An infrared image sensor and its manufacturing method
A technology of infrared image and production method, which is applied in the direction of semiconductor devices, electric solid devices, radiation control devices, etc., can solve the problems of digital image forming applications that are rarely reported, and achieve low processing cost, good stability, and low cost.
Active Publication Date: 2019-06-18
SUZHOU ZHIQUAN ELECTRONICS TECH CO LTD
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Problems solved by technology
It has been well applied in individual devices, but there are few reports on the application of digital image forming on silicon-based large-scale integrated circuits
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Embodiment 1
[0037] Such as Figure 5 As shown, the infrared image sensor of the present invention includes:
[0038] A P-type silicon substrate 1 , a CMOS 2 formed on the P-type silicon substrate 1 , and an infrared photodiode 3 formed on the P-type silicon substrate 1 .
[0039] The CMOS 2 includes a gate 201 composed of a gate oxide layer 211 and a gate polysilicon 212 , a source 22 composed of source ions, and a drain 23 composed of drain ions.
[0040] The infrared photodiode 3 includes a zinc sulfide layer 31 and a mercury cadmium telluride layer 32 located above the zinc sulfide layer 31 .
[0041] The ZnS layer 31 is connected to a first electrode 33 , and the HgCdTe layer 32 is connected to a second electrode 34 .
[0042] The gate 21 is connected to a third electrode 24 , the source 22 is connected to a fourth electrode 25 , and the drain 23 is connected to a fifth electrode 26 .
[0043] The manufacturing method of the infrared image sensor of the present invention comprises ...
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The invention discloses an infrared image sensor, which comprises a P-type silicon substrate and a CMOS, wherein the CMOS is formed on the P-type silicon substrate; and an infrared photodiode is formed on the P-type silicon substrate and comprises a zinc sulfide layer and a mercury-cadmium-tellurium layer located at the upper part of the zinc sulfide layer. According to the infrared image sensor disclosed by the invention, a zinc sulfide layer thin film and a mercury-cadmium-tellurium thin film are successively deposited into a deep trench formed in the surface of the silicon substrate to form the infrared photodiode capable of detecting an infrared wave. The infrared image sensor capable of achieving high integration and low cost can be provided by combining a large-scale integrated circuit manufacturing principle and an advanced infrared detector principle on a traditional silicon-based technology, so that the consumer electronics infrared sensor can be prepared; and the infrared image sensor is high in integration level, low in processing cost, good in stability and suitable for large-scale production.
Description
Technical field: [0001] The invention belongs to the technical field of electronic components, and in particular relates to an infrared image sensor and a manufacturing method thereof. Background technique: [0002] Generally, there are two types of semiconductor image sensors, charge-coupled device (CCD) and CMOS image sensor (CIS). There are many neatly arranged capacitors on the charge-coupled device, which can sense light and convert the image into a digital signal; CMOS image sensor is composed of Composed of photodiodes and CMOS devices, including image sensitive cell arrays, row / column drivers, timing control logic, AD converters, data bus output ports, control buses, etc., and these components can usually be integrated on the same chip. Compared with charge-coupled sensor devices, CMOS image sensors also have advantages such as better anti-interference ability, so CMOS image sensors are widely used in consumer electronics products such as mobile phones and personal c...
Claims
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IPC IPC(8): H01L27/146
CPCH01L27/14649H01L27/14683
Inventor 彭坤刘开锋刘红元
Owner SUZHOU ZHIQUAN ELECTRONICS TECH CO LTD