An infrared image sensor and its manufacturing method
An infrared image and manufacturing method technology, which is applied to semiconductor devices, electric solid-state devices, radiation control devices, etc., can solve the problems of rare reports on the application of digital image forming, and achieve the effects of low processing cost, low cost and good stability.
Active Publication Date: 2019-05-07
SUZHOU ZHIQUAN ELECTRONICS TECH CO LTD
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Problems solved by technology
It has been well applied in individual devices, but there are few reports on the application of digital image forming on silicon-based large-scale integrated circuits
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Embodiment 1
[0043] Such as Figure 4 , Figure 5 , Image 6 Shown, a kind of infrared image sensor of the present invention comprises:
[0044] P-type silicon substrate 1 .
[0045] The first CMOS2 and the second CMOS5 are formed on the P-type silicon substrate 1 . The first CMOS2 and the second CMOS5 have the same structure, and the CMOS2 includes a gate 21 composed of a gate oxide layer 211 and a gate polysilicon 212, a source 22 composed of source ions, and a gate composed of drain ions. Drain 23. The gate 21 is connected to a third electrode 24 , the source 22 is connected to a fourth electrode 25 , and the drain 23 is connected to a fifth electrode 26 .
[0046] An infrared photodiode 3 formed on the P-type silicon substrate 1 . In this embodiment, the infrared photodiode 3 includes a zinc sulfide layer 31 , a mercury cadmium telluride layer 32 , a first electrode 33 , and a second electrode 34 .
[0047] A silicon-based photodiode 4 formed on the P-type silicon substrate 1 . ...
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The invention discloses a novel infrared image sensor, which comprises a P-type silicon substrate, a first CMOS, a second CMOS, infrared photodiodes and silicon-based photodiodes. First photosensitive units formed by the infrared photodiodes capable of detecting an infrared wave and second photosensitive units formed by the silicon-based photodiodes capable of detecting visible light can be arranged in a photosensitive array of the image sensor CIS according to multiple matrixes, so that simultaneous detection on the visible light and infrared light and photoelectric imaging can be achieved. A zinc sulfide thin film and a mercury-cadmium-tellurium thin film are successively deposited into a deep trench formed in the surface of the silicon substrate to form the infrared photodiodes capable of detecting the infrared wave. The infrared image sensor capable of achieving high integration and low cost can be provided by combining a large-scale integrated circuit manufacturing principle and an advanced infrared detector principle on a traditional silicon-based technology; and the novel infrared image sensor is high in integration level, low in processing cost, good in stability and suitable for large-scale production.
Description
Technical field: [0001] The invention belongs to the technical field of electronic components, and in particular relates to an infrared image sensor and a manufacturing method thereof. Background technique: [0002] Generally, there are two types of semiconductor image sensors, charge-coupled device (CCD) and CMOS image sensor (CIS). There are many neatly arranged capacitors on the charge-coupled device, which can sense light and convert the image into a digital signal; CMOS image sensor is composed of Composed of photodiodes and CMOS devices, including image sensitive cell arrays, row / column drivers, timing control logic, AD converters, data bus output ports, control buses, etc., and these components can usually be integrated on the same chip. Compared with charge-coupled sensor devices, CMOS image sensors also have advantages such as better anti-interference ability, so CMOS image sensors are widely used in consumer electronics products such as mobile phones and personal c...
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IPC IPC(8): H01L27/146
CPCH01L27/14649H01L27/1465H01L27/14683
Inventor 彭坤刘开锋刘红元
Owner SUZHOU ZHIQUAN ELECTRONICS TECH CO LTD