Grower for effectively restraining gallium oxide crystal defects

Abstract

The invention discloses a grower for effectively restraining gallium oxide crystal defects. The grower comprises a plurality of thermal field components in a formed single crystal furnace, and the thermal field components are horizontally and concentrically mounted. A heating body and an iridium crucible are embedded into the center of a thermal field and heated by round induction coils, the heating body and the iridium crucible are separated, and a clearance is reserved between the heating body and the iridium crucible. Each thermal field component comprises a zirconia inner heat preservation barrel for supporting an iridium reflecting screen, an upper heat preservation component covering the iridium reflecting screen, a middle heat preservation component surrounding the zirconia inner heat preservation barrel, and a lower heat preservation component surrounding the iridium crucible and the heating body, and seed rod inlets are reserved in the upper heat preservation component. According to design of the grower, losses of the iridium crucible can be reduced, the content of impurity elements in crystals can be effectively restrained, therefore, the defects in the crystals can be restrained well, the service life of the crucible can be prolonged, and a foundation is laid for achieving mass production of gallium oxide single crystals with high quality and low cost.

Description

technical field [0001] The invention relates to crystal material growth technology, in particular to a growth device for effectively suppressing gallium oxide crystal defects. Background technique [0002] Gallium oxide material has a band gap of 4.9eV and a transmittance of about 80% in the deep ultraviolet region. It can be used to make ultraviolet lasers, various sensor components and imaging components. In addition, its breakdown electric field strength is about 20 times that of Si. Compared with SiC and GaN, gallium oxide materials can be used to manufacture high withstand voltage and low loss power semiconductor components, which is a promising alternative. with oxide semiconductor materials. However, gallium oxide has a high melting point (1740-1820°C), is easy to volatilize and decompose, and at the same time corrodes the crucible more severely, so impurities are easily introduced during the crystal growth process, resulting in more defects. Since gallium oxide has...

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Problems solved by technology

[0004] In view of the problems existing in the prior art, the object of the present invention is to provide a growth device for effectively suppressing crystal defects in view of a large number of defects in the crystal caused by induction heating of the iridium crucible during the growth process of gallium oxide crystals

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