A temperature insensitive laser

A technology of laser and laser radiation, which can be used in lasers, laser parts, semiconductor lasers, etc., and can solve problems such as insufficient

Active Publication Date: 2016-09-14
HUAWEI TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

And when the Ethernet data link reaches 400Gbps, 4 wavelength channels are not enough

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  • A temperature insensitive laser
  • A temperature insensitive laser
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Embodiment Construction

[0029] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustrations specific aspects in which the invention may be practiced. It is to be understood that other aspects may be utilized and structural or logical changes may be made without departing from the scope of the present invention. Accordingly, the following detailed description is not to be taken as limiting, but the scope of the present invention is defined by the appended claims.

[0030] It should be understood that a disclosure about a described method is also applicable to a corresponding device or system for performing the method, and vice versa. For example, if a particular method step is described, a corresponding device may include means for performing said method step, even if this element is not explicitly described or shown in the figures. Furthermore, it is to be understood that the features of the various ex...

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Abstract

The invention relates to a temperature insensitive semiconductor laser (100), comprising: a gain region (101) for generating laser radiation; a reflector region (103) for reflecting the laser radiation generated in the gain region (101), and a waveguide (105) for guiding the laser radiation generated in the gain region (101) to the reflector region (103) and for guiding the laser radiation reflected in the reflector region (103) to the gain region (101), wherein the gain region (101), the reflector region (103) and the waveguide (105) define a resonating cavity of the semiconductor laser (100) and wherein the waveguide (105) is substantially athermal.

Description

technical field [0001] The present invention relates to a temperature insensitive (ie, athermal) laser. In particular, the invention relates to a temperature-insensitive semiconductor laser. Background technique [0002] Silicon photonics is rapidly gaining attention as a general-purpose technology platform with wide-ranging applications, such as lasers for broadband sensors and fiber-optic communication networks. Silicon photonics realizes photonic functions by using CMOS-compatible wafer-level technology on high-quality, low-cost silicon substrates. However, the performance of purely passive silicon waveguide devices is still limited in terms of insertion loss, phase noise (which can cause channel crosstalk), and temperature dependence. This is attributed to the high refractive index contrast between the silica cladding and the silicon core, the non-uniform thickness of the silicon layer, and the high thermo-optic effect of silicon. [0003] Today, most of the cost of p...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/024
CPCH01S5/02407H01S5/1032H01S5/141G02B6/122H01S5/02469H01S5/10H01S5/1071H01S5/3013
Inventor 马汀·塔萨特马科·兰波尼汤姆·柯林斯
Owner HUAWEI TECH CO LTD
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