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Reinforcing structure reinforced sapphire substrate and preparation method thereof

A technology of sapphire substrate and reinforcement structure, which is applied in the direction of gaseous chemical plating, coating, instrument, etc., can solve the problems of failure to reach the breaking strength, large fluctuation of value, and not as good as the current one, so as to reduce the thickness of the product and improve the mechanical strength. Strength, cost reduction effect

Inactive Publication Date: 2016-09-21
黄小卫 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, because sapphire has a crystal structure, the material properties are anisotropic; the hardness is high, and various visible and invisible micro-cracks or scratches are easy to form during processing; making the sapphire crystal screen cover in Ring-on-Ring, 4- Point Bending, and the value fluctuates greatly in the drop test; the specific and popular description is as follows: in the case of good processing, the performance of various types is several times that of existing glass, and it is not easy to decay; if the processing is not good, The performance test is not as good as the existing glass, far from the theoretical breaking strength; and only through the destructive test can the problem be found, which limits the large-scale application of the sapphire screen cover in the mobile phone industry

Method used

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  • Reinforcing structure reinforced sapphire substrate and preparation method thereof
  • Reinforcing structure reinforced sapphire substrate and preparation method thereof

Examples

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Effect test

Embodiment 1

[0028] A method for preparing a reinforced sapphire substrate comprising the following steps:

[0029] a. Take the sapphire substrate 1 with a thickness of 0.4mm, clean surface and pre-opened circular process hole 2, for standby, and the sapphire substrate is subjected to ultrasonic alkali cleaning, pure water rinsing, ultrasonic pure water rinsing and after The substrate obtained after drying with pure nitrogen at a temperature of 100~200°C;

[0030] b. Put the sapphire substrate 1 into a vacuum chamber, pump the air pressure of the vacuum chamber below 10 Pa, and then feed argon gas with a flow rate of 10 sccm, keep the pressure of the argon gas in the vacuum chamber at 10 Pa, and heat the sapphire substrate 1 to 100°C, Then feed trimethylaluminum vapor into the vacuum chamber, the volume ratio of trimethylaluminum vapor to argon is controlled at 0.1%, and the feeding time of trimethylaluminum vapor is controlled at 0.01 second, so that the molecules of trimethylaluminum Ev...

Embodiment 2

[0039] A method for preparing a reinforced sapphire substrate comprising the following steps:

[0040] a. Take a sapphire substrate 1 with a thickness of 0.4 mm, a clean surface and pre-opened square process holes 2, for standby, and the sapphire substrate 1 is subjected to ultrasonic alkali cleaning, pure water rinsing, ultrasonic pure water rinsing and cleaning in sequence. Substrates after plasma surface treatment;

[0041] b. Put the sapphire substrate 1 into a vacuum chamber, pump the air pressure of the vacuum chamber below 10Pa, and then feed nitrogen gas with a flow rate of 10000 sccm, keep the nitrogen pressure in the vacuum chamber at 5000Pa, heat the sapphire substrate 1 to 500°C, and then Introduce trimethylaluminum vapor into the vacuum chamber, the volume ratio of trimethylaluminum vapor to nitrogen is controlled at 50%, and the introduction time of trimethylaluminum vapor is controlled at 5 seconds, so that the molecules of trimethylaluminum are evenly adsorbed ...

Embodiment 3

[0050] A method for preparing a reinforced sapphire substrate comprising the following steps:

[0051] a. Take a 0.4mm thick sapphire substrate 1 with a clean surface and pre-opened circular process holes 2 for standby, and the sapphire substrate 1 is subjected to ultrasonic alkali cleaning, pure water rinsing, and ultrasonic pure water rinsing in sequence And the substrate obtained after drying with pure nitrogen at a temperature of 100~200°C;

[0052] b. Put the sapphire substrate 1 into a vacuum chamber, pump the vacuum chamber pressure below 10Pa, and then pass in an inert gas with a flow rate of 5000 sccm, keep the pressure of the inert gas in the vacuum chamber at 2500Pa, heat the sapphire substrate 1 to 300°C, Then feed trimethylaluminum vapor into the vacuum chamber, the volume ratio of trimethylaluminum vapor to inert gas is controlled at 25%, and the feeding time of trimethylaluminum vapor is controlled at 3 seconds, so that the molecules of trimethylaluminum Evenly...

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Abstract

The invention discloses a reinforcing structure reinforced sapphire substrate, comprising a sapphire substrate, wherein the sapphire substrate is provided with an auxiliary hole, an upper surface, a lower surface, side faces at four sides and an inner wall of the auxiliary hole of the sapphire substrate are all provided with a reinforcing structure layer, and the reinforcing structure layer is a single crystal alumina film layer or a glassy state alumina film layer. A preparation method of the reinforcing structure reinforced sapphire substrate mainly comprises steps: adsorbing trimethyl aluminum on the surface of the sapphire substrate, blowing redundant trimethyl aluminum steam with an inert gas, forming the reinforcing structure layer and blowing redundant oxidizing gas with the inert gas. According to the invention, an atomic layer vapor deposition sapphire single crystal film layer or the glassy state alumina film layer are used for reinforcing the substrate, and the sapphire substrate for a capacitive touch screen, which can greatly improve mechanical strength of a sapphire substrate slice, particularly anti-fall strength and compression strength of various machineries related to a mobile phone touch screen industry, and can reduce product thickness and lower cost, is prepared.

Description

technical field [0001] The invention discloses a sapphire substrate used in the electronics and optics industry. The invention especially discloses a reinforced structure reinforced sapphire substrate used in the touch screen industry. The invention also discloses a preparation method of a reinforced structure reinforced sapphire substrate . Background technique [0002] With the development of science and technology, touch screens have gradually replaced mechanical button panels as new operating interfaces for electronic devices such as mobile phones and notebooks. Touch screens can generally be divided into resistive touch screens, capacitive touch screens and infrared touch screens according to their working principles, and capacitive touch screens are widely used in more and more products because of their light transmittance, clarity and reliability. . [0003] The structure of the capacitive touch screen is mainly to coat one or two layers of transparent thin film con...

Claims

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Application Information

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IPC IPC(8): G06F3/044C23C16/455
CPCG06F3/044C23C16/45525
Inventor 黄小卫
Owner 黄小卫