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Method for preparing high silicon-aluminum alloy electronic packaging material through spray deposition and near-melting point compacting densification

An electronic packaging material, high-silicon aluminum alloy technology, applied in the field of modern electronic packaging, can solve the problems of high cost, complex processing procedures, long processing time, etc., and achieve the effect of low equipment requirements, simple process and low energy consumption

Inactive Publication Date: 2016-10-05
CENT SOUTH UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The traditional densification treatment is usually rolling, forging and other methods, all of which have disadvantages such as high cost, complicated processing procedures, long processing time, and uneven densification of processed materials, which are difficult to meet the requirements of densification treatment of high-silicon aluminum alloy materials

Method used

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  • Method for preparing high silicon-aluminum alloy electronic packaging material through spray deposition and near-melting point compacting densification
  • Method for preparing high silicon-aluminum alloy electronic packaging material through spray deposition and near-melting point compacting densification
  • Method for preparing high silicon-aluminum alloy electronic packaging material through spray deposition and near-melting point compacting densification

Examples

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Effect test

example 1

[0023] Example 1, Al-30%Si Alloy Densified by Spray Deposition Near Melting Point

[0024] Melting, refining and degassing pure aluminum and high-purity silicon in a medium-frequency induction furnace, with a Si content of 30%, using a circular slit airflow atomization nozzle, using high-pressure liquid nitrogen as the atomization cooling medium, atomization system and deposition substrate The matching method is oblique spraying and straight pulling, and the specific process parameters for preparing Al-30% Si alloy by spray deposition are as follows: the inclination angle is 20°, the atomizing gas pressure is 0.6MPa, the melt temperature is 1273K, the eccentricity is 20mm, the deposition distance The diameter of the nozzle is 300 mm, the diameter of the nozzle is 3 mm, the rotation speed of the deposition disc is 500 r·min-1, and the descending speed of the deposition disc is 12.8 mm·min-1. Process the deposited blank into a size of Φ100×100mm, put it into a mold, heat it to 7...

example 2

[0026] Example 2. Densification of Al-40% Si alloy by spray deposition near melting point

[0027] Melting, refining and degassing pure aluminum and high-purity silicon in a medium-frequency induction furnace, with a Si content of 40%, using a circular slot airflow atomization nozzle, using high-pressure liquid nitrogen as the atomization cooling medium, atomization system and deposition substrate The matching method is oblique spraying and straight pulling, and the specific process parameters for preparing Al-40% Si alloy by spray deposition are as follows: the inclination angle is 20°, the atomizing gas pressure is 0.8MPa, the melt temperature is 1393K, the eccentricity is 20mm, the deposition distance The diameter of the nozzle is 380mm, the diameter of the nozzle is 4mm, the rotation speed of the deposition disk is 500r / min, and the descending speed of the deposition disk is 15.5mm / min. Process the deposited blank into a size of Φ100×100mm, put it into a mold, heat it to 8...

example 3

[0029] Example 3, Al-50% Si Alloy Densified by Spray Deposition Near Melting Point

[0030] Melting, refining and degassing pure aluminum and high-purity silicon in a medium-frequency induction furnace, with a Si content of 50%, using a circular slot airflow atomization nozzle, using high-pressure liquid nitrogen as the atomization cooling medium, atomization system and deposition substrate The matching method is oblique spraying and straight pulling, and the specific process parameters for preparing Al-50% Si alloy by spray deposition are as follows: the inclination angle is 20°, the atomizing gas pressure is 1MPa, the melt temperature is 1473K, the eccentricity is 25mm, and the deposition distance is 380mm, the diameter of the nozzle is 4.5mm, the rotation speed of the deposition disk is 500r / min, and the descending speed of the deposition disk is 17.2mm / min. Process the deposited blank to a size of Φ100×100mm, put it into a mold, heat it to 900°C with an induction coil, and...

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Abstract

The invention relates to a method for preparing a high silicon-aluminum alloy electronic packaging material through spray deposition and near-melting point compacting densification. The method comprises the following steps: preparing a silicon-aluminum material, wherein the mass percentage of a silicon raw material is 30-50%, and the balance is industrial pure aluminum; putting the mixed material in a medium-frequency induction furnace for heating and stirring, covering for slagging and degassing, employing spray deposition for preparing metal melt to ingots; pre-treating the ingots; performing near-melting point compacting densification on the pre-treated alloy material, and demoulding with cold water to obtain the high silicon-aluminum alloy electronic packaging material with excellent performance. The method provided by the invention has the advantages of simple process, low equipment requirements, and less energy consumption; the mechanical property, thermal expansion coefficient, thermal conductivity and airtight performance of the produced alloy material can reach the usage requirement of the electronic packaging material, comprehensive performance is excellent, and the produced alloy material is suitable for the field of modern electronic packaging.

Description

technical field [0001] The invention belongs to the technical field of modern electronic packaging, and in particular provides a method for preparing high-silicon aluminum alloy electronic packaging materials through spray deposition and densification near melting point. Background technique [0002] In the field of modern electronic packaging technology, high-silicon aluminum alloy materials have good specific stiffness, thermal expansion coefficient and thermal conductivity, match printed circuit boards, and can reduce radio frequency scattering and radiation loss. It is an excellent electronic packaging material and is widely used. Used as a backing for high-frequency printed circuits. However, when the mass fraction of Si in the alloy composition is greater than 12.2%, the traditional melting and casting method is used to prepare silicon-aluminum alloys, and the distribution of the Si phase in the alloy is extremely uneven, which eventually leads to poor mechanical prope...

Claims

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Application Information

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IPC IPC(8): C22C1/00C22C21/02
Inventor 王日初邓宏贵刘继嘉
Owner CENT SOUTH UNIV