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Preparation method of black silicon

A technology of black silicon and silicon wafers, applied in the field of black silicon preparation, can solve the problems that the improvement of photoelectric conversion efficiency cannot achieve the expected effect, the low reflectivity, and the advantages cannot be reflected.

Active Publication Date: 2016-10-26
CSG PVTECH +1
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Problems solved by technology

[0004] However, the biggest defect of this technology is that a large number of defects on the surface of black silicon trap most of the carriers generated near the surface, so that these photogenerated carriers are not collected by the electrodes, which reduces the open circuit voltage, which is generally higher than that of conventional cells. The open circuit voltage is reduced by more than 2mV, and the photoelectric conversion efficiency cannot reach the expected effect, so that the advantage of low reflectivity cannot be reflected

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  • Preparation method of black silicon
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preparation example Construction

[0030] Such as figure 1 The preparation method of the black silicon of one embodiment shown, comprises the following steps:

[0031] S10, providing a silicon wafer to be processed, and performing acid texturing on the surface of the silicon wafer.

[0032] The operation of acid texturing on the surface of silicon wafers is: using HF / HNO 3 Conventional acid texturing is performed on the surface of the silicon wafer to form a wormhole-like structure.

[0033] The silicon wafers to be processed can be single crystal silicon wafers or polycrystalline silicon wafers.

[0034] Preferably, the silicon wafers to be processed are polycrystalline silicon wafers.

[0035] S20, forming a nano-micro composite structure on the surface of the silicon wafer obtained in S10.

[0036] The operation of forming the nano-micro composite structure on the surface of the silicon wafer is: forming the nano-micro composite structure on the surface of the silicon wafer by reactive ion etching.

[0...

Embodiment 1

[0051] Provide polysilicon wafers to be processed, using HF / HNO 3 Perform conventional acid texturing on the surface of polycrystalline silicon wafers;

[0052] Use Bitai Technology's RIE equipment to form a nano-micro composite structure on the surface of polycrystalline silicon wafers;

[0053] Using BOE reagent (NH 4 F / HF=6:1) Clean the surface of the polysilicon wafer for the first time;

[0054]Use phosphorus oxychloride liquid source to diffuse a layer of phosphorus atoms on the surface of silicon wafer at high temperature. Due to the formation of nano-micro composite structure, the diffusion treatment needs to adopt a range value higher than that of conventional processes, about 95Ω~100Ω;

[0055] The second cleaning of polysilicon wafers: use HF to remove silicon phosphosilicate glass, HF / HNO 3 to etch;

[0056] Perform thermal oxygen oxidation treatment on polycrystalline silicon wafers to obtain black silicon. The specific process steps of the thermal oxygen oxi...

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Abstract

The invention discloses a preparation method of black silicon. The method comprises the following steps that 1) a silicon chip to be processed is provided, and acid texturing is carried out on the surface of the silicon chip; 2) a nano-micro composite structure is formed in the surface of the silicon chip obtained in the step 1); 3) primary cleaning is carried out on the silicon chip obtained in the step 2); 4) diffusion is carried out on the silicon chip obtained in the step 3); 5) secondary cleaning is carried out on the silicon chip obtained in the step 4); and 6) thermal oxidation is carried out on the silicon chip obtained in the step 5), so that a compact silicon dioxide layer is formed at the surface of the silicon chip, and the black silicon is obtained. According to the method, thermal oxidation is carried out on the silicon chip after secondary cleaning, so that the compact silicon dioxide layer is formed at the surface of the silicon chip, surface defects of the silicon chip are overcome, and the open-circuit voltage of the prepared black silicon is improved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for preparing black silicon. Background technique [0002] At present, the utilization of renewable and clean energy is an urgent strategic issue facing all countries. Therefore, the effective use of renewable energy such as solar energy, wind energy, water energy, etc. has become the focus of people's research. Compared with oil and coal, which only exist in a few places on the earth, solar energy does not exist in the so-called solar energy-deficient areas, which makes people hopeful for the research of solar cells. [0003] The efficiency of crystalline silicon cells has always been the focus of enterprises. How to use new technology to improve the efficiency of crystalline silicon cells is a major issue facing the photovoltaic industry. At the same time, the development of new high-efficiency batteries is motivating researchers. As a new type of black silicon technology...

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Application Information

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IPC IPC(8): H01L31/18H01L31/0236H01L31/0216
CPCH01L31/02167H01L31/02168H01L31/02363H01L31/1804Y02P70/50
Inventor 马金金梁杭伟李家兰肖川叶雄新彭华
Owner CSG PVTECH