing method for polyhydroxystyrene polymer with molecular weight narrowly distributed

Abstract

The invention belongs to the chemical field of high-molecular polymers and particularly relates to a preparing method and metal impurity purification for a polyhydroxystyrene polymer with molecular weight narrowly distributed to be applied to semiconductor photoresist film-forming resin. The preparing method specifically comprises the following steps that p-acetoxy-styrene monomers are used for synthesizing a poly-acetoxyl styrene polymer with molecular weight narrowly distributed through ATRP active free radical polymerization; the obtained poly-acetoxyl styrene polymer is subjected to an esterlysis reaction under diluted hydrochloric acid catalysis, acetoxyl protection base groups are removed, a poly(p-vinylphenol) polymer is obtained and purified, and a poly(p-vinylphenol) polymer molecular weight narrowly distributed is obtained. According to the preparing method, copper salt halide and an alkylamine ligand are adopted, in the polymerizing process, the polymerizing ending speed is low, the polymerizing increasing speed is controllable, and thephotoresist performance can be greatly improved when the polyhydroxystyrene polymer with molecular weight narrowly distributed is applied to 248 nm photoresist film-forming resin.

Description

technical field [0001] The invention belongs to the field of macromolecular polymer chemistry, and in particular relates to a preparation method of polyhydroxystyrene polymer with narrow molecular weight distribution and purification of metal impurities, so as to be applied to semiconductor photoresist film-forming resin. Background technique [0002] Photolithography is a key process in the production of semiconductor integrated circuits, and photoresist is a key material required in the manufacture of semiconductor chips through photolithography. With the development of the needs of the integrated circuit industry, photolithography technology is continuously improved to produce finer electronic devices, and the structure of polymers in photoresist components is also constantly changing. The polymers used have developed from early cyclized rubber to phenolic resins for G-line and I-line, as well as polyp-hydroxystyrene and polyester cycloacrylate for deep ultraviolet. [0...

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to solve the technical problems of wide molecular weight distribution of photoresist for polyhydroxystyrene and complicated removal process of metal complex ions. , the resulting polymer undergoes an esterolysis reaction under the catalysis of a small amount of dilute hydrochloric acid to remove the acetoxy protecting group, and obtains a poly(p-hydroxystyrene) polymer, and obtains a poly(hydroxystyrene) polymer with a narrow molecular weight distribution after purification