Liquid-phase growing silicon carbide seed crystal shaft device

Abstract

The invention discloses a liquid-phase growing silicon carbide seed crystal shaft device, and belongs to the field of novel material preparation. The device comprises a moving connection part, a heat resistant part and a graphite platform which are detachably connected in sequence, wherein a seed crystal is connected to the other end of the graphite platform; the heat resistant part is a heat resistant material of which the thermal conductivity is lower than that of graphite and does not react with silicon steam; the seed crystal can be square, round, polygonal or the like; the graphite platform is the same as that of the seed crystal in shape, and is not smaller than the seed crystal in size; the radial size of the heat resistant part is not smaller than those of the moving connection part and the graphite platform, or the radial size of the heat resistant part is not larger than those of the moving connection part and the graphite platform; each of the two ends of the heat resistant part is of an internal thread structure and each of the moving connection part and graphite platform connected with the heat resistant part is of an external thread structure, or each of the two ends of the heat resistant part is of an external thread structure and each of the moving connection part and graphite platform connected with the heat resistant part is of an internal thread structure.

Description

technical field [0001] The invention relates to a silicon carbide seed axis device for liquid phase growth, belonging to the technical field of new material manufacturing equipment. Background technique [0002] Silicon carbide (SiC) single crystal has the advantages of wide bandgap, high thermal conductivity, high breakdown field strength, and high saturation electron drift rate. The third generation of semiconductor materials developed later. The bandgap width of SiC single crystal is 3 times that of silicon, the thermal conductivity is 3.3 times that of silicon, the breakdown field strength is 13 times that of silicon, and the saturation electron drift rate is 2.7 times that of silicon. Therefore, compared with silicon single crystal, the excellent performance of SiC single crystal can better meet the new requirements of modern electronic technology for high temperature, high pressure, high frequency, high power and radiation resistance. [0003] The wide bandgap perfor...

AI Technical Summary

Problems solved by technology

As the size of the growing crystal increases, the graphite shaft itself will also take away a certain amount of heat, and then dissipate the heat through the opening at the top, and an increasing axial temperature gradient will be formed in the entire growth chamber, resulting in a slow growth rate of the crystal. Fast, accompanied by miscellaneous crystal growth, resulting in uncontrollable crystal quality

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