A kind of organic photovoltaic element and preparation method thereof

An organic photovoltaic and photovoltaic element technology, applied in the field of organic photovoltaic elements and their preparation, can solve the problems of poor crystallization ability, reduce the carrier mobility of organic materials, etc., improve thermal stability and chemical stability, and improve the current carrying capacity. Effect of sub-collection efficiency and energy conversion efficiency, achieving long-term stability

Inactive Publication Date: 2018-05-11
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the poor crystallization ability of organic molecules and the inevitable covalent bond vibrations, organic solids have strong structural disorder, which brings energy disorder, which leads to the generation of some shallow traps in the forbidden band, greatly Reduced carrier mobility in organic materials
This problem is an intrinsic defect of organic materials and cannot be completely solved by synthesizing new organic molecular structures

Method used

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  • A kind of organic photovoltaic element and preparation method thereof
  • A kind of organic photovoltaic element and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] The preparation structure is ITO with a thickness of 100nm / PEIE with a thickness of 5nm / P3HT:PC with a thickness of 80nm 61 BM:LCV=12:10:0.24 / MoO with thickness of 10nm 3 / A reverse polymer solar cell of Ag with a thickness of 100 nm.

[0047] The reverse polymer solar cell consists of a layer of ITO cathode layer with a thickness of 100nm on a glass substrate, a layer of PEIE film cathode modification layer with a thickness of 5nm deposited on the ITO cathode layer, and a layer of PEIE film cathode modification layer deposited on the PEIE film cathode layer. 80nm thick P3HT: PC 61 BM: LCV thin film n-type doped photoactive layer, one layer is deposited on P3HT:PC 61 BM: MoO with a thickness of 10 nm on the n-type doped photoactive layer of the LCV film 3 Thin film anode modification layer and a layer deposited on MoO 3 A reverse polymer solar cell composed of an Ag anode layer with a thickness of 100 nm on the thin-film anode modified layer.

[0048] The above-mentioned ITO...

Embodiment 2

[0071] The fabricated structure is ITO with a thickness of 100nm / PEIE with a thickness of 5nm / PTB7-Th:PC with a thickness of 120nm 71 BM:PyB=10:15:1 / MoO with a thickness of 10nm 3 / A reverse polymer solar cell of Ag with a thickness of 100 nm.

[0072] The reverse polymer solar cell consists of a layer of ITO cathode layer with a thickness of 100nm on a glass substrate, a layer of PEIE film cathode modification layer with a thickness of 5nm deposited on the ITO cathode layer, and a layer of PEIE film cathode modification layer deposited on the PEIE film cathode layer. 120nm thick PTB7-Th:PC 71 BM: PyB thin film n-type doped photoactive layer, one layer is deposited on PTB7-Th:PC 71 BM: MoO with a thickness of 10 nm on the n-type doped photoactive layer of the PyB film 3 Thin film anode modification layer and a layer deposited on MoO 3 A reverse polymer solar cell composed of an Ag anode layer with a thickness of 100 nm on the thin-film anode modified layer.

[0073] The ITO anode s...

Embodiment 3

[0087] The fabricated structure is Ag with a thickness of 10nm / PEIE with a thickness of 5nm / PTB7-Th with a thickness of 120nm: IEIC:LCV=10:15:0.1 / MoO with a thickness of 10nm 3 / A reverse polymer solar cell of Ag with a thickness of 100 nm.

[0088] The reverse polymer solar cell is composed of a layer of Ag cathode layer with a thickness of 10nm on a glass substrate, a layer of PEIE film cathode modification layer with a thickness of 5nm deposited on the ITO cathode layer, and a layer deposited on the PEIE film cathode modification layer PTB7-Th: IEIC: LCV thin film n-type doped photoactive layer with a thickness of 120 nm on the top, and a layer of MoO with a thickness of 10 nm deposited on the PTB7-Th: IEIC: LCV thin film n-type doped photoactive layer 3 Thin film anode modification layer and a layer deposited on MoO 3 A reverse polymer solar cell composed of an Ag anode layer with a thickness of 100 nm on the thin-film anode modified layer.

[0089] The glass substrate used in ...

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Abstract

The invention is an environment-friendly organic photovoltaic element. The photovoltaic element consists of a cathode layer on a glass substrate, a cathode modification layer deposited on the cathode layer, and an n-type doped layer deposited on the cathode modification layer. It consists of a photoactive layer, an anode modification layer deposited on the n-type doped photoactive layer, and an anode layer deposited on the anode modification layer. An environmentally friendly organic photovoltaic element proposed by the present invention breaks through the shackles of the traditional two-component photoactive film in the preparation technology of the photoactive film, has original innovation, can improve the carrier collection efficiency and energy conversion efficiency of the device, and has It helps to realize the long-term stability of organic solar cells, thereby improving the performance of organic solar cells.

Description

Technical field [0001] The technical scheme of the present invention relates to a solid device specially adapted to convert light energy into electric energy, specifically an organic photovoltaic element and a preparation method thereof. Background technique [0002] Energy issues are related to national security and are of great significance. In today's world, while reducing fossil energy consumption, people are also actively seeking and developing new energy utilization and conversion technologies. Because organic semiconductors have the advantages of flexibility and low cost, organic solar cells have become one of the current focus of renewable energy technology. At present, organic solar cells usually use polymer / small molecule bulk heterojunction films as the photoactive layer. The highest energy conversion efficiency is close to 12%, but it is still less than the industrialization level of polysilicon solar cells (17-17.5%). [0003] To further improve the energy conversion...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K85/10H10K85/00H10K30/30Y02E10/549
Inventor 秦大山
Owner HEBEI UNIV OF TECH
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