Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solar grade crystal silicon slicing technique

A solar-grade, slicing technology, used in work accessories, manufacturing tools, stone processing equipment, etc., can solve the problems of low efficiency, poor efficiency, and high cost, and achieve the effect of reducing production costs, improving benefits, and improving work efficiency.

Inactive Publication Date: 2016-09-28
浙江海顺新能源有限公司
View PDF14 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to overcome the deficiencies in the background technology, the present invention provides a solar-grade crystalline silicon slicing process, which mainly solves the problems of low efficiency, high cost and poor benefit of the existing solar-grade crystalline silicon slicing. The advanced technological process has greatly reduced the undesirable phenomena such as fragments, lobes, thick slices, line marks and missing corners during the slicing process of crystal silicon. Due to the improvement of the mortar formula combined with factors such as speed and feed, the tangent can be Secondary use greatly reduces production costs, improves operating efficiency, and greatly improves benefits

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar grade crystal silicon slicing technique
  • Solar grade crystal silicon slicing technique

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0018] Such as figure 1 combine figure 2 As shown, a solar-grade crystalline silicon slicing process, the specific steps of the process are as follows:

[0019] 1) Fixing, paste and fix the silicon ingot 1 on the sticking table 2, a glass plate 3 is provided between the silicon ingot 1 and the sticking table 2, and baffles 4 are provided on both sides of the silicon ingot 1, and the baffles 4 Stick together with the silicon ingot 1 and fix it on the glass plate 3, the baffle plate 4 is used to fix the balance of the slice, the sticking table 2 is also provided with a briquetting block 5, the weight of the briquetting block 5 is 20-45kg, further briquetting 5 The weight is 25kg, the temperature of the silicon ingot 1 is fixed at 24-28°C, and the humidity is 30-40%; Use glue B in between, first use glue B to fix glass plate 3 and sticking table 2, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a solar-grade crystalline silicon slicing process. The invention mainly solves the problems of low efficiency, high cost and poor benefit of existing solar-grade crystalline silicon slices. The process includes 1) fixation; 2) cutting; 3) glue removal; 4) film loading; 5) cleaning: 6) drying; 7) inspection; 8) storage. The solar-grade crystalline silicon slicing process, through a reasonable process, has reduced the undesirable phenomena such as fragments, lobes, thick slices, line marks, and missing corners during the slicing process of crystalline silicon. Due to the improved combination of mortar formula The speed, feed and other factors make the tangent thread reusable, which greatly reduces the production cost, improves the operation efficiency, and greatly improves the benefit.

Description

technical field [0001] The invention relates to the technical field of slicing processing of polycrystalline silicon, in particular to a solar-grade crystalline silicon slicing process. Background technique [0002] Solar energy is a kind of new energy. The practical use of solar energy has made great progress for human beings. It can play a role in environmental protection and energy saving, make full use of natural resources, and bring infinite convenience to human life. The realization of solar energy is to convert solar energy into electrical energy through solar panels, and then provide it for human use. The solar panel is naturally produced by chemical and physical reactions on silicon wafers, and the cutting of silicon wafers is one of the important steps in the completion of solar panels. . The existing slicing process has undesirable phenomena such as easy fragments, lobes, thick and thin slices, line marks, and missing corners during the silicon wafer cutting proc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04B28D7/00B08B3/12
CPCB28D5/045B08B3/12B28D5/0058B28D5/0082
Inventor 季丽
Owner 浙江海顺新能源有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com