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Silicon-ytterbium-ion-codoped YAG superfast scintillating crystal and preparation method thereof

A technology of scintillation crystals and ytterbium ions, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problem of low luminescence yield and achieve the effect of good appearance, excellent optical and physical and chemical properties

Active Publication Date: 2016-10-26
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, its luminescence yield is low, only 1250Ph / MeV, which severely limits the application of Yb:YAG as an inorganic ultrafast scintillation crystal with superior performance.

Method used

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  • Silicon-ytterbium-ion-codoped YAG superfast scintillating crystal and preparation method thereof
  • Silicon-ytterbium-ion-codoped YAG superfast scintillating crystal and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Example 1: Growth of Si by Czochralski Method 4+ Doping concentration is 0.01at%, Yb 3+ Si with a doping concentration of 5% 0.0005 :Yb 0.15 Y 2.85 Al 4.9995 O 12 Scintillation crystal

[0027] First, each high-purity oxide powder is properly pre-dried in the air to remove the adsorbed water, burned at 1000 ℃ for 10 hours, and then the SiO 2 : ≥99.99%, Yb 2 O 3 : ≥99.999%, Y 2 O 3 : ≥99.999%, Al 2 O 3 : ≥99.999% of raw materials are weighed and mixed according to the molar ratio. The raw materials are fully mixed and uniformly pressed into a block with an isostatic press, and then put into an alumina crucible, put in a muffle furnace for sintering, and the temperature is raised to 1300℃ in 10 hours, and the temperature is reduced to room temperature in 10 hours after 10 hours. , Take out the block and put it into the iridium crucible; use the pulling method to grow Si 0.0005 :Yb 0.15 Y 2.85 Al 4.9995 O 12 Ultra-fast scintillation crystal: use zirconia and alumina as insulat...

Embodiment 2

[0028] Example 2: Growth of Si by Czochralski Method 4+ Doping concentration is 0.05at%, Yb 3+ 15% Si doping concentration 0.0025 :Yb 0.45 Y 2.55 Al 4.9975 O 12 Scintillation crystal

[0029] First, each high-purity oxide powder is properly pre-dried in the air to remove the adsorbed water, burned at 1000 ℃ for 10 hours, and then the SiO 2 : ≥99.99%, Yb 2 O 3 : ≥99.999%, Y 2 O 3 : ≥99.999%, Al 2 O 3 : ≥99.999% of the raw materials are weighed and mixed according to the molar ratio. After the raw materials are mixed uniformly, they are pressed into a block with an isostatic press, and then put into an alumina crucible, put into a muffle furnace for sintering, and the temperature is raised to 1300℃ in 10 hours, and the temperature is reduced to room temperature in 10 hours after 10 hours. , Take out the block and put it into the iridium crucible; use the pulling method to grow Si 0.0025 :Yb 0.45 Y 2.55 Al 4.9975 O 12 Ultra-fast scintillation crystal: use zirconia and alumina as insu...

Embodiment 3

[0030] Example 3: Growth of Si by Czochralski Method 4+ Doping concentration is 1at%, Yb 3+ Si with a doping concentration of 30% 0.05 :Yb 0.9 Y 2.1 Al 4.95 O 12 Scintillation crystal

[0031] First, each high-purity oxide powder is properly pre-dried in the air to remove the adsorbed water, burned at 1000 ℃ for 10h, and then the SiO 2 : ≥99.99%, Yb 2 O 3 : ≥99.999%, Y 2 O 3 : ≥99.999%, Al 2 O 3 : ≥99.999% of raw materials are weighed and mixed according to the molar ratio. After the raw materials are mixed uniformly, they are pressed into a block with an isostatic press, and then put into an alumina crucible, put into a muffle furnace for sintering, and the temperature is raised to 1300℃ in 10 hours, and the temperature is reduced to room temperature in 10 hours after 10 hours. , Take out the block and put it into the iridium crucible; use the pulling method to grow Si 0.05 :Yb 0.9 Y 2.1 Al 4.95 O 12 Ultra-fast scintillation crystal: use zirconia and alumina as insulation materia...

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Abstract

The invention relates to a silicon-ytterbium-ion-codoped YAG superfast scintillating crystal and a preparation method thereof. The chemical formula of the silicon-ytterbium-ion-codoped YAG crystal is Yb3xY3(1-x)Si5yAl5(1-y)O12, wherein x=0.05-0.3, y=0.0001-0.01, x is the doping amount of matrix Yb ions, y is the doping amount of Si ions, the Yb ions enter the crystal to replace Y ion sites, and the Si ions replace Al ion sites. The Yb3xY3(1-x)Si5yAl5(1-y)O12 superfast scintillating crystal prepared by the method is high in light yield, high in irradiation damage resistance, applicable to fields such as superfast pulse radiation detection, inertia confined fusion, space radiation detection and nuclear reaction kinetics researches, and the like.

Description

Technical field [0001] The invention relates to a scintillation crystal, in particular to a YAG ultrafast scintillation crystal co-doped with silicon ytterbium ion and a preparation method thereof. Background technique [0002] Inorganic scintillation crystals are crystalline energy converters that can convert the energy of high-energy photons (X / γ rays) or particles (protons, neutrons, etc.) into easily detectable ultraviolet / visible photons. Detectors made of scintillation crystals are widely used in high-energy physics, nuclear physics detection and imaging, imaging nuclear medicine diagnosis (XCT, PET), geological prospecting, astrospace physics, and security inspections. With the rapid development of nuclear detection and related technologies, the application fields of scintillation crystals continue to expand. Different application fields have put forward higher requirements on scintillation crystals. Traditional scintillation crystals such as NaI(Tl), BGO, PWO, etc. can n...

Claims

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Application Information

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IPC IPC(8): C30B29/22C30B15/00C30B11/00
CPCC30B11/00C30B15/00C30B29/22
Inventor 陈建玉侯晴齐红基韩和同宋朝辉张侃
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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