Palladium-silver nano-film hydrogen-sensitive element and manufacturing method

A nano-film, palladium-silver alloy technology, applied in the direction of electrical components, nanotechnology, electrical solid devices, etc., can solve the problem of sensor instability and achieve the effects of fast response speed, fast recovery speed, and high stability

Inactive Publication Date: 2016-10-12
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its hydrogen-sensing mechanism is hydrogen absorption expansion of palladium particles, but its large expansion coefficient (11%) leads to instability of the sensor

Method used

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  • Palladium-silver nano-film hydrogen-sensitive element and manufacturing method
  • Palladium-silver nano-film hydrogen-sensitive element and manufacturing method
  • Palladium-silver nano-film hydrogen-sensitive element and manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] 1.1 Substrate selection:

[0041] A 9mm×9mm silicon oxide wafer is selected as the sputtering substrate.

[0042] P100 polished silicon oxide wafers are products currently on the market, such as P100 polished silicon oxide wafers produced by Hengyang Transistor Co., Ltd.

[0043] 1.2 Substrate cleaning:

[0044] The selected substrates were ultrasonically cleaned with deionized water, acetone, and absolute ethanol, respectively. The cleaning time is 15 minutes. All reagents used were of analytical grade.

[0045] The ultrasonic instrument used for ultrasonic cleaning is a product currently on the market, such as the KQ-250DE numerically controlled ultrasonic cleaner produced by Kunshan Ultrasonic Instrument Co., Ltd.

[0046] 1.3 Preparation of highly sensitive electrodes:

[0047] 1.3.1 Install target and sample

[0048] Cover the mask plate on the cleaned substrate, compact it with a pressing sheet, and install it on the sample holder. Turn on the vacuum gauge ...

Embodiment 2

[0061] 2.1 Substrate selection:

[0062] A 9mm×9mm single crystal silicon wafer is selected as the sputtering substrate.

[0063] 2.2 Substrate cleaning:

[0064] The selected substrates were ultrasonically cleaned with deionized water, acetone, and absolute ethanol, respectively. The cleaning time is 15 minutes. All reagents used were of analytical grade.

[0065] 2.3 Preparation of highly sensitive electrodes:

[0066] 2.3.1 Install target and sample

[0067] Cover the mask plate on the cleaned substrate, compact it with a pressing sheet, and install it on the sample holder. Turn on the vacuum gauge and record the power-on vacuum. Equilibrate the sputtering chamber to the outside atmospheric pressure by opening the valve. Place the target in the center of the target position and fix it. Place the sample holder with the substrate with the reticle mounted on the sample holder. Close the protective cover and prepare to vacuum.

[0068] 2.3.2 Vacuuming

[0069] Start ...

Embodiment 3

[0080] 3.1 Substrate selection:

[0081] A 10mm×10mm quartz glass sheet is selected as the sputtering substrate.

[0082] 3.2 Substrate cleaning:

[0083] The selected substrates were ultrasonically cleaned with deionized water, acetone, and absolute ethanol, respectively. The cleaning time is 15 minutes. All reagents used were of analytical grade.

[0084] 3.3 Preparation of highly sensitive electrodes:

[0085] 3.3.1 Install target and sample

[0086] Cover the mask plate on the cleaned substrate, compact it with a pressing sheet, and install it on the sample holder. Turn on the vacuum gauge and record the power-on vacuum. Equilibrate the sputtering chamber to the outside atmospheric pressure by opening the valve. Place the target in the center of the target position and fix it. Place the sample holder with the substrate with the reticle mounted on the sample holder. Close the protective cover and prepare to vacuum.

[0087] 3.3.2 Vacuuming

[0088] Start the mech...

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PUM

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Abstract

The invention discloses a palladium-silver nano-film hydrogen-sensitive element and a manufacturing method. A direct-current magnetron sputtering process is adopted, and on an oxidation silicon wafer provided with electrodes in a sputtering mode, the hydrogen-sensitive element is manufactured according to the steps of palladium sputtering, palladium nano-film forming, heat treatment, silver sputtering, palladium-silver compound nano-film forming and heat treatment. The hydrogen-sensitive element has the advantages that the response time is shorter than 5 s, the reply time is shorter than 10 s, repeatability is good, selectivity is high, and environmental change resistance is high. Response behaviors under the same hydrogen concentration condition are almost completely consistent, and the hydrogen-sensitive element can back to an initial state after multiple times of high-hydrogen-concentration hydrogen sensitive experiments in a laboratory; the process has a batch industrial production condition, is used for detecting leakage of hydrogen when applied to actual production and plays a role in safe protection.

Description

technical field [0001] The invention relates to a palladium-silver alloy nano-film hydrogen sensitive element and a manufacturing method, belonging to the technical field of inorganic nano-functional material hydrogen sensors. Background technique [0002] Hydrogen is a clean, efficient, and sustainable energy that is widely used in industry and high-tech industries. Hydrogen can be prepared by hydrolysis and other methods, and it belongs to secondary energy. Hydrogen only produces water after combustion, and it can be recycled, clean and pollution-free. It is an ideal new energy source in the future. However, hydrogen is a flammable, explosive and extremely dangerous gas. Its explosion limit in air is 4% to 75.6%. There are countless examples of major safety accidents caused by hydrogen leakage. Therefore, it is necessary to monitor hydrogen. A sensor with high sensitivity, fast response, good repeatability, and a wide range of temperature applications. Commonly used hydr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/04B82Y40/00H01L49/02
CPCG01N27/04B82Y40/00H10N97/00
Inventor 胡永明张广亮雷金梅王钊顾豪爽
Owner HUBEI UNIV
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