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Patterned graphene and preparation method therefor

A patterned graphene and graphene technology, applied in the field of materials, can solve the problems of low production efficiency and unsuitability for large-scale production, and achieve the effect of simple process

Active Publication Date: 2016-09-21
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above-mentioned patterned graphene preparation method has certain requirements on the size and shape of the pattern, low preparation efficiency, and is not suitable for large-scale preparation.

Method used

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  • Patterned graphene and preparation method therefor

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preparation example Construction

[0027] It can be seen from the background technology that the preparation method of patterned graphene in the prior art has certain requirements on the size and shape of the pattern, the preparation efficiency is low, and it is not suitable for large-scale preparation. The inventors of the present invention conduct research on the above-mentioned problems, and provide a kind of preparation method of patterned graphene, such as figure 1 As shown, the method comprises the following steps: forming a photoresist layer with a hollow structure on the surface of the hydrophilic substrate by photolithography; utilizing a graphene oxide solution to fill the hollow structure, and partially oxidizing the graphene in the hollow structure The solution is dried to form solid graphene oxide; the photoresist layer is removed; and the solid graphene oxide is reduced to obtain patterned graphene.

[0028] The preparation method forms a photoresist layer with a hollow structure on the surface of...

Embodiment 1

[0042] The preparation method of patterned graphene provided by the present embodiment comprises the following steps:

[0043] S1. Spin-coat photoresist (model 9912, manufacturer Micro.Chem.) on the surface of the silicon dioxide / silicon composite substrate, form the desired pattern on the substrate surface by exposure, and remove the light at the pattern by developing Resist, so that part of the surface of the hydrophilic substrate is exposed to form a photoresist layer with a hollow structure.

[0044] S2. Put the above-mentioned substrate after photolithography into a graphene oxide aqueous solution with a concentration of 0.1 mg / ml, and keep it horizontally and take it out of the solution, so that the graphene oxide aqueous solution is filled in the hollow structure, and then placed at room temperature The graphene oxide solution is dried to form solid graphene oxide.

[0045] S3, putting the above substrate into an acetone solution to dissolve the photoresist layer, clea...

Embodiment 2

[0048] The difference between the preparation method of patterned graphene provided in this embodiment and embodiment 1 is:

[0049] In step S2, the substrate is taken out of the solution at an angle of 10°.

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Abstract

The invention provides patterned graphene and a preparation method therefor. The preparation method comprises the following steps: forming a photoresist layer with a hollow structure on the surface of a hydrophilic substrate by adopting a photoetching technology; filling the hollow structure by using a graphene oxide solution, and carrying out drying treatment on part of the graphene oxide solution in the hollow structure so as to form solid-state graphene oxide; removing the photoresist layer; and carrying out reduction on the solid-state graphene oxide, thereby obtaining the patterned graphene. According to the preparation method, the process is simple, the problem of other preparation methods that the surface of graphene is contaminated is avoided, and the control on the thickness of a graphene film can be achieved through selecting the concentration of an aqueous solution of graphene oxide, so that the preparation method can be applicable to the preparation of conducting channels in graphene devices and the implementation of electric interconnection of the graphene in circuits.

Description

technical field [0001] The invention relates to the field of material technology, in particular to a patterned graphene and a preparation method thereof. Background technique [0002] Due to its excellent electrical properties, optical properties, chemical stability and good thermal conductivity, graphene has strong application value in the fields of electronics, optics and biological detection. However, the high-efficiency and low-cost preparation of patterned graphene films is a bottleneck restricting its large-scale application. In order to solve this problem, various solutions have been proposed. [0003] Some researchers use laser direct writing technology to reduce graphene oxide to graphene by laser irradiation, thereby obtaining patterned graphene on graphene oxide film (Nat.Nanotechnol., 2011, 6, 496); Elasticity and mechanical properties, using nanoimprint (Adv.Mater.2009,21,2098) and micro-channel technology (ACS Nano 2010,4,3201) to prepare patterned graphene fi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 张大勇金智史敬元彭松昂
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI