A temperature insensitive laser

Abstract

The invention relates to a temperature insensitive semiconductor laser (100), comprising: a gain region (101) for generating laser radiation; a reflector region (103) for reflecting the laser radiation generated in the gain region (101), and a waveguide (105) for guiding the laser radiation generated in the gain region (101) to the reflector region (103) and for guiding the laser radiation reflected in the reflector region (103) to the gain region (101), wherein the gain region (101), the reflector region (103) and the waveguide (105) define a resonating cavity of the semiconductor laser (100) and wherein the waveguide (105) is substantially athermal.

Description

technical field [0001] The present invention relates to a temperature insensitive (ie, athermal) laser. In particular, the invention relates to a temperature-insensitive semiconductor laser. Background technique [0002] Silicon photonics is rapidly gaining attention as a general-purpose technology platform with wide-ranging applications, such as lasers for broadband sensors and fiber-optic communication networks. Silicon photonics realizes photonic functions by using CMOS-compatible wafer-level technology on high-quality, low-cost silicon substrates. However, the performance of purely passive silicon waveguide devices is still limited in terms of insertion loss, phase noise (which can cause channel crosstalk), and temperature dependence. This is attributed to the high refractive index contrast between the silica cladding and the silicon core, the non-uniform thickness of the silicon layer, and the high thermo-optic effect of silicon. [0003] Today, most of the cost of p...

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